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A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS RDS(on) ID TA = 25C 1.9A Features and Benefits * * * Low on-resistance Fast switching speed Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 Mechanical Data * Case: SOT23-6 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (approximate) Description and Applications This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, this makes it ideal for high efficiency power management applications. * * * * * * * * * DC-DC Converters Power management functions Disconnect Switches Motor control SOT23-6 D D D G D D S Package Pin Out G S Equivalent Circuit TOP VIEW Ordering Information Product ZXMN10A08E6TA ZXMN10A08E6TC Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 Marking Information 10A8 10A8 = Product Type Marking Code ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 1 of 8 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Maximum Ratings Drain-Source voltage Gate-Source voltage Continuous Drain current @TA = 25C unless otherwise specified Symbol VDSS VGS ID IDM IS ISM Value 100 20 1.9 1.5 1.5 8.6 2.5 8.6 Unit V V A A A A Characteristic (Note 2) VGS = 10V TA = 70C (Note 2) (Note 1) Pulsed Drain current (Note 3) Continuous Source current (Body diode) (Note 2) Pulsed Source current (Body diode) (Note 3) Thermal Characteristics Characteristic Power dissipation Linear derating factor Power dissipation Linear derating factor Thermal Resistance, Junction to ambient Operating and storage temperature range Notes: Symbol (Note 1) PD (Note 2) (Note 1) (Note 2) RJA TJ, TSTG Value 1.1 8.8 1.7 13.6 113 73 -55 to 150 Unit W mW/C W mW/C C/W C 1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 2. For a device surface mounted on FR4 PCB measured at t 5 sec. 3. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse current 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 2 of 8 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Thermal Characteristics 10 RDS(on) 1.2 Max Power Dissipation (W) IC Drain Current (A) Limited 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 1 DC 1s 100ms 10ms 1ms 100s 100m 10m Single Pulse Tamb=25C 100m 1 10 100 VDS Drain-Source Voltage (V) Temperature (C) Safe Operating Area 120 Derating Curve Thermal Resistance (C/W) 80 60 40 D=0.2 Single Pulse D=0.05 D=0.1 D=0.5 Maximum Power (W) 100 Tamb=25C 100 Single Pulse T amb=25C 10 20 100 1m 10m 100m 1 1 100 1m 10m 100m 1 10 100 1k 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 3 of 8 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Electrical Characteristics Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage @TA = 25C unless otherwise specified Symbol V(BR)DSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf Min 100 2 Typ 5.0 0.87 27 32 405 28.2 14.2 4.2 7.7 1.8 2.1 3.4 2.2 8 3.2 Max 0.5 100 4 0.25 0.30 0.95 Unit V A nA V S V ns nC pF pF pF nC nC nC nC ns ns ns ns VDD = 30V, VGS = 10V ID = 1.2A, RG 6.0 VDS = 50V, VGS = 10V ID = 1.2A VDS = 50V, VGS = 5V ID = 1.2A VDS = 50V, VGS = 0V f = 1MHz Test Condition ID = 250A, VGS = 0V VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V ID = 250A, VDS = VGS VGS = 10V, ID = 3.2A VGS = 6V, ID = 2.6A VDS = 15V, ID = 3.2A IS = 3.2A, VGS = 0V IF = 1.2A, di/dt = 100A/s Static Drain-Source On-Resistance (Note 4) Forward Transconductance (Notes 4 & 6) Diode Forward Voltage (Note 4) Reverse recovery time (Note 6) Reverse recovery charge (Note 6) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time (Note 5) Turn-On Rise Time (Note 5) Turn-Off Delay Time (Note 5) Turn-Off Fall Time (Note 5) Notes: 4. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 5. Switching characteristics are independent of operating junction temperatures. 6. For design aid only, not subject to production testing. ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 4 of 8 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Typical Characteristics 10 T = 25C 10V 10 T = 150C 10V 5V 4.5V 4V 3.5V ID Drain Current (A) 5V 1 4.5V 4V ID Drain Current (A) 1 0.1 VGS 3.5V 0.1 3V VGS 0.01 0.1 1 10 0.01 0.1 1 10 VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V) Output Characteristics 2.0 Normalised RDS(on) and VGS(th) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 Output Characteristics VGS = 10V ID = 3.2A RDS(on) VDS = 10V ID Drain Current (A) 1 T = 150C T = 25C VGS(th) VGS = VDS ID = 250uA 0.1 T = -55C 3 4 5 0 50 100 150 VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 100 VGS 4V 4.5V T = 25C Normalised Curves v Temperature 10 ISD Reverse Drain Current (A) 3.5V T = 150C 10 5V 1 T = 25C 1 10V 0.1 0.1 0.01 0.01 0.1 1 10 0.4 0.6 0.8 1.0 On-Resistance v Drain Current ID Drain Current (A) VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 5 of 8 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Typical Characteristics - continued 600 10 f = 1MHz C Capacitance (pF) 500 400 CISS VGS Gate-Source Voltage (V) VGS = 0V ID = 1.2A 8 6 4 2 VDS = 50V 300 200 100 0 0.1 1 COSS CRSS 10 100 0 0 1 2 3 4 5 6 7 8 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits QG 12V Current regulator 50k Same as D.U.T VG Q GS Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% V GS RG 10% V GS td(on) t(on) tr td(off) t(on) tr RD V DS VDD Switching time waveforms ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 Switching time test circuit 6 of 8 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Package Outline Dimensions DIM A A1 A2 b C D E E1 L e e1 L Millimeters Min. 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF 0 Inches Max. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60 Min. 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF 0 Max. 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002 10 10 Suggested Pad Layout 0.95 0.037 1.06 0.042 2.2 0.087 0.65 0.026 mm inches ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 7 of 8 www.diodes.com October 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 8 of 8 www.diodes.com October 2009 (c) Diodes Incorporated |
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