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Datasheet File OCR Text: |
DC COMPONENTS CO., LTD. R MPSA92M DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -300 -300 -5 625 +150 -55 to +150 Unit V V V .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) www..com -800 mA 321 mW o o .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT 380s, Duty Cycle Min -300 -300 -5 80 80 40 50 2% Typ -0.15 - Max -5 -0.1 -0.7 -0.9 -1 - Unit V V V A A V V V V MHz Test Conditions IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCE=-300V, IB=0 VEB=-3V, IC=0 IC=-30mA, IB=-1mA IC=-100mA, IB=-10mA IC=-20mA, IB=-2mA IC=-100mA, IB=-10mA IC=-10mA, VCE=-10V IC=-100mA, VCE=-10V IC=-200mA, VCE=-10V IC=-10mA, VCE=-20V, f=100MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width |
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