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| Hyper Mini SIDELED(R) Hyper-Bright LED LB C873, LV C873, LT C873 Vorlaufige Daten / Preliminary Data Besondere Merkmale * Gehausetyp: weies SMT Gehause * Besonderheit des Bauteils: kleine Bauform mit extrem breiter Abstrahlcharakteristik; ideal fur Einkopplungen in Lichtleiter * Wellenlange: 470 nm (blau), 505 nm (verde), 528 nm (true green) * Abstrahlwinkel: Lambertscher Strahler (120) * Technologie: InGaN * optischer Wirkungsgrad: 2 lm/W (blau), 6 lm/W (verde), 8 lm/W (true green) * Gruppierungsparameter: Lichtstarke * Verarbeitungsmethode: fur alle SMT-Bestucktechniken geeignet * Lotmethode: IR Reflow Loten * Vorbehandlung: nach JEDEC Level 2 * Gurtung: 8 mm Gurt mit 2000/Rolle, o180 mm oder 8000/Rolle, o330 mm * ESD-Festigkeit: ESD-sicher bis 2 kV nach MIL STD 883 D, Method 3015.7 Anwendungen * Signalindikatoren * Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays, Werbebeleuchtung, Allgemeinbeleuchtung) * Einkopplung in Lichtleiter Features * package: white SMT package * feature of the device: small package with extremely wide viewing angle; ideal for coupling in light guides * wavelength: 470 nm (blue), 505 nm (verde), 528 nm (true green) * viewing angle: Lambertian Emitter (120) * technology: InGaN * optical efficiency: 2 lm/W (blue), 6 lm/W (verde), 8 lm/W (true green) * grouping parameter: luminous intensity * assembly methods: suitable for all SMT assembly methods * soldering methods: IR reflow soldering * preconditioning: acc. to JEDEC Level 2 * taping: 8 mm tape with 2000/reel, o180 mm or 8000/reel, o330 mm * ESD-withstand voltage: up to 2 kV acc. to MIL STD 883 D, Method 3015.7 Applications * signaling applications * backlighting (LCD, cellular phones, switches, keys, displays, illuminated advertising, general lighting) * coupling into light guides 2000-03-01 1 OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Typ Emissionsfarbe Color of Emission Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Lichtstrom Bestellnummer Type Luminous Intensity IF = 20 mA IV (mcd) 11.2 ... 18.0 ... 11.2 ... 14.0 ... 18.0 ... 22.4 ... 28.0 ... 28.0 ... 45.0 ... 28.0 ... 35.5 ... 45.0 ... 56.0 ... 71.0 ... 22.4 35.5 14.0 18.0 22.4 28.0 35.5 56.0 90.0 35.5 45.0 56.0 71.0 90.0 Luminous Flux IF = 20 mA V (mlm) 50.4 (typ.) 80.3 (typ.) 37.8 (typ.) 48.0 (typ.) 60.6 (typ.) 75.6 (typ.) 95.3 (typ.) 126.0 (typ.) 202.5 (typ.) 95.3 (typ.) 120.8 (typ.) 151.5 (typ.) 190.5 (typ.) 241.5 (typ.) 159.8 (typ.) 252.0 (typ.) 120.8 (typ.) 151.5 (typ.) 190.5 (typ.) 241.5 (typ.) 303.0 (typ.) Ordering Code LB C873-L1M1-1 LB C873-M1N1-1 LB C873-L1 LB C873-L2 LB C873-M1 LB C873-M2 LB C873-N1 LV C873-N1P1-1 LV C873-P1Q1-1 LV C873-N1 LV C873-N2 LV C873-P1 LV C873-P2 LV C873-Q1 LT C873-N2P2-1 LT C873-P2Q2-1 LT C873-N2 LT C873-P1 LT C873-P2 LT C873-Q1 LT C873-Q2 blue on request on request verde colorless clear on request on request true green colorless clear 35.5 ... 71.0 56.0 ... 112.0 35.5 ... 45.0 45.0 ... 56.0 56.0 ... 71.0 71.0 ... 90.0 90.0 ... 112.0 on request on request Helligkeitswerte werden mit einer Stromeinpragedauer von 25 ms und einer Genauigkeit von 11 % ermittelt. Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. -1 Farbselektiert nach Wellenlangengruppen (siehe Seite 4). -1 Color selection acc. to Wavelength groups (see page 4). 2000-03-01 2 OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Leistungsaufnahme Power dissipation TA 25 C Symbol Symbol Wert Value - 40 ... + 100 - 40 ... + 100 + 125 20 t.b.d. Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 5 85 V mW Warmewiderstand Thermal resistance Rth JA Sperrschicht/Umgebung Junction/ambient Rth JS Sperrschicht/Lotpad Junction/solder point Montage auf PC-Board FR 4 (Padgroe 16 mm 2) mounted on PC board FR 4 (pad size 16 mm 2) 530 250 K/W K/W 2000-03-01 3 OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange1) Dominant wavelength1) IF = 20 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 20 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 5 V Temperaturkoeffizient von peak Temperature coefficient of peak IF = 20 mA Temperaturkoeffizient von dom Temperature coefficient of dom IF = 20 mA Temperaturkoeffizient von VF Temperature coefficient of