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POWER MANAGEMENT EL Lamp Drivers: Die Specifications
IMP525
Single Cell Battery Powered Electroluminescent Lamp Driver/Inverter
IMP560 IMP803
Power Efficient EL Lamp Driver
High-Voltage EL Lamp Driver
408-432-9100/www.impweb.com
Die Specif ication
IMP525 High-Voltage EL Lamp Driver
General Information
Die Thickness: Bond Wire Size: Back Side Metal: Back Side Potential: Die Attach Method: Bond Pad Metal: Bond Pad Size: Die Size: 25 mils (625 microns) 1.0 mil (25 microns) None Ground Conductive Adhesive Aluminum, 1% Silicon, 1/2% Copper 100 microns per side 1.35mm x 1.54mm
RSW-OSC 2 9 1 8 DIS VDD REL-OSC 1.54mm GND 5
Pad Description
Pad Number Name Function
1 2 3 4 5 6 7 8 9 VDD CS LX GND VB VA DIS
Positive voltage supply. Boost converter storage capacitor pad. Inductor pad. Ground pad. EL lamp drive. EL lamp drive.
RSW-OSC Switch-mode oscillator frequency setting pad.
REL-OSC EL lamp oscillator frequency setting pad. Disable pad. DIS = HIGH disables chip.
LX CS 4 3
IMP525
Pad Location1
Pad Number
1
X (microns)
1153 476 314 143 111 397 1104 1153 1153
Y (microns)
1092 1226 1226 1216 460 112 112 958 1226
6 VB (0, 0) 1.35mm
7 VA
2 3 4 5 6 7 8 9
Notes 1. To bonding pad center
2
Die Specif ication
IMP560 High-Voltage EL Lamp Driver
General Information
Die Thickness: Bond Wire Size: Back Side Metal: Back Side Potential: Die Attach Method: Bond Pad Metal: Bond Pad Size: Die Size: 25 mils (625 microns) 1.0 mil (25 microns) None Ground Conductive Adhesive Aluminum, 1% Silicon, 1/2% Copper 100 microns per side 1.38mm x 1.82mm
DIS VDD 1 RSW-OSC 2 10 8 REL-OSC 7 VA
Pad Description
Pad Number Name Function
1 2 3 4 5 6 7 8 9 10 VDD CS LX GND VB VA REL-OSC GND DIS
Positive voltage supply. Boost converter storage capacitor pad. Inductor pad.
RSW-OSC Switch-mode oscillator frequency setting pad.
Ground pad. EL lamp drive. EL lamp drive. EL lamp oscillator frequency setting pad. Ground pin. Disable pad. DIS = HIGH disables chip.
Pad Location1
1.82mm
IMP560
Pad Number
1 2 3 4 5 6 7 8 9 10
X (microns)
152 152 152 152 1198.5 1215 1215 1234 998 382
Y (microns)
1480 1253.5 387.75 122.5 140 395 1208.5 1508.5 122.5 1553.5
CS 3 LX 4 (0, 0) 1.38mm 9 GND
6 5
VB GND
Notes 1. To bonding pad center
3
Die Specif ication
IMP803 High-Voltage EL Lamp Driver
General Information
Die Thickness: Bond Wire Size: Back Side Metal: Back Side Potential: Die Attach Method: Bond Pad Metal: Bond Pad Size: Die Size: 25 mils (625 microns) 1.0 mil (25 microns) None Ground Conductive Adhesive Aluminum, 1% Silicon, 1/2% Copper 100 microns per side 1.38mm x 1.82mm
DIS VDD 1 RSW-OSC 2 10 8 REL-OSC 7 VA
Pad Description
Pad Number Name Function
1 2 3 4 5 6 7 8 9 10 VDD CS LX GND VB VA REL-OSC GND DIS
Positive voltage supply. Boost converter storage capacitor pad. Inductor pad.
RSW-OSC Switch-mode oscillator frequency setting pad.
Ground pad. EL lamp drive. EL lamp drive. EL lamp oscillator frequency setting pad. Ground pin. Disable pad. DIS = HIGH disables chip.
Pad Location1
1.82mm
IMP803
Pad Number
1 2 3 4 5 6 7 8 9 10
X (microns)
152 152 152 152 1198.5 1215 1215 1234 998 382
Y (microns)
1480 1253.5 387.75 122.5 140 395 1208.5 1508.5 122.5 1553.5
CS 3 LX 4 (0, 0) 1.38mm 9 GND
6 5
VB GND
Notes 1. To bonding pad center
IMP, Inc. Corporate Headquarters 2830 N. First Street San Jose, CA 95134-2071 Tel: 408-432-9100 Tel: 800-438-3722 Fax: 408-434-0335 Fax-on-Demand: 1-800-249-1614 (USA) Fax-on-Demand: 1-303-575-6156 (International) e-mail: info@impinc.com http://www.impweb.com
The IMP logo is a registered trademark of IMP, Inc. All other company and product names are trademarks of their respective owners. (c) 1998 IMP, Inc. Printed in USA Part No.: IMP525, 560, 803 Document Number: ELDCE-2-9/98

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