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| New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.040 at VGS = 4.5 V 12 0.048 at VGS = 2.5 V 0.063 at VGS = 1.8 V ID (A)a 4.5 4.5 4.5 4.5 nC Qg (Typ.) FEATURES * Halogen-free * TrenchFET(R) Power MOSFET * New Thermally Enhaced PowerPAK(R) SC-70 Package - Small Footprint Area RoHS COMPLIANT APPLICATIONS PowerPAK SC-70-6 Dual 1 S1 2 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 2.05 mm 3 D2 * Load Switch for Portable Applications D1 D2 Marking Code CAX Part # code XXX Lot Traceability and Date code G1 G2 S1 S2 N-Channel MOSFET Ordering Information: SiA912DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C TC = 25 C TC = 70 C Maximum Power Dissipation TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e Symbol VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C ID IDM IS PD TJ, Tstg Limit 12 8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A W C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t5s 52 65 Maximum Junction-to-Ambientb, f C/W RthJC Steady State 12.5 16 Maximum Junction-to-Case (Drain) Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 C/W. Document Number: 74953 S-80436-Rev. B, 03-Mar-08 www.vishay.com 1 Parameter New Product SiA912DJ Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS /TJ VGS(th) /TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss VDS = 6 V, VGS = 8 V, ID = 5.5 A Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 4.4 A, di/dt = 100 A/s, TJ = 25 C IS = 4.4 A, VGS = 0 V 0.8 15 8 8.5 6.5 VDD = 6 V, RL = 1.6 ID 4.4 A, VGEN = 8 V, Rg = 1 VDD = 6 V, RL = 1.4 ID 4.4 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 6 V, VGS = 4.5 V, ID = 5.5 A VDS = 6 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS , ID = 250 A VDS = 0 V, VGS = 8 V VDS = 12 V, VGS = 0 V VDS = 12 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.2 A Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time TC = 25 C 4.5 20 1.2 30 20 A V ns nC ns 400 120 70 7.5 4.5 0.6 0.8 2.5 5 15 35 15 5 10 15 10 10 25 55 25 10 15 25 15 ns 11.5 6.8 nC pF VGS = 2.5 V, ID = 3.8 A VGS = 1.8 V, ID = 1.6 A VDS = 6 V, ID = 4.2 A - 20 0.033 0.039 0.051 13 0.040 0.048 0.063 S 0.4 12 12 - 2.8 1.0 100 -1 - 10 V mV/C V ns A A Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74953 S-80436-Rev. B, 03-Mar-08 New Product SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) VGS = 2 V I D - Drain Current (A) 8 10 12 6 8 VGS = 1.5 V 4 TC = 25 C 2 TC = 125 C 4 VGS = 1 V 0 0.0 0.4 0.8 1.2 1.6 2.0 TC = - 55 C 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 0.09 R DS(on) - On-Resistance () 0.08 0.07 0.06 0.05 0.04 0.03 0 4 8 12 16 20 ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V VGS = 1.8 V C - Capacitance (pF) 600 Transfer Characteristics 500 Ciss 400 300 200 Coss 100 Crss 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 5.5 A VGS - Gate-to-Source Voltage (V) 6 VDS = 6 V 4 1.6 1.5 1.4 R DS(on) - On-Resistance (Normalized) Capacitance VGS = 4.5 V, 2.5 V, 1.8 V, ID = 4.2 A 1.3 1.2 1.1 1.0 0.9 0.8 VDS = 9.6 V 2 0 0 2 4 6 8 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74953 S-80436-Rev. B, 03-Mar-08 www.vishay.com 3 New Product SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.12 10 R DS(on) - On-Resistance () 0.10 I S - Source Current (A) 0.08 TJ = 150 C TJ = 25 C 0.06 ID = 4.2 A, 125 C 1 0.04 ID = 4.2 A, 25 C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.02 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 0.7 ID = 250 A 0.6 VGS(th) (V) 0.5 0.4 0.3 On-Resistance vs. Gate-to-Source Voltage 20 15 Power (W) - 25 0 25 50 75 100 125 150 10 5 0.2 0.1 - 50 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power (Junction-to-Ambient) 100 s 1 ms 10 ms 100 ms 1s 10 s DC TA = 25 C Single Pulse 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified BVDSS Limited 1 0.1 Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74953 S-80436-Rev. B, 03-Mar-08 New Product SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 14 12 ID - Drain Current (A) 10 8 6 4 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Power Dissipation (W) 6 8 4 Package Limited 2 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74953 S-80436-Rev. B, 03-Mar-08 www.vishay.com 5 New Product SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74953. www.vishay.com 6 Document Number: 74953 S-80436-Rev. B, 03-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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