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| Transistors 2SB0774 (2SB774) Silicon PNP epitaxial planar type For low-frequency amplification 5.00.2 Unit: mm 4.00.2 0.70.1 0.70.2 12.90.5 * High emitter-base voltage (Collector open) VEBO * Protective diodes and resistances between emitter and base can be omitted. Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -30 -25 -15 -100 -200 400 150 -55 to +150 Unit V V 2.30.2 0.45+0.15 -0.1 2.5+0.6 -0.2 1 23 5.10.2 0.45+0.15 -0.1 2.5+0.6 -0.2 Features V mA mA mW C C 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common-emitter reverse transfer) VCE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCB = -10 V, IE = 0 VCE = -20 V, IB = 0 VCE = -10 V, IC = -2 mA VCE = -2 V, IC = -100 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 2 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 150 4 210 90 - 0.5 Min -30 -25 -15 -1 -100 460 Typ Max Unit V V V A A V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 R 210 to 340 S 290 to 460 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00053BED 1 2SB0774 PC Ta 500 -240 Ta = 25C IC VCE -200 IC VBE IB = -1.8 mA -1.6 mA -1.4 mA -1.2 mA -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA - 0.2 mA VCE = -10 V Collector power dissipation PC (mW) 400 -200 Collector current IC (mA) -160 300 Collector current IC (mA) -160 -120 25C -80 Ta = 75C -25C -120 200 -80 100 -40 -40 0 0 40 80 120 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 600 hFE IC VCE = -10 V 1 000 fT I E VCB = -10 V Ta = 25C Forward current transfer ratio hFE -10 400 Ta = 75C 25C -1 300 -25C 200 Transition frequency fT (MHz) -10 -100 500 100 - 0.1 Ta = 75C 25C -25C -1 -10 -100 100 - 0.01 - 0.1 0 - 0.1 -1 10 0.1 1 10 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 12 IE = 0 f = 1 MHz Ta = 25C 10 8 6 4 2 0 -1 -10 -100 Collector-base voltage VCB (V) 2 SJC00053BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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