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TLL.540. Vishay Semiconductors Low Current LED in o 5 mm Tinted Diffused Package Color High efficiency red Yellow Green Type TLLR540. TLLY540. TLLG540. Technology GaAsP on GaP GaAsP on GaP GaP on GaP Angle of Half Intensity o 25 25 25 Features D D D D D D Low power consumption High brightness CMOS/MOS compatible Specified at IF = 2 mA Luminous intensity categorized Yellow and green color categorized 96 11505 Applications Low power DC circuits Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified TLLR540. ,TLLY540. ,TLLG540. , Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions Tamb 90C tp 10 ms Tamb 90C Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 7 0.15 20 100 -40 to +100 -55 to +100 260 500 Unit V mA A mW C C C C K/W t 5 s, 2 mm from body Document Number 83030 Rev. A3, 05-Oct 00 www.vishay.com 1 (7) TLL.540. Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25_C, unless otherwise specified High efficiency red (TLLR540. ) Parameter Luminous intensity 1) Test Conditions IF = 2 mA Type Symbol TLLR5400 IV TLLR5401 IV ld lp VF VR Cj Min 0.63 1 612 Typ 1.2 2 635 25 1.9 20 50 Max Unit mcd mcd nm nm deg V V pF Dominant wavelength IF = 2 mA Peak wavelength IF = 2 mA Angle of half intensity IF = 2 mA Forward voltage IF = 2 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V 625 2.4 6 v Yellow (TLLY540. ) Parameter Luminous intensity 1) Test Conditions IF = 2 mA Type Symbol TLLY5400 IV TLLY5401 IV ld lp VF VR Cj Min 0.63 1 581 Typ 1.2 2 585 25 2.4 20 50 Max Unit mcd mcd nm nm deg V V pF Dominant wavelength IF = 2 mA Peak wavelength IF = 2 mA Angle of half intensity IF = 2 mA Forward voltage IF = 2 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V 594 2.9 6 v Green (TLLG540. ) Parameter Luminous intensity 1) Test Conditions IF = 2 mA Type TLLG5400 TLLG5401 Symbol IV IV ld lp VF VR Cj Min 0.63 1 562 Typ 1.2 2 565 25 1.9 20 50 Max Unit mcd mcd nm nm deg V V pF Dominant wavelength IF = 2 mA Peak wavelength IF = 2 mA Angle of half intensity IF = 2 mA Forward voltage IF = 2 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V 575 2.4 6 v www.vishay.com 2 (7) Document Number 83030 Rev. A3, 05-Oct-00 TLL.540. Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 25 PV - Power Dissipation ( mW ) IF - Forward Current ( mA ) 100 High Efficiency Red 10 20 15 10 5 0 0 20 40 60 80 100 1 0.1 0 95 10050 tp/T=0.001 tp=10ms 1 2 3 4 5 95 10063 Tamb - Ambient Temperature ( C ) VF - Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 10 Iv rel - Relative Luminous Intensity IF - Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage 2.0 High Efficiency Red 1.6 8 6 1.2 4 2 0 0 20 40 60 80 100 0.8 0.4 IF=2mA 0 0 20 40 60 80 100 95 10064 Tamb - Ambient Temperature ( C ) 95 10051 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature 0 Iv rel - Relative Luminous Intensity 10 20 30 Figure 5. Rel. Luminous Intensity vs. Ambient Temperature 2.4 Iv rel - Relative Luminous Intensity High Efficiency Red 2.0 1.6 1.2 0.8 0.4 0 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 10 96 11490 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T 95 10060 1 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Document Number 83030 Rev. A3, 05-Oct 00 Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle www.vishay.com 3 (7) TLL.540. Vishay Semiconductors 100 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity High Efficiency Red 10 2.0 Yellow 1.6 1.2 1 0.8 0.4 0 0.1 0.01 0.1 95 10061 1 10 100 95 10054 0 20 40 60 80 100 IF - Forward Current ( mA ) Tamb - Ambient Temperature ( C ) Figure 7. Relative Luminous Intensity vs. Forward Current Figure 10. Rel. Luminous Intensity vs. Ambient Temperature 2.4 1.2 Iv rel - Relative Luminous Intensity High Efficiency Red 1.0 0.8 0.6 0.4 0.2 0 590 95 10040 Iv rel - Relative Luminous Intensity Yellow 2.0 1.6 1.2 0.8 0.4 0 610 630 650 670 690 9611590 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T l - Wavelength ( nm ) Figure 8. Relative Luminous Intensity vs. Wavelength Figure 11. Rel. Lumin. Intensity vs. Forw.Current / Duty Cycle 100 Iv rel - Relative Luminous Intensity 100 IF - Forward Current ( mA ) Yellow 10 Yellow 10 1 1 0.1 0.1 0 95 10053 tp/T=0.001 tp=10ms 1 2 3 4 5 0.01 0.1 95 10062 1 10 100 VF - Forward Voltage ( V ) IF - Forward Current ( mA ) Figure 9. Forward Current vs. Forward Voltage Figure 12. Relative Luminous Intensity vs. Forward Current www.vishay.com 4 (7) Document Number 83030 Rev. A3, 05-Oct-00 TLL.540. Vishay Semiconductors 1.2 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity Yellow 1.0 0.8 0.6 0.4 0.2 0 550 95 10039 2.4 Green 2.0 1.6 1.2 0.8 0.4 0 570 590 610 630 650 96 11591 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T l - Wavelength ( nm ) Figure 13. Relative Luminous Intensity vs. Wavelength Figure 16. Rel. Lumin. Intensity vs. Forw.Current / Duty Cycle 100 Iv rel - Relative Luminous Intensity 100 IF - Forward Current ( mA ) Green 10 Green 10 1 1 0.1 0.1 0 95 10056 tp/T=0.001 tp=10ms 1 2 3 4 5 0.01 0.1 95 10059 1 10 100 VF - Forward Voltage ( V ) IF - Forward Current ( mA ) Figure 14. Forward Current vs. Forward Voltage 1.6 Iv rel - Relative Luminous Intensity Figure 17. Relative Luminous Intensity vs. Forward Current 1.2 Iv rel - Relative Luminous Intensity Green 1.2 Green 1.0 0.8 0.6 0.4 0.2 0 520 0.8 0.4 IF=2mA 0 0 20 40 60 80 100 540 560 580 600 620 95 10057 Tamb - Ambient Temperature ( C ) 95 10038 l - Wavelength ( nm ) Figure 15. Rel. Luminous Intensity vs. Ambient Temperature Figure 18. Relative Luminous Intensity vs. Wavelength Document Number 83030 Rev. A3, 05-Oct 00 www.vishay.com 5 (7) TLL.540. Vishay Semiconductors Dimensions in mm 95 10916 www.vishay.com 6 (7) Document Number 83030 Rev. A3, 05-Oct-00 TLL.540. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83030 Rev. A3, 05-Oct 00 www.vishay.com 7 (7) |
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