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| T=- `5 an AMP cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package . Absolute Maximum Ratings at 25C Parameter Collector-Emitter Voltage Symbol VCES Rating 65 Units V StorageTemperature TSTC -65 to +200 "C i .063r.00? :1.52+.0:> Electrical Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Overdrive Stability Load Mismatch Tolerance Load Mismatch Stablility at 25C Symbol BV,,, ICES R-w(X) POUT GP % Min 65 Max 7.5 0.3 Units V mA "CM. W dB % dB dB I,=40 mA V,,=36 V lest Conditions V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz V,,=36 V. P,,=23 W, F=2.7,2.8,2.9 GHz V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz `I,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz V,,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz I',,=36 V, P,,=23 W, F=2.7,2.8,2.9 GHz 110 6.8 35 6 - 1.0 2:l 1.5:1 RL OD-S VSWR-T VSWR-S Broadband Test Fixture impedances TfST - ::XTUR: ZIRCWT -I - TESi ;IXTlJRE OUTPUT CIRttliT 1 I 2.70 2.80 2.90 I I I 4.3 - j7.0 4.4 - j6.4 4.6 - j5.8 I I I 2.6 - j3.9 2.6 - j3.5 2.9 - j3.1 I 3 I I A- - - Specifications Subjectto ChangeWithoutNotice. Radar Pulsed Power Transistor, 11OW PH2729-11 OM v2.00 RF Test Fixture B4N4NA JACKS ) SMA CONNECTOR 111 -`LpH, j-%NSON 5oos41V104KP4 VRAP AROUND GROWD RIBBON 2052-5636-02 ci7-11- / LTRnNsIsTrR cLnNP4 TOP VrEV Test Fixture PC Board Dimensions O1 0 |
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