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W27E010 128K x 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The W27E010 provides an electrical chip erase function.
FEATURES
* * * * *
High speed access time: 45/55/70/90/120 nS (max.) Read operating current: 30 mA (typ.) Erase/Programming operating current: 1 mA (typ.) Standby current: 5 A (typ.) Single 5V power supply
* * * *
+14V erase/+12V programming voltage Fully static operation All inputs and outputs directly TTL/CMOS compatible Three-state outputs
* Available packages: 32-pin 600 mil DIP, 450 mil SOP and PLCC
PIN CONFIGURATIONS
Vpp A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 / VVP pcGN p c MC 1 33 21 Vcc PGM NC A14 A13 A8 A9 A11 OE A10 CE Q7 Q6 Q5 Q4 Q3
BLOCK DIAGRAM
PGM CE OE
CONTROL
OUTPUT BUFFER
Q0 . . Q7
A0 . . A16
DECODER
CORE ARRAY
VCC GND VPP
PIN DESCRIPTION
AAA 111 256
A7 A6 A5 A4 A3 A2 A1 A0 Q0
4 5 6 7 8 9 10 11 12 1 13 4
3 0 29 28 27 26 32-pin PLCC 25 24 23 1 1 1 1 1 2 22 5 6 7 8 9 0 21
32
SYMBOL A0-A16 Q0-Q7
A14 A13 A8 A9 A11 OE A10 CE Q7
Q QGQ QQQ 1 2N3 456 D
CE OE PGM VPP VCC GND NC
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Output Enable Program Enable Program/Erase Supply Voltage Power Supply Ground No Connection
FUNCTIONAL DESCRIPTION
-1Publication Release Date: May 1997 Revision A5
W27E010
Read Mode
Like conventional UVEPROMs, the W27E010 has two control functions, both of which produce data at the outputs. CE is for power control and chip select. OE controls the output buffer to gate data to the output pins. When addresses are stable, the address access time (TACC) is equal to the delay from CE to output (TCE), and data are available at the outputs TOE after the falling edge of OE, if TACC and TCE timings are met.
Erase Mode
The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs, which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half an hour), the W27E010 uses electrical erasure. Generally, the chip can be erased within 100 mS by using an EPROM writer with a special erase algorithm. Erase mode is entered when VPP is raised to VPE (14V), VCC = VCE (5V), CE = VIL, (0.8V or below but higher than GND), OE = VIH (2V or above but lower than VCC), A9 = VHH (14V), A0 = VIL, and all other address pins equal VIL and data input pins equal VIH. Pulsing PGM low starts the erase operation.
Erase Verify Mode
After an erase operation, all of the bytes in the chip must be verified to check whether they have been successfully erased to "1" or not. The erase verify mode automatically ensures a substantial erase margin. This mode will be entered after the erase operation if VPP = VPE (14V), CE = VIL, and OE = VIL, PGM = VIH.
Program Mode
Programming is performed exactly as it is in conventional UVEPROMs, and programming is the only way to change cell data from "1" to "0." The program mode is entered when VPP is raised to VPP (12V), VCC = VCP (5V), CE = VIL, OE = VIH, the address pins equal the desired addresses, and the input pins equal the desired inputs. Pulsing PGM low starts the programming operation.
Program Verify Mode
All of the bytes in the chip must be verified to check whether they have been successfully programmed with the desired data or not. Hence, after each byte is programmed, a program verify operation should be performed. The program verify mode automatically ensures a substantial program margin. This mode will be entered after the program operation if VPP = VPP (12V), CE = VIL, OE = VIL, and PGM = VIH.
Erase/Program Inhibit
Erase or program inhibit mode allows parallel erasing or programming of multiple chips with different data. When CE = VIH, erasing or programming of non-target chips is inhibited, so that except for the CE, the W27E010 may have common inputs.
-2-
W27E010
Standby Mode
The standby mode significantly reduces VCC current. This mode is entered when CE = VIH. In standby mode, all outputs are in a high impedance state, independent of OE and PGM.
