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APT19F100J
1000V, 19A, 0.46 Max, trr 270ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D
S
SO
2 T-
27
ISOTOP (R)
"UL Recognized"
file # E145592
APT19F100J
G
D
Single die FREDFET
S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 19 12 120 30 1875 16
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 10 1.1 0.15 150 Min Typ Max 460 0.27 Unit W C/W C V
9-2006 050-8080 Rev A
oz g in*lbf N*m
Torque
Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 16A VGS = VDS, ID = 2.5mA VDS = 1000V VGS = 0V TJ = 25C TJ = 125C
APT29F100B2_L
Typ 1.15 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1000
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.39 4 -10
0.46 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 16A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 34 8500 115 715 290
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 667V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 16A, VDS = 500V Resistive Switching VDD = 667V, ID = 16A RG = 2.2 6 , VGG = 15V
150 260 46 125 39 35 130 33 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 100
Unit A
G S
TJ = 25C TJ = 125C
120 230 500 13 35 11 15 1.1 270 640 V ns C A 25 V/ns
ISD = 16A, TJ = 25C, VGS = 0V
ISD = 16A 3 diSD/dt = 100A/s
TJ = 25C TJ = 125C TJ = 25C TJ = 125C
ISD 16A, di/dt 1000A/s, VDD = 667V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 14.65mH, RG = 2.2, IAS = 16A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 9-2006 050-8080 Rev A
80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0
V
GS
= 10V
30
TJ = -55C
APT19F100J
T = 125C
J
25 ID, DRIAN CURRENT (A)
V
GS
= 6, 7, 8 & 9V
20 15 10 5 0
5V
TJ = 25C
TJ = 125C
4.5V
TJ = 150C
30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 16A
0
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
120 100 ID, DRAIN CURRENT (A) 80 60 40
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C TJ = 25C
TJ = 125C
20 0
0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 45 40
0
8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
Ciss
20,000 10,000
gfs, TRANSCONDUCTANCE
35 30 25 20 15 10 5 0 0
TJ = 25C TJ = 125C
C, CAPACITANCE (pF)
TJ = -55C
1000
100
Coss
Crss
16 12 8 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 4
ID = 16A
20
1000 800 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 120 ISD, REVERSE DRAIN CURRENT (A) 100 80 60
TJ = 25C
10
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
VDS = 200V
VDS = 500V
TJ = 150C
20 0
050-8080
50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0
0
1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0
Rev A
9-2006
VDS = 800V
40
200 100
I
200 100 ID, DRAIN CURRENT (A)
DM
APT19F100J
ID, DRAIN CURRENT (A)
IDM
10
13s
100s
10
13s 100s Rds(on) 1ms
10ms
1
1ms
Rds(on)
10ms
100ms
1
TJ = 150C TC = 25C
0.1
TJ = 125C TC = 75C
DC line
1
1200 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25C)*(TJ - TC)/125 DC line C
1200 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1
TJ (C)
0.0140 Dissipated Power (Watts) 0.0108 0.0266 0.375 0.0496
TC (C)
0.0571 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 11, Transient Thermal Impedance Model 0.14 ZJC, THERMAL IMPEDANCE (C/W) 0.12
D = 0.9
0.10
0.7
0.08 0.06 0.04 0.02 0
0.5 0.3 SINGLE PULSE 0.1 0.05
Note:
ZEXT
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-5
10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4
1.0
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
9-2006
14.9 (.587) 15.1 (.594)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev A
* Source Dimensions in Millimeters and (Inches)
Gate
050-8080
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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