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Datasheet File OCR Text: |
Semiconductor STC3265 NPN Silicon Transistor Description * Audio power amplifier application Features * High hFE : hFE=100~320 * Complementary pair with STA1298 Ordering Information Type NO. STC3265 Marking FA : hFE rank Package Code SOT-23 Outline Dimensions 2.40.1 1.300.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.90.1 1.12 Max. 0~0.1 KST-2016-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 -0.03 +0.05 1 STC3265 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 30 5 800 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob Test Condition IC=100A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 35 30 5 100 120 13 0.1 0.1 320 0.5 - Unit V V V A A V MHz pF * : hFE rank / O : 100 ~ 200, Y : 160 ~ 320 KST-2016-000 2 STC3265 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(sat) - IC Fig. 5 hFE - IC KST-2016-000 3 |
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