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 VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
Features
* Maximum Rise/Fall Times of 38ps * High-Speed Operation (Up to 10.7Gb/s NRZ Data) * Differential Inputs
SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
* Single-Supply * CML-Compatible Data Inputs * On-Chip 50 Input Terminations * 50 Output Impedance
General Description
The VSC7991 is a single 7V supply, 10.7Gb/s Electroabsorption Modulator (EAM)/laser diode driver with direct access to the laser modulation FETs. Laser offset and modulation currents are set by external components allowing precision monitoring and setting of the voltage levels. Data inputs are differentially terminated to 50.
Applications
* SONET/SDH @ 2.488Gb/s, 9.952Gb/s, 10.7Gb/s
VSC7991 Block Diagram
60(1) 60(1) 50(1) DIN 50(1) NDOUT DOUT
300(1)
NDIN DCC Note: (1) On-die components. VIP IMOD
300(1)
IB IBN
IP
G52321-0, Rev 2.3 02/26/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 1
VITESSE
SEMICONDUCTOR CORPORATION
SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
Advance Product Information
VSC7991
AC Characteristics (Over recommended operating conditions)
Table 1: High Speed Inputs /Outputs
Symbol
IRL ORL
Parameter
Input Return Loss, 50 System Output Return Loss, 50 System
Min
Typ
-15 -12
Max
Units
dB dB
Conditions
50MHz to 10GHz 50MHz to 10GHz


Table 2: Laser Driver AC Electrical Specifications
Symbol
tR tF Jitter
Parameter
Output Rise and Fall Times Output Jitter Overshoot/Undershoot Duty-Cycle
Min
Typ
Max
38 15 +10 +25
Units
ps ps/p-p % %
Conditions
50 load, 20% to 80%, VMOD = 3V 50 Load, VMOD = 3V DCC in the range of VSS - 0.5V to VSS +2V

-10 -25

DC Characteristics (Over recommended operating conditions)
Table 3: Power Dissipation
Symbol
IVSS PD
Parameter
Power Supply Current (VSS) Total Power Dissipation
Min
Typ
300 2040
Max
330 2244
Units
mA mW
Conditions
VSS = -6.8, RL = 50 to GND, IMOD = 120mA, VBIAS = 0V VSS = -6.8, RL = 50 to GND IMOD = 120mA, VBIAS = 0V

Table 4: Laser Driver DC Electrical Specifications Symbol
VBIAS VMOD VOCM IB, IBN VIP VIH VIL VSW
(1)
Parameter
Programmable Output Offset Voltage Modulation Voltage Amplitude Output Voltage Compliance Laser Bias Control Voltage Laser Modulation Control Voltage Input High Voltage Input Low Voltage Input Voltage Swing Duty-Cycle Control
Min
-0.8 1.5
Typ
Max
0 3 0 VSS + 0.7 0 -0.60 1000 VSS+ 2V
Units
V V V V V mV V mVp-p
Conditions
-10 VSS -150 -1.00 450 VSS - 0.5V