VF IF = 20 mA Optischer Wirkungsgrad Optical efficiency IF = 20 mA 1) Symbol Symbol LB (typ.) Werte Values LV 503 LT 523 465 Einheit Unit nm peak dom (typ.) 470 7 25 505 8 30 528 10 33 nm (typ.) nm (typ.) (typ.) (max.) (typ.) (max.) (typ.) 2 120 3.5 4.2 0.01 10 0.04 120 3.3 4.2 0.01 10 0.03 120 3.3 4.2 0.01 10 0.04 Grad deg. V V VF VF IR IR TCpeak TCdom TCV opt A A nm/K (typ.) 0.02 0.02 0.03 nm/K (typ.) - 2.9 - 3.2 - 3.6 mV/K (typ.) 2 6 8 lm/W Wellenlangengruppen / Wavelength groups blue min. 464 468 472 verde true green max. 525 531 537 4 Gruppe Group 3 4 5 2000-03-01 max. min. 468 472 476 498 503 507 max. min. 503 507 512 519 525 531 Wellenlangengruppen werden mit einer Stromeinpragedauer von 25 ms und einer Genauigkeit von 1 nm ermittelt. Wavelength groups are tested at a current pulse duration of 25 ms and an accuracy of 1 nm. OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative Spectral Emission V() = spektrale Augenempfindlichkeit Standard eye response curve 100 OHL00492 I rel % 80 V 60 blue verde true green 40 20 0 400 450 500 550 600 650 nm 700 Abstrahlcharakteristik Irel = f () Radiation Characteristic 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 2000-03-01 0 0.8 0.6 0.4 0 5 20 40 60 80 100 120 OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Durchlastrom IF = f (VF) Forward Current TA = 25 C 10 2 mA IF 5 OHL00495 Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative Luminous Intensity TA = 25 C 10 1 OHL00494 IV I V (20 mA) 10 1 5 blue verde, true green 10 0 5 10 0 5 10 -1 5 10 -1 2 2.5 3 3.5 4 4.5 V 5 10 -2 10 -1 10 0 10 1 mA 10 2 VF Maximal zulassiger Durchlastrom IF = f (T) Max. Permissible Forward Current 30 mA 25 verde, true green blue 15 15 blue verde, true green OHL01146 IF Maximal zulassiger Durchlastrom IF = f (T) Max. Permissible Forward Current 30 OHL01147 IF Estimated average degradation I V = -50% I F mA 25 Estimated average degradation I V = -50% 20 20 10 10 5 5 TA temp. ambient 0 0 20 40 60 80 C 100 0 0 TS temp. solder point 20 40 60 80 C 100 T T 2000-03-01 6 OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Relative Lichtstarke IV/IV(25 C) = f (TA) Relative Luminous Intensity IF = 20 mA 1.2 OHL00870 Dominante Wellenlange dom = f (IF) Dominant Wavelength LV, TA = 25 C 511 nm dom 510 509 OHL00503 IV I V (25 C) 0.8 508 507 0.6 506 0.4 505 504 0.2 503 0 -10 10 30 50 70 C 100 502 0 10 verde 20 30 40 mA 50 TA Dominante Wellenlange dom = f (IF) Dominant Wavelength LB, TA = 25 C 472.5 dom nm OHL00500 IF Dominante Wellenlange dom = f (IF) Dominant Wavelength LT, TA = 25 C 541 nm dom 539 537 OHL00882 471.5 471.0 470.5 blue 470.0 469.5 535 533 531 true green 529 527 525 523 469.0 0 10 20 30 40 mA 50 521 0 10 20 30 40 mA 50 IF 2000-03-01 7 IF OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Mazeichnung Package Outlines 1.6 (0.063) 1.2 (0.047) 1.2 (0.047) 0.8 (0.031) 0.6 (0.024) Cathode 0.4 (0.016) 1.5 (0.059) (0.8 (0.031)) (0.6 (0.024)) 1.8 (0.071) 0...0.1 (0.004) 0.25 (0.010) GPLY6930 5.8 (0.228) 5.4 (0.213) 4.6 (0.181) 4.2 (0.165) Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Kathodenkennung: abgeschragte Ecke Cathode mark: bevelled edge 2000-03-01 8 0.20 (0.008) OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Lotbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lotprofil (nach IPC 9501) IR Reflow Soldering Profile (acc. to IPC 9501) 300 C OHLY0597 T 250 240-245 C 10-40 s 183 C 120 to 180 s Ramp-down rate up to 6 K/s Defined for Preconditioning: up to 6 K/s Ramp-up rate up to 6 K/s 200 150 100 50 Defined for Preconditioning: 2-3 K/s 0 0 50 100 150 200 s 250 t 2000-03-01 9 OPTO SEMICONDUCTORS LB C873, LV C873, LT C873 Empfohlenes Lotpaddesign Recommended Solder Pad IR Reflow Loten IR Reflow Soldering 6.6 1.2 1.2 6.6 Padgeometrie fur verbesserte Warmeableitung Paddesign for improved heat dissipation 1.2 Cu-Flache > 16 mm 2 Cu-area > 16 mm 2 Lotstopplack Solder resist OHLP0981 Verpackungseinheit 2000/Rolle, o180 mm oder 8000/Rolle, o330 mm Method of Taping / Polarity and Orientation Packing unit 2000/reel, o180 mm or 8000/reel, o330 mm Gurtung / Polaritat und Lage 4 2 1.75 1.5 1.2 C 5.5 6 12 A 4 1.8 OHA00226 2000-03-01 10 OPTO SEMICONDUCTORS |
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