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| www..com CMT18N20 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ! ! FEATURES ! ! Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature Rugged - SOA is Power Dissipation Limited Source-to-Drain Characterized for Use With Inductive Loads PIN CONFIGURATION TO-220 SYMBOL Front View D GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number CMT18N20N220 Package TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation Derate above 25 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25) Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds (1) Pulse Width and frequency is limited by TJ(max) and thermal response JC JA TL 1.00 62.5 260 /W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD Value 18 72 20 40 125 1.00 -55 to 150 224 V V W W/ mJ Unit A 2001/11/01 Draft Champion Microelectronic Corporation Page 1 CMT18N20 POWER FIELD EFFECT TRANSISTOR ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT18N20 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = Rated VDSS, VGS = 0 V) (VDS = 0.8Rated VDSS, VGS = 0 V, TJ = 125) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) * Drain-Source On-Voltage (VGS = 10 V) (ID = 5.0 A) Forward Transconductance (VDS = 50 V, ID = 10 A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 30 V, ID = 10 A, VGS = 10 V, RG = 4.7) * (VDS = 0.8Rated VDSS, ID = Rated ID, VGS = 10 V)* Symbol V(BR)DSS IDSS 0.025 1.0 IGSSF IGSSR VGS(th) RDS(on) VDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 36 16 26 4.5 7.5 6.8 1600 750 300 30 60 80 60 63 2.0 100 100 4.0 0.18 6.0 nA nA V V mhos pF pF pF ns ns ns ns nC nC nC nH nH Min 200 Typ Max Units V mA Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = Rated ID, dIS/dt = 100A/s) VSD ton trr ** 450 1.5 V ns ns * Pulse Test: Pulse Width 300s, Duty Cycle 2% ** Negligible, Dominated by circuit inductance 2001/11/01 Draft Champion Microelectronic Corporation Page 2 CMT18N20 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2001/11/01 Draft Champion Microelectronic Corporation Page 3 CMT18N20 POWER FIELD EFFECT TRANSISTOR 2001/11/01 Draft Champion Microelectronic Corporation Page 4 CMT18N20 POWER FIELD EFFECT TRANSISTOR 2001/11/01 Draft Champion Microelectronic Corporation Page 5 CMT18N20 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 D A c1 F E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e1 e b A1 c Side View L1 Front View 2001/11/01 Draft Champion Microelectronic Corporation Page 6 CMT18N20 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for Use of CMC products in such applications is In order to minimize risks associated with the customer's applications, the use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2001/11/01 Draft Champion Microelectronic Corporation Page 7 |
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