4
DCC
NOTE: DIN and NDIN inputs need to be driven differentially. If single-ended drive is desired, it is necessary to add a DC bias to the unused pin.
Page 2
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52321-0, Rev 2.3 02/26/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
Absolute Maximum Ratings(1)
SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
Negative Power Supply Voltage (VSS).............................................................................................. VCC to -8.0V All Pins ................................................................................................................................................VSS to + .5V Supply Voltage (VSS) ......................................................................................................................................... 8V Supply Current (ISS) .................................................................................................................................... 500mA Input Voltage (VIN)........................................................................................................................................ -2.0V Output Voltage (VOUT)................................................................................................................................. -4.0V Modulation Control Voltage (VIP).........................................................................................................VSS - 0.5V Output Offset Control Voltage (IB, IBN) ..........................................................................................................11V Output Offset Control Current (IIB) .............................................................................................................. 50mA Maximum Junction Temperature Range ..................................................................................... -55C to +125C Storage Temperature Range: ....................................................................................................... -55C to +125C
Note: (1) CAUTION: Stresses listed under "Absolute Maximum Ratings" may be applied to devices one at a time without causing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (GND) .............................................................................................................................. 0V Negative Voltage Rail (VSS)........................................................................................................... -6.5V to -7.2V Operational Case Temperature (TC1) ...................................................................................................0C to 75C
G52321-0, Rev 2.3 02/26/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 3
Page 4
2354m (0.0927")
GND Pad 39 GND Pad 1 NDIN Pad 2 50m GND Pad 40 GND Pad 41 VSS Pad 42 VSS Pad 43 VSS Pad 44 VSS Pad 45 GND Pad 46 GND Pad 47 GND Pad 48
IB Pad 34
IB Pad 35
GND Pad 36
GND Pad 37
GND Pad 38
GND Pad 33
Bare Die Descriptions
DOUT Pad 32
(0.002")
GND Pad 3 GND Pad 4 GND Pad 5 GND Pad 6 GND Pad 7 DIN Pad 8 GND Pad 9 GND Pad 19 VIP Pad 18 VSS Pad 17 VSS Pad 16 VSS Pad 15 VSS Pad 14 DCC Pad 13 GND Pad 12 GND Pad 11 NC Pad 10
GND Pad 31
GND Pad 30
SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
1754m (0.0691")
GND Pad 29
VSC7991
GND Pad 28
GND Pad 27
Figure 1: Pad Assignments
NDOUT Pad 26
VITESSE
SEMICONDUCTOR CORPORATION
GND Pad 25
IBN Pad 24
IBN Pad 23
IP Pad 22
IP Pad 21
GND Pad 20
NOTE: All dimensions are in micrometers. The 48 pads specified in the pad coordinates were merged into 24 larger pads.
50m
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
(0.002")
Advance Product Information
Die Size: 2354m x 1754m (0.0927" x 0.0691") Die Thickness: 381m (0.015") Pad Pitch: 150m (0.0059") Pad Size: 116m x 116m (0.0046" x 0.0046") Pad Passivation Opening: 100m x 100m (0.0039" x 0.0039") Scribe Size: 50m (0.002")
VSC7991
G52321-0, Rev 2.3 02/26/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
Table 5: Pad Coordinates Pad Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
Signal Name
GND NDIN GND GND GND GND GND DIN GND NC GND GND VDCC VSS VSS VSS VSS VIP GND GND IP IP IBN IBN
Coordinates (m) X
2296 2296 2296 2296 2296 2296 2296 2296 2296 2296 2146 1996 1846 1696 1546 1396 1246 1027 808 658 508 358 208 58
Y
1546 1396 1246 1061.5 877 692.5 508 358 208 58 58 58 58 58 58 58 58 58 58 58 58 58 58 58
Pad Number
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
Signal Name
GND NDOUT GND GND GND GND GND DOUT GND IB IB GND GND GND GND GND GND VSS VSS VSS VSS GND GND GND
Coordinates (m) X
58 58 58 58 58 58 58 58 58 58 208 358 508 658 808 958 1108 1258 1408 1558 1708 1858 2008 2158
Y
208 358 508 692.5 877 1061.5 1246 1396 1546 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696
G52321-0, Rev 2.3 02/26/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 5
VITESSE
SEMICONDUCTOR CORPORATION
SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
Advance Product Information
VSC7991
Package Pin Descriptions
Figure 2: Pin Identification
GND
GND
GND
GND
32
31
30
29
28
27
26
GND GND NDIN GND GND DIN GND GND
1 2 3 4 5 6 7 8
25
GND
VSS
VSS
IB
24 23 22
GND GND DOUT GND GND NDOUT GND GND
VSC7991
Top View
21 20 19 18 17
9
10
11
12
13
14
15 IBN
GND
DCC
VSS
VSS
VIP
IP
Page 6
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
GND
16
G52321-0, Rev 2.3 02/26/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
Table 6: Pin Identifications
Pin #
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
Name
GND GND NDIN GND GND DIN GND GND GND DCC VSS VSS VIP IP IBN GND GND GND NDOUT GND GND DOUT GND GND GND IB GND GND VSS VSS GND GND
Type
Pwr Pwr In Pwr Pwr In Pwr Pwr Pwr In Pwr Pwr In In In Pwr Pwr Pwr Out Pwr Pwr Out Pwr Pwr Pwr In Pwr Pwr Pwr Pwr Pwr Pwr
Level
Pwr Pwr CML Pwr Pwr CML Pwr Pwr Pwr DC Pwr Pwr DC DC DC Pwr Pwr Pwr Pwr Pwr Pwr Pwr Pwr DC Pwr Pwr Pwr Pwr Pwr Pwr Positive Voltage Rail Positive Voltage Rail
Description
Complementary Data In Positive Voltage Rail Positive Voltage Rail Data In Positive Voltage Rail Positive Voltage Rail Positive Voltage Rail Duty-Cycle Control Voltage Negative Voltage Rail Negative Voltage Rail Modulation Control Voltage Modulation Current Monitor Data Offset Control Current (complementary) Positive Voltage Rail Positive Voltage Rail Positive Voltage Rail Laser Modulation Current Output (complementary) Positive Voltage Rail Positive Voltage Rail Laser Modulation Current Output Positive Voltage Rail Positive Voltage Rail Positive Voltage Rail Data Offset Control Current Positive Voltage Rail Positive Voltage Rail Negative Voltage Rail Negative Voltage Rail Positive Voltage Rail Positive Voltage Rail
NOTE: A voltage HIGH on the data input (pin 6) corresponds to a voltage HIGH on the data output (pin 22).
G52321-0, Rev 2.3 02/26/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 7
VITESSE
SEMICONDUCTOR CORPORATION
SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
Advance Product Information
VSC7991
Package Information
DIMS A A1 A2 D D1 E E1 L e b ddd CCC R1 R Shoulder TOL. REF 0.003 REF 0.010 0.005 0.010 0.005 0.005 REF TYP N/A N/A MAX 0.003 0.003 DIM 0.054 0.003 0.050 0.321 0.225 0.321 0.225 0.021 0.0256 0.011 0.004 0 - 10 0.004 0.005 0.005 0.020
All dimensions in inches.
Page 8
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52321-0, Rev 2.3 02/26/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
Ordering Information
SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
The order number for this product is formed by a combination of the device number, and package style.
VSC7991
Device Type VSC7991: SONET/SDH 10.7Gb/s Laser Diode Driver
xx
Package Style CD: Metal Glass with Metal Lid--Formed Leads X : Bare Die
Notice
Vitesse Semiconductor Corporation ("Vitesse") provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All informaiton in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited.
G52321-0, Rev 2.3 02/26/01
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 9
VITESSE
SEMICONDUCTOR CORPORATION
SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
Advance Product Information
VSC7991
This page left intentionally blank.
Page 10
(c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52321-0, Rev 2.3 02/26/01


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