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April 1998
FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 V RDS(ON) = 0.010 @ VGS=5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage
T C = 25C unless otherwise noted
FDP7030L 30 20
(Note 1)
FDB7030L
Units V V A
Gate-Source Voltage - Continuous Drain Current - Continuous
100 75
- Pulsed PD Total Power Dissipation @ TC = 25C Derate above 25C TJ,TSTG TL
(Note 1)
300 125 0.83 -65 to 175 275 W W/C C C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
THERMAL CHARACTERISTICS RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.2 62.5 C/W C/W
(c) 1998 Fairchild Semiconductor Corporation
FDP7030L Rev.D1
Electrical Characteristics (TC = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 38 A 200 38 mJ A
OFF CHARACTERISTICS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ =125 C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 2)
o
30 36 10 1 100 -100
V mV/oC A mA nA nA
BVDSS/TJ Breakdown Voltage Temp. Coefficient
IDSS Zero Gate Voltage Drain Current
VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 C VGS = 10 V, ID = 50 A TJ = 125C VGS = 5 V, ID = 40 A
o
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance
1
1.5 -5 0.006 0.009 0.009
2
V mV/oC
VGS(th)/TJ
RDS(ON)
0.007 0.011 0.01
ID(on) gFS
On-State Drain Current Forward Transconductance
VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 50 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
60 50
A S
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
2150 1290 420
pF pF pF
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 75 A, VGS = 10 V, RGEN = 6 RGS = 10
10 160 70 140
20 225 95 195 50
nS nS nS nS nC nC nC
VDS = 12 V ID = 50 A, VGS= 4.5 V
35 12 18
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
(Note 1) (Note 2) (Note 2)
100 300 1 0.85 1.3 1.1
A A V
VGS = 0 V, IS = 50 A
TJ = 125C
Notes 1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
FDP7030L Rev.D1
Typical Electrical Characteristics
100 I D , DRAIN-SOURCE CURRENT (A)
3 DRAIN-SOURCE ON-RESISTANCE
4.0
60
R DS(ON) , NORMALIZED
V GS = 10V 8.0 80 6.0
5.0 4.5
V GS =3.5V
2.5
4.0
2
4.5
1.5
40
3.5
5.0 6.0 8.0
20
3.0
0 0 0.5 V
DS
1
10.0
1
1.5
2
2.5
0.5
, DRAIN-SOURCE VOLTAGE (V)
0
20
40
60
80
100
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025
1.6 DRAIN-SOURCE ON-RESISTANCE RDS(ON) , NORMALIZED
1.4
V GS = 10V
R DS(ON) , ON-RESISTANCE (OHM)
ID = 50A
ID =50A
0.02
1.2
0.015
25C
0.01
125C
1
0.8
0.005
0.6 -50
-25
0
25
50
75
100
125
150
175
0
2
TJ , JUNCTION TEMPERATURE (C)
4 6 8 V GS , GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
60
60
VDS = 10V
ID , DRAIN CURRENT (A) 50 40 30
I S , REVERSE DRAIN CURRENT (A)
10 1 0.1
VGS =0V TA = 125C 25C -55C
T = -55C A
20 10 0
25 125C
0.01 0.001 0.0001
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP7030L Rev.D1
Typical Electrical Characteristics (continued)
10 VGS , GATE-SOURCE VOLTAGE (V)
5000
I D = 50A
8
VDS = 6.0V 12V
CAPACITANCE (pF)
3000
24V
6
2000
Ciss Coss
1000
4
500
Crss f = 1 MHz VGS = 0V
2
0
0
20
40 Q g , GATE CHARGE (nC)
60
80
200
1
2
5
10
20
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
500 300 I D , DRAIN CURRENT (A) 100 50 20 10 5 2 1 0.1
R DS
N) (O
8000
it Lim
10 s 10 0 s
POWER (W)
1m s 10 ms 10 0 DC ms
6000
SINGLE PULSE R JC =1.2 C/W TC = 25C
4000
V GS = 10V SINGLE PULSE R JC= 1.2 o C/W T C = 25 C
0.5 1 5 10 30 50
2000
0 0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V))
SINGLE PULSE TIME (ms)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 0.1
0.05 P(pk) D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2 0.1
R JC (t) = r(t) * RJC R JC = 1.2 C/W
0.05 0.03 0.02
0.02 0.01 Single Pulse
t1
t2
TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000
0.01 0.01
0.05
Figure 11. Transient Thermal Response Curve.
FDP7030L Rev.D1

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