Two-line Output Control
Since EPROMs are often used in large memory arrays, the W27E010 provides two control inputs for multiple memory connections. Two-line control provides for lowest possible memory power dissipation and ensures that data bus contention will not occur.
System Considerations
EPROM power switching characteristics require careful device decoupling. System designers are concerned with three supply current issues: standby current levels (ISB), active current levels (ICC), and transient current peaks produced by the falling and rising edges of CE. Transient current magnitudes depend on the device output's capacitive and inductive loading. Two-line control and proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1 F ceramic capacitor connected between its VCC and GND. This high frequency, low inherentinductance capacitor should be placed as close as possible to the device. Additionally, for every eight devices, a 4.7 F electrolytic capacitor should be placed at the array's power supply connection between VCC and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace inductances.
TABLE OF OPERATING MODES
VPP = 12V, VPE = 14V, VHH = 12V, VCP = 5V, X=VIH or VIL
MODE CE Read Output Disable Standby (TTL) Standby (CMOS) Program Program Verify Program Inhibit Erase Erase Verify Erase Inhibit Product IdentifierManufacturer Product Identifier-Device VIL VIL VIH VCC 0.3V VIL VIL VIH VIL VIL VIH VIL VIL OE VIL VIH X X VIH VIL X VIH VIL X VIL VIL PGM X X X X VIL VIH X VIL VIH X X X
PINS A0 X X X X X X X VIL X X VIL VIH A9 X X X X X X X VPE X X VHH VHH VCC VCC VCC VCC VCC VCP VCP VCP VCC VCC VCP VCC VCC VPP VCC VCC VCC VCC VPP VPP VPP VPE VPE VPE VCC VCC OUTPUTS DOUT High Z High Z High Z DIN DOUT High Z FF (Hex) DOUT High Z DA (Hex) 01 (Hex)
-3-
Publication Release Date: May 1997 Revision A5
W27E010
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER Ambient Temperature with Power Applied Storage Temperature Voltage on all Pins with Respect to Ground Except VCC, VPP and A9 Pins Voltage on VCC Pin with Respect to Ground Voltage on VPP Pin with Respect to Ground Voltage on A9 Pin with Respect to Ground RATING -55 to +125 -65 to +125 -0.5 to VCC +0.5 -0.5 to +7 -0.5 to +14.5 -0.5 to +14.5 UNIT C C V V V V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.
DC Erase Characteristics
(TA = 25 C 5 C, VCC = 5.0V 10%, VHH = 14V)
PARAMETER
SYM.
CONDITIONS MIN.
LIMITS TYP. MAX. 10 30
UNI T A mA
Input Load Current VCC Erase Current
ILI ICP
VIN = VIL or VIH CE = VIL, OE = VIH, PGM = VIL, A9 = VHH
-10 -
VPP Erase Current
IPP
CE = VIL, OE = VIH, PGM = VIL, A9 = VHH
-
-
30
mA
Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage (Verify) A9 Erase Voltage VPP Erase Voltage VCC Supply Voltage (Erase)
VIL VIH VOL VOH VID VPE VCE
IOL = 2.1 mA IOH = -0.4 mA -
-0.3 2.4 2.4 13.75 13.75 4.5
14.0 14.0 5.0
0.8 5.5 0.45 14.25 14.25 5.5
V V V V V V V
Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
-4-
W27E010
CAPACITANCE
(VCC = 5V, TA = 25 C, f = 1 MHz)
PARAMETER Input Capacitance Output Capacitance
SYMBOL CIN COUT
CONDITIONS VIN = 0V VOUT = 0V
MAX. 6 12
UNIT pF pF
AC CHARACTERISTICS
AC Test Conditions
PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load 45/55/70 nS 0 to 3.0V 5 nS 1.5V/1.5V CL = 30 pF, IOH/IOL = -0.4 mA/2.1 mA CONDITIONS 90/120 nS 0.45V to 2.4V 10 nS 0.8V/2.0V CL = 100 pF, IOH/IOL = -0.4 mA/2.1 mA
AC Test Load and Waveforms
+1.3V (IN914)
3.3K ohm
DOUT
100 pF for 90/120 nS (Including Jig and Scope) 30 pF for 45/55/70 nS (Including Jig and Scope)
Input
Test Points 2.4V
2.0V 0.8V
Output
Test Points
2.0V 0.8V
For 90/120 nS
0.45V
Input
Test Point 3.0V
Output
Test Point
1.5V 1.5V
For 45/55/70 nS
0V
-5-
Publication Release Date: May 1997 Revision A5
W27E010
READ OPERATION DC CHARACTERISTICS
(Vcc = 5.0V 10%)
PARAMETER
SYM.
