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| an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic`NletalKeramic Package Absolute Maximum Ratings at 25C UNLESS C-iTRW:SE `ICTED. T3LE?ANCES A?E (xI, -- IN'HES =.O"`j' I IMETERS ; 13yy' I Electrical Characteristics Parameter at 25C Symbol Min Max Units Test Conditions Collector-Emitter Breakdown Voltage Collector-Emitterleakage Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility Current BV,,, ICES RW(X) PO"T GP `lC 65 1.5 5.8 V mA "C/w w dB % lc=l 2 mA v,,=40 v V,,=28 V, P&.2 V,,=28 V, P,,=1.2 W, F=1.20,1.30,1.40 GHz 6.0 7.0 45 - W, F=1.20, 1.30, 1.40GHz GHz GHz GHz GHz GHz V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40 Vcc=28 V, P,,=l.2 W, F=l.20,1.30,1.40 RL VSWR-T VSWR-S 6 - 3:l 1S:l dB - V,,=28 V, P&.2 W, F=l.20,1.30,1.40 V,,=28 V, P,,=l.2 W, F=l.20,1.30,1.40 V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40 Broadband F(GHz) Test Fixture Impedances z,,m z&-4 1.20 1.30 TBD TBD TBD TBD |
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