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| IRFP640 HEXFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast switching Ease of Paralleling Simple Drive Requirements (R) Power MOSFET VDSS = 200V ID = 18A RDS(ON) =0.18 Description www..com Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Pin1-Gate Pin2-Drain Pin3-Source Absolute Maximum Ratings Parameter Max. Units ID@TC=25 C Continuous Drain Current, VGS@10V ID@TC=100C Continuous Drain Current, VGS@10V IDM Pulsed Drain Current Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current 18 11 72 125 1.0 20 580 18 13 5.0 -55 to +150 300(1.6mm from case) 10 Ibfin(1.1Nm) Min. Typ. Max. Units A W W/ C V mJ A mJ V/ns C PD@TC=25C Power Dissipation Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter RJC RCS RJA Junction-to-case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient -- -- -- -- 0.50 -- 1.0 -- 62 C/W IRFP640 HEXFET Electrical Characteristics @TJ=25 C(unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/ TJ (R) Power MOSFET Test Conditions Min. Typ. Max. Units 200 -- -- 2.0 6.7 -- -- -- -- -- -- -- -- -- -- -- -- -- 0.29 -- -- -- -- -- -- -- -- -- -- 14 51 45 36 4.5 -- -- 0.18 4.0 -- 25 250 100 -100 70 13 39 -- -- -- -- -- V VGS=0V,ID=250uA Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance V/C Reference to 25C,ID=1mA VGS=10V,ID=11A V S A nA VDS=50V,ID=11A VDS=200V,VGS=0V VDS=160V,VGS=0V,TJ=125C VGS=20V VGS=-20V RDS(on) VGS(th) VDS=VGS, ID=250A gfs www..com IDSS IGSS Qg Qgs Qgd ID=18A nC VDS=160V VGS=10V See Fig.6 and 13 VDD=100V ID=18A nS RG=9.1 RD=5.4 See Figure 10 Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ See Figure 5 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25C,IS=18A,VGS=0V TJ=25C,IF=18A di/dt=100A/s td(on) tr td(off) tf LD LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Min. . . -- -- -- -- -- Typ. -- -- -- 300 3.4 -- 7.5 -- -- -- -- Units -- 1300 -- -- 430 130 Max. 18 Source-Drain Ratings and Characteristics Continuous Source Current (Body Diode) IS Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A 72 2.0 V nS C 610 7.1 ton Forward Turn-on Time Notes: Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) ISD18A,di/dt120A/S,VDDV(BR)DSS, TJ150 C Pulse width300S; duty cycle2%. Repetitive rating; pulse width limited by max. junction temperature(see figure 11) VDD=50V ,starting TJ=25 C ,L=4.6mH RG=25IAS=18A(see Figure 12) |
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