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| 16K Serial e eEEPROM with I2C bus DESCRIPTION 4U t om .c TECHNICAL DATA w w ta is a 16K bit Electrically Erasable PROM. The chip is organized as eight blocks of 256 x 8 bit a The IN24LC16B D memory with a 2-wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and . active currents of only 5 A and 1 mA respectively. The IN24LC16B also has a page-write capability for up to 16 w of data. bytes FEATURES Sh IN24LC16B * Single supply with operation down to 2.5V * Low power CMOS technology - 1 mA active current typical - 10 A standby current typical at 5.5V - 5 A standby current typical at 3.0V * Organized as 8 blocks of 256 bytes (8 x 256 x 8) * 2-wire serial interface bus, I2C compatible * Schmitt trigger inputs for noise suppression * Output slope control to eliminate ground bounce * 100 kHz (E-temp) and 400 kHz (C/I-temp) compatibility * Self-timed write cycle (including auto-erase) * Page-write buffer for up to 16 bytes * 2 ms typical write cycle time for page-write * Hardware write protect for entire memory * Can be operated as a serial ROM * Data retention > 200 years * 1,000,000 erase/write cycles guaranteed * Temperature range -40oC to +85oC w w w t a .D S a e h U t4 e .c m o PACKAGE TA = -40 ... +85 C Figure 1. Representative Block Diagram w w w .D a aS t ee h 4U t om .c 1 IN24LC16B ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol VCC VI Ta Parameter Supply voltage Input voltage Storage temperature Ambient temperature min 0 -0.3 -65 -65 Value max 7.0 VCC+1V 150 125 Unit V V C C Maximum Ratings Symbol VCC IOL Parameter Supply voltage Low level output current Operating ambient temperature min 2.5 -40 Value max 5.5 3.0 85 Unit V mA C DC CHARACTERISTICS (Vcc = +2.5V to +5.5V Tamb = -40C to +85C) Symbol ICCS Parameter Standby current Mode of measurements Vcc = 3.0 Vcc = 5.5 V SDA=SCL= Vcc fSCL = 400 Vcc = 5.5 V fSCL = 400 Vcc = 5.5 V VIN = (0.1 - 5.5) V VUT = (0.1- 5.5) V V =5.0 B, f=1 MHz = 25 C V =5.0V, f=1 MHz = 25 C 0.05 Vcc IOL = 3.0 V = 2.5 V = 25 C cycles mA, 200 100000 0 V Value Min Max 30 100 1.0 3.0 -10 -10 10 10 10 10 0.4 years pcs V pF uA uA Unit IO(RD) IO(E/WR) ILI IL IN out VHYS VOL tS N(E/WR) Operating current (read mode) Operating current (erase/write mode) Input leakage current Output leakage current Input pin capacitance Output pin capacitance Hysteresis of Schmitt trigger inputs Low level output voltage Time of data storage Number of guaranteed ERASE/WRITE kHz kHz mA 2 IN24LC16B N SUFFIX PLASTIC DIP (MS - 001BA) A 8 5 B 1 4 Dimension, mm Symbol A B MIN 8.51 6.1 MAX 10.16 7.11 5.33 0.36 1.14 2.54 7.62 0 2.92 7.62 0.2 0.38 10 3.81 8.26 0.36 0.56 1.78 F L C D C -T- SEATING N G D 0.25 (0.010) M T K PLANE F G M H J H J K L M N NOTES: 1. Dimensions "A", "B" do not include mold flash or protrusions. Maximum mold flash or protrusions 0.25 mm (0.010) per side. D SUFFIX SOIC (MS - 012AA) Dimension, mm 5 A 8 Symbol A B P MIN 4.8 3.8 1.35 0.33 0.4 1.27 5.72 0 0.1 0.19 5.8 0.25 MAX 5 4 1.75 0.51 1.27 H B C 1 G 4 C R x 45 D F -TD 0.25 (0.010) M T C M K SEATING PLANE G J F M H J K M P R 8 0.25 0.25 6.2 0.5 NOTES: 1. Dimensions A and B do not include mold flash or protrusion. 2. Maximum mold flash or protrusion 0.15 mm (0.006) per side for A; for B 0.25 mm (0.010) per side. 3 |
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