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| www..com BUL129D High Voltage Fast-Switching NPN Power Transistor Features PRELIMINARY DATA NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 1 2 3 Applications ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS TO-220 Description The device is manufactured using High Voltage Multi-Epitaxial Planar technology for high switching speeds while maintaining the wide RBSOA. The device is designed to be used in electronics transformers for halogen lamps. Internal Schematic Diagram Order Codes Part Number BUL129D Marking BUL129D Package TO-220 Packing TUBE December 2005 rev.1 1/7 www.st.com 7 www..com 1 Absolute Maximum Ratings BUL129D 1 Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ * Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature Value 800 450 9 4 8 2 4 65 -65 to 150 150 Unit V V V A A A A W oC oC Table 2. Symbol Rthj-case Rthj-amb Thermal Data Parameter Thermal Resistance Junction-Case__________________Max Thermal Resistance Junction-ambient _______________Max Value 1.92 62.5 Unit oC/W oC/W 2/7 www..com BUL129D 2 Electrical Characteristics 2 Table 3. Symbol ICES VEBO Electrical Characteristics Electrical Characteristics (Tcase = 25oC; unless otherwise specified) Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage (IC = 0) Test Conditions VCE = 800 V VCE = 800 V_ __Tj = 125 oC IE = 10 mA IC = 100 mA IC = 0.5 A __ IC = 1 A _____ IC = 2.5 A _ _ IC = 4 A VBE(sat) Note: 1 hFE Note: 1 ts tf Vf INDUCTIVE LOAD Storage Time Fall Time Diode Forward Voltage Base-Emitter Saturation Voltage __ IC = 0.5 A __ IC = 1 A _____ IC = 2 A ____ DC Current Gain IC = 10 mA___ IC = 4.5 A ___ L = 25 mH _ IB = 0.1 A IB = 0.2 A _ IB = 0.5 A _ IB = 1 A _ IB = 0.1 A IB = 0.2 A _ IB = 0.5 A VCE = 5 V VCE = 10 V 10 4 0.7 1.1 1.2 1.3 9 450 Min. Typ. Max. 100 500 Unit A A V V VCEO(SUS) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) VCE(sat) Note: 1 Collector-Emitter Saturation Voltage 0.7 1 1.5 V V V V V V V IC = 2 A ____ _ Vclamp = 300 V IB1 = 0.4 A __ _ VBE(off) = -5 V RBB = 0 (see figure 2) IC = 2 A 0.75 0.1 1.6 0.2 1.5 s s V Note: 1 Pulsed duration = 300 s, duty cycle 1.5%. 3/7 www..com 3 Typical Characteristics and Test Circuits BUL129D 3 Figure 1. Typical Characteristics and Test Circuits Reverse Biased SOA Figure 2. Inductive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast Recovery Rectifier 4/7 www..com BUL129D 4 Package Mechanical Data 4 Package Mechanical Data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 5/7 www..com 5 Revision History BUL129D 5 Revision History Date 06-Dec-2005 Revision 1 Initial release. Changes 6/7 www..com BUL129D 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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