CONDITIONS MIN.
LIMITS TYP. 5 MAX. 5 10 1.0 100 30
UNIT
Input Load Current Output Leakage Current Standby VCC Current (TTL input) Standby VCC Current (CMOS input) VCC Operating Current
ILI ILO ISB ISB1 ICC
VIN = 0V to VCC VOUT = 0V to VCC CE = VIH CE = VCC 0.2V CE = VIL IOUT = 0 mA f = 5 MHz VPP = VCC IOL = 2.1 mA IOH = -0.4 mA -
-5 -10 -
A A mA A mA
VPP Operating Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VPP Operating Voltage
IPP VIL VIH VOL VOH VPP
-0.3 2.0 2.4 VCC -0.7
-
10 0.8 VCC +0.5 0.45 VCC
A V V V V V
READ OPERATION AC CHARACTERISTICS
(VCC = 5.0V 10%, for 70, 90 and 120 nS; VCC = 5.0V 5% for 45, 55 nS, TA = 0 to 70 C)
PARAMETER SYM. W27E010-45 MIN. Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time TRC TCE TACC TOE TDF TOH 45 0 MAX. 45 45 20 20 W27E010-55 MIN. 55 0 MAX. 55 55 25 20 W27E010-70 MIN. 70 0 MAX. 70 70 30 25 W27E010-90 MIN. 90 0 MAX. 90 90 40 25 W27E010-12 MIN. 120 0 MAX. 120 120 55 30 nS nS nS nS nS nS UNIT
OE
High to High-Z Output
Output Hold from Address Change
Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
-6-
W27E010
DC PROGRAMMING CHARACTERISTICS
(VCC = 5.0V 10%, TA = 25 C 5 C)
PARAMETER Input Load Current VCC Program Current VPP Program Current Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage (Verify) A9 Silicon I.D. Voltage VPP Program Voltage VCC Supply Voltage (Program)
SYM. ILI ICP IPP VIL VIH VOL VOH VID VPP VCP
CONDITIONS MIN. VIN = VIL or VIH CE = VIL, OE = VIH, PGM = VIL CE = VIL, OE = VIH, PGM = VIL IOL = 2.1 mA IOH = -0.4 mA -0.3 2.4 2.4 11.5 11.75 4.5 -
LIMITS TYP. 12.0 12.0 5.0 MAX. 10 30 30 0.8 5.5 0.45 12.5 12.25 5.5
UNIT A mA mA V V V V V V V
AC PROGRAMMING/ERASE CHARACTERISTICS
(VCC = 5.0V 10%, TA = 25 C 5 C)
PARAMETER VPP Setup Time Address Setup Time Data Setup Time PGM Program Pulse Width PGM Erase Pulse Width Data Hold Time OE Setup Time Data Valid from OE OE High to Output High Z Address Hold Time after PGM High Address Hold Time (Erase) CE Setup Time
SYM. MIN. TVPS TAS TDS TPWP TPWE TDH TOES TOEV TDFP TAH TAHE TCES 2.0 2.0 2.0 95 95 2.0 2.0 0 0 2.0 2.0
LIMITS TYP. 100 100 MAX. 105 105 150 130 -
UNIT S S S S mS S S nS nS S S S
Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
-7-
Publication Release Date: May 1997 Revision A5
W27E010
TIMING WAVEFORMS
AC Read Waveform
VIH Address VIL VIH CE VIL Address Valid
