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BUX12
HIGH CURRENT NPN SILICON TRANSISTOR
s s s s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED
APPLICATIONS MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
s
1 2
TO-3
DESCRIPTION The BUX12 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = - 1.5V) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (Ic = 0) Collector Current Collector Peak Current (t P = 10 ms) Base Current Total Power Dissipation at T case 25 C
o
Value 300 300 250 7 20 25 4 150 -65 to 200 200
Unit V V V V A A A W
o o
Storage Temperature Max Operating Junction Temperature
C C
February 1997
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BUX12
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEO I CEX Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = 200 V V CE = 300 V T case = 125 o C V CE = 300 V V EB = 5 V I C = 200 mA I E = 50 mA IC = 5 A I C = 10 A I C = 10 A IC = 5 A I C = 10 A V CE = 30 V V CE = 140 V IC = 1 A f = 10 MHz I C = 10 A V CC = 150V I B = 0.5 A I B = 1.25 A I B = 1.25 A V CE = 4 V V CE = 4 V t=1s t=1s V CE = 15 V I B1 = 1.25 A I B1 = 1.25 A V CC = 150V 10 20 10 5 0.15 8 0.28 1.45 0.23 1 2 0.5 250 7 0.22 0.5 1.23 1 1.5 1.5 60 A A MHz s s s A V BE = -1.5V V BE = -1.5V Min. Typ. Max. 1.5 1.5 6 1 Unit mA mA mA mA V V V V V
I EBO
V CEO(sus) Collector-Emitter Sustaining Voltage V EBO V CE(sat) V BE(sat) h FE I S/b fT t on ts tf Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Second Breakdown Collector Current Transistor Frequency Turn-on Time See fig.2
Storage Time See fig.2 I C = 10 A Fall Time See fig.2 I B2 = -1.25 A Clamped E s/b Collector Current V clamp =250 V L = 500 H
Pulsed: Pulse duration = 300s, duty cycle 2 %
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BUX12
TO-3 (H) MECHANICAL DATA
mm MIN. A B C D E G N P R U V 30.10 3.88 10.9 16.9 26.2 4.09 39.50 1.185 0.152 0.96 TYP. 11.7 1.10 1.70 8.7 20.0 0.429 0.665 1.031 0.161 1.555 0.037 MAX. MIN. inch TYP. 0.460 0.043 0.066 0.342 0.787 MAX.
DIM.
P G
A
D C
U
V
O
N
R
B
P003N
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E
BUX12
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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