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| FDMC510P P-Channel PowerTrench(R) MOSFET June 2010 FDMC510P P-Channel PowerTrench(R) MOSFET -20 V, -18 A, 8.0 m Features Max rDS(on) = 8.0 m at VGS = -4.5 V, ID = -12 A Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -10 A Max rDS(on) = 13 m at VGS = -1.8 V, ID = -9.3 A Max rDS(on) = 17 m at VGS = -1.5 V, ID = -8.3 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested Termination is Lead-free and RoHS Compliant HBM ESD capability level >2 KV typical (Note 4) General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process that has been optimized for rDS(ON), switching performance and ruggedness. Applications Battery Management Load Switch Top Pin 1 S S S G Bottom D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings -20 8 -18 -54 -12 -50 37 41 2.3 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 C/W Package Marking and Ordering Information Device Marking FDMC510P Device FDMC510P Package MLP 3.3X3.3 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com (c)2010 Fairchild Semiconductor Corporation FDMC510P Rev.C5 FDMC510P P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 A, VGS = 0 V ID = -250 A, referenced to 25 C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V -20 -12 -1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250 A ID = -250 A, referenced to 25 C VGS = -4.5 V, ID = -12 A VGS = -2.5 V, ID = -10 A rDS(on) Static Drain to Source On Resistance VGS = -1.8 V, ID = -9.3 A VGS = -1.5 V, ID = -8.3 A VGS = -4.5 V, ID = -12 A, TJ = 125 C gFS Forward Transconductance VDS = -5 V, ID = -12 A -0.4 -0.5 3 6.4 7.6 9.2 11 8.5 75 8.0 9.8 13 17 12 S m -1.0 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 5910 840 738 7860 1120 1110 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to -4.5 V VGS = 0 V to -2.5 V VDD = -10 V, ID = -12 A VDD = -10 V, ID = -12 A, VGS = -4.5 V, RGEN = 6 15 34 338 170 83 50 6.3 20.4 27 55 540 272 116 70 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -12 A VGS = 0 V, IS = -2 A IF = -12 A, di/dt = 100 A/s (Note 2) (Note 2) -0.70 -0.53 35 20 -1.3 -1.2 57 32 V ns nC Notes: 1: RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: Starting TJ = 25oC; P-Ch: L = 3 mH, IAS = -5 A, VDD = -20 V, VGS = -4.5 V. 4: No gate overvoltage rating is implied. FDMC510P Rev.C5 2 www.fairchildsemi.com FDMC510P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 50 VGS = - 1.5 V -ID, DRAIN CURRENT (A) 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 40 VGS = -4.5 V 4 VGS = -1.2 V 30 20 10 0 0.0 VGS = -2.5 V VGS = -1.8 V 3 VGS = -1.5 V 2 1 VGS = -2.5 V VGS = -1.8 V VGS = -1.2 V PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX VGS = -4.5 V 0 0 10 20 30 40 50 -ID, DRAIN CURRENT (A) 0.5 1.0 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 25 SOURCE ON-RESISTANCE (m) 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 ID = -12 A VGS = -4.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 20 ID = -12 A rDS(on), DRAIN TO 15 TJ = 125 oC 10 5 0 1.0 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 50 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0 V -ID, DRAIN CURRENT (A) 40 VDS = -5 V 10 TJ = 150 oC 30 TJ = 150 oC 1 TJ = 25 oC 20 TJ = 25 oC 10 TJ = -55 oC 0.1 TJ = -55 oC 0 0.0 0.5 1.0 1.5 2.0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC510P Rev.C5 3 www.fairchildsemi.com FDMC510P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -12 A 20000 10000 CAPACITANCE (pF) Ciss 3.0 VDD = -8 V VDD = -12 V VDD = -10 V 1.5 1000 Coss f = 1 MHz VGS = 0 V Crss 0.0 0 20 40 60 80 100 Qg, GATE CHARGE (nC) 400 0.1 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 -ID, DRAIN CURRENT (A) 50 VGS = -4.5 V 20 -IAS, AVALANCHE CURRENT (A) 10 TJ = 25 oC TJ = 100 oC 40 VGS = -2.5 V 30 20 10 Limited by Package RJC = 3 C/W o TJ = 125 oC 1 0.1 1 10 100 1000 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 100 us -ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE RJA = 125oC/W 10 1 ms 10 ms 100 TA = 25oC 1 THIS AREA IS LIMITED BY rDS(on) 100 ms 1s 10 s DC 10 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC 1 0.5 -4 10 10 -3 0.01 0.01 0.1 1 10 80 10 -2 10 -1 1 10 100 1000 -VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC510P Rev.C5 4 www.fairchildsemi.com FDMC510P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RJA = 125 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -1 0.001 -4 10 10 -3 10 -2 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC510P Rev.C5 5 www.fairchildsemi.com FDMC510P P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout FDMC510P Rev.C5 6 www.fairchildsemi.com FDMC510P P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPMTM F-PFSTM AccuPowerTM (R)* PowerTrench(R) FRFET(R) Auto-SPMTM SM Global Power Resource PowerXSTM The Power Franchise(R) Build it NowTM (R) Green FPSTM Programmable Active DroopTM CorePLUSTM Green FPSTM e-SeriesTM QFET(R) CorePOWERTM GmaxTM QSTM CROSSVOLTTM TinyBoostTM GTOTM Quiet SeriesTM CTLTM TinyBuckTM IntelliMAXTM RapidConfigureTM Current Transfer LogicTM TinyCalcTM TM ISOPLANARTM DEUXPEED(R) TinyLogic(R) Dual CoolTM MegaBuckTM TINYOPTOTM (R) EcoSPARK Saving our world, 1mW/W/kW at a timeTM MICROCOUPLERTM TinyPowerTM EfficentMaxTM SignalWiseTM MicroFETTM TinyPWMTM SmartMaxTM ESBCTM MicroPakTM TinyWireTM SMART STARTTM MicroPak2TM (R) TriFault DetectTM SPM(R) MillerDriveTM TRUECURRENTTM* STEALTHTM MotionMaxTM Fairchild(R) SerDesTM SuperFETTM Motion-SPMTM Fairchild Semiconductor(R) SuperSOTTM-3 OptiHiTTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) FACT(R) UHC(R) OPTOPLANAR(R) SuperSOTTM-8 FAST(R) (R) Ultra FRFETTM SupreMOSTM FastvCoreTM UniFETTM SyncFETTM FETBenchTM VCXTM Sync-LockTM FlashWriter(R) * PDP SPMTM VisualMaxTM FPSTM XSTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMC510P Rev.C5 7 www.fairchildsemi.com |
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