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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package www..com *High voltage *Fast switching speed *Low saturation voltage *Built-in damper diode APPLICATIONS *For use in horizontal deflection output stages of TV's and CTV's circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BU406D BU407D Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BU406D BU407D BU406D BU407D CONDITIONS Open emitter VALUE 400 330 200 150 6 7 10 4 TC=25 60 150 -65~150 UNIT V VCEO VEBO IC ICM IB Ptot Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Open base Open collector V V A A A W Maximum operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS www..com BU406D BU407D SYMBOL MIN TYP. MAX UNIT BU406D VCEO(SUS) Collector-emitter sustaining voltage BU407D IC=100mA ; IB=0 200 V 150 VCEsat VBEsat Collector-emitter saturation voltage IC=5A ;IB=0.65A IC=5A ;IB=0.65A VCE=400V; VBE=-1.5V 1.0 V Base-emitter saturation voltage 1.3 V BU406D ICEV Collector cut-off current BU407D 15 VCE=330V; VBE=-1.5V VEB=6.0V; IC=0 IC=2A ; VCE=5V IF=5A IC=0.5A ;VCE=10V;f=1.0MHz IC=5A ;VCC=40V IBend=0.65A 10 15 400 mA IEBO hFE VF fT tf Emitter cut-off current mA DC current gain Diode forward voltage 1.5 V Transition frequency MHz Fall time 0.75 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BU406D BU407D Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 |
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