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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N100P IXFP5N100P RDS(on) VDSS ID25 = 1000V = 5A 2.8 TO-263 (IXFA) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 1000 1000 30 40 5 10 5 300 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C C C Nm/lb.in. g g g G = Gate S = Source G G D S S (TAB) TO-247 (IXFH) (TAB) TO-220 (IXFP) DS (TAB) 1.6mm (0.062) from case for 10s Plastic body for 10s Mounting torque TO-263 TO-220 TO-247 (TO-220,TO-247) 300 260 1.13 / 10 2.5 3.0 6.0 D = Drain TAB = Drain Features International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 1000 3.0 6.0 V V Easy to mount Space savings Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Uninterrupted power supplies AC motor control High speed power switching applications DS99923(07/08) 100 nA 10 A 750 A 2.8 VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2008 IXYS CORPORATION, All rights reserved IXFA5N100P IXFH5N100P IXFP5N100P Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS RthCS (TO-220) (TO-247) 0.50 0.25 VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 5 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS= 20V, ID = 0.5 * ID25, Note 1 Gate input resistance Characteristic Values Min. Typ. Max 2.4 4.0 1.6 1830 113 20 12 13 30 37 33.4 10.6 14.4 S pF pF pF ns ns ns ns nC nC nC 0.50 C/W C/W C/W Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC e P TO-247 (IXFH) Outline Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions VGS = 0V Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 5 20 1.3 200 7.4 0.43 A A V ns A C Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 5A, VGS = 0V -di/dt = 100A/s VR = 100V TO-220 (IXFP) Outline Note 1: Pulse test, t 300s; duty cycle, d 2%. TO-263 (IXFA) Outline Pins: 1 - Gate 2 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA5N100P IXFH5N100P IXFP5N100P Fig. 1. Output Characteristics @ 25C 5.0 4.5 4.0 6 3.5 7V VGS = 10V 8V 8 7 VGS = 10V 9V 8V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes ID - Amperes 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 6V 5 4 3 2 6V 1 7V 5V 0 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 5.0 4.5 4.0 3.5 7V VGS = 10V 8V 2.4 2.8 Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized ID - Amperes 2.0 I D = 5A I D = 2.5A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 3 6 9 12 15 18 21 24 27 30 5V 6V 1.6 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs. Drain Current 2.6 2.4 2.2 VGS = 10V TJ = 125C 5.5 5.0 4.5 4.0 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized ID - Amperes TJ = 25C 0 1 2 3 4 5 6 7 8 2.0 1.8 1.6 1.4 1.2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 1.0 0.8 ID - Amperes TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXFA5N100P IXFH5N100P IXFP5N100P Fig. 7. Input Admittance 4.5 4.0 3.5 TJ = 125C 25C - 40C 6.0 5.5 5.0 4.5 25C 125C TJ = - 40C Fig. 8. Transconductance g f s - Siemens 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 ID - Amperes 3.0 2.5 2.0 1.5 1.0 0.5 0.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 14 12 7 10 9 8 VDS = 500V I D = 2.5A I G = 10mA Fig. 10. Gate Charge IS - Amperes VGS - Volts TJ = 125C TJ = 25C 10 8 6 4 2 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 6 5 4 3 2 1 0 0 4 8 12 16 20 24 28 32 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 10,000 1.00 Fig. 12. Maximum Transient Thermal Impedance f = 1 MHz Capacitance - PicoFarads Ciss Z(th)JC - C / W 25 30 35 40 1,000 Coss 100 Crss 0.10 10 0 5 10 15 20 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_5N100P(55-744)6-27-08 |
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