TCE
VIH OE VIL TACC Outputs High Z Valid Output High Z TOE TDF TOH
Erase Waveform
Read Manufacturer Read Device Chip Erase A9 = 14.0V Others = V IL Address Stable TAS 01 TDS 14.0V 5.0V TVPS VPP VIH CE VIL TOE VIH OE VIL TPWE TOEV TOE TOES TOE TCE 5V TAHC Data All One TDH TDFP DOUT T AH DOUT Address Stable Address Stable TACC DOUT Erase Verify Blank Check Read Verify
SID SID A9 = 12.0V Others = V IL A0 = V IL VIL TAS DA
A0=V IH Others=V IL
VIH Address
TAS
Data
TCES PGM
-8-
W27E010
Timing Waveforms, Continued
Programming Waveform
Program VIH Address VIL TAS Address Stable
Program Verify Address Stable TDFP
Read Verify Address Valid
TACC DOUT DOUT
Data
Data In Stable
DOUT
TDS 12.0V VPP 5.0V VIH CE VIL VIH OE VIL VIH PGM VIL TPWP
TDH
TAH
5V TVPS TCES
TOE TOES
TOEV
-9-
Publication Release Date: May 1997 Revision A5
W27E010
SMART PROGRAMMING ALGORITHM
Start
Address = First Location
Vcc = 5V Vpp = 12V
X=0
Program One 100 Pulse S
Increment X Yes X = 25? No Fail Verify One Byte Pass Increment Address No Last Address? Yes Vcc = 5V Vpp = 5V Verify One Byte Pass Fail
Compare All Bytes to Original Data Pass Pass Device
Fail
Fail Device
- 10 -
W27E010
SMART ERASE ALGORITHM
Start
X=0
Vcc = 5V Vpp = 14V
A9 = 14V; A0 = V IL Chip Erase 100 mS Pulse
Address = First Location
Increment X No Erase Verify Pass Yes Increment Address No Last Address? Yes Vcc = 5V Vpp = 5V Fail X = 20?
Compare All Bytes to FFs (HEX) Pass Pass Device
Fail
Fail Device
- 11 -
Publication Release Date: May 1997 Revision A5
W27E010
ORDERING INFORMATION
PART NO. ACCESS TIME (nS) 45 55 70 90 120 45 55 70 90 120 45 55 70 90 120 POWER SUPPLY CURRENT MAX. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 STANDBY VCC CURRENT MAX. (A) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 PACKAGE
W27E010-45 W27E010-55 W27E010-70 W27E010-90 W27E010-12 W27E010S-45 W27E010S-55 W27E010S-70 W27E010S-90 W27E010S-12 W27E010P-45 W27E010P-55 W27E010P-70 W27E010P-90 W27E010P-12
Notes:
600 mil DIP 600 mil DIP 600 mil DIP 600 mil DIP 600 mil DIP 450 mil SOP 450 mil SOP 450 mil SOP 450 mil SOP 450 mil SOP 32-pin PLCC 32-pin PLCC 32-pin PLCC 32-pin PLCC 32-pin PLCC
1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure.
- 12 -
W27E010
PACKAGE DIMENSIONS
32-pin P-DIP
Dimension in Inches Dimension in mm
Symbol
Min. Nom. Max. Min. Nom. Max.
0.210 0.010 0.150 0.016 0.048 0.008 0.155 0.018 0.050 0.010 1.650 0.590 0.540 0.090 0.120 0 0.630 0.650 0.600 0.550 0.100 0.130 0.160 0.022 0.054 0.014 1.660 0.610 0.555 0.110 0.140 15 0.670 0.085 14.99 13.84 2.29 3.05 0 16.00 16.51 0.25 3.81 0.41 1.22 0.20 3.94 0.46 1.27 0.25 41.91 15.24 13.97 2.54 3.30 4.06 0.56 1.37 0.36 42.16 15.49 14.10 2.79 3.56 15 17.02 2.16 5.33
D
32 17
A A1 A2 B B1 c D E E1 e1 L
a
1
E
eA S Notes:
1 16
S
2
E c
AA L B B1 e1
1
A
Base Plane Seating Plane
a eA
1. Dimensions D Max. & S include mold flash or tie bar burrs. 2. Dimension E1 does not include interlead flas 3. Dimensions D & E1 include mold mismatch a are determined at the mold parting line. 4. Dimension B1 does not include dambar protrusion/intrusion. 5. Controlling dimension: Inches. 6. General appearance spec. should be based o final visual inspection spec.
32-pin SO Wide Body
Dimension in Inches Dimension in mm
Symbol
32 17
Min. Nom. Max.
0.118 0.004 0.101 0.014 0.006 0.106 0.016 0.008 0.805 0.440 0.044 0.546 0.023 0.047 0.445 0.050 0.556 0.031 0.055 0.111 0.020 0.012 0.817 0.450 0.056 0.556 0.039 0.063 0.036 0.004 0 10
Min. Nom. Max.
3.00 0.10 2.57 0.36 0.15 2.69 0.41 0.20 20.45 11.18 1.12 13.87 0.58 1.19 11.30 1.27 14.12 0.79 1.40 2.82 0.51 0.31 20.75 11.43 1.42 14.38 0.99 1.60 0.91 0.10 0 10
e1
EH
E
L
Detail F
1 16
b
A A1 A2 b c D E e HE L LE S y Notes:
D
e1 c
2
A S y e
1
A
A
LE
1. Dimensions D Max. & S include mold flash or tie bar burrs. 2. Dimension b does not include dambar protrusion/intrusion. 3. Dimensions D & E include mold mismatch . and are determined at the mold parting line. 4. Controlling dimension: Inches. 5. General appearance spec should be based on final visual inspection spec.
See Detail F
Seating Plane
- 13 -
Publication Release Date: May 1997 Revision A5
W27E010
Package Dimensions, Continued
32-Lead PLCC
HE E
4
1
32
30
Symbol
5 29
Dimension in Inches
Dimension in mm
Min. Nom. Max.
0.140 0.020 0.105 0.026 0.016 0.008 0.547 0.447 0.044 0.490 0.390 0.585 0.485 0.075 0.110 0.028 0.018 0.010 0.550 0.450 0.050 0.510 0.410 0.590 0.490 0.090 0.115 0.032 0.022 0.014 0.553 0.453 0.056 0.530 0.430 0.595 0.495 0.095 0.004 0 10
Min. Nom. Max.
3.56 0.50 2.67 0.66 0.41 0.20 13.89 11.35 1.12 12.45 9.91 14.86 12.32 1.91 2.80 0.71 0.46 0.25 13.97 11.43 1.27 12.95 10.41 14.99 12.45 2.29 2.93 0.81 0.56 0.35 14.05 11.51 1.42 13.46 10.92 15.11 12.57 2.41 0.10 0 10
D
D
D
H
G
13
21
14
20
c
A A1 A2 b1 b c D E e GD GE HD HE L y Notes:
L
2
A
A
Seating Plane
e
b b1
1
A y
1. Dimensions D & E do not include interlead flash. 2. Dimension b does not include dambar protrusion/intrusion. 3. Controlling dimension: Inches. 4. General appearance spec. should be based on final visual inspection sepc.
GE
Headquarters
No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5792647 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-7197006
Winbond Electronics (H.K.) Ltd.
Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064
Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab.
2730 Orchard Parkway, San Jose, CA 95134, U.S.A. TEL: 1-408-9436666 FAX: 1-408-9436668
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-7190505 FAX: 886-2-7197502
Note: All data and specifications are subject to change without notice.
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