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| www..com SUP/SUB85N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.0043 @ VGS = 10 V 0.007 @ VGS = 4.5 V ID (A)a 85a 85a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP85N03-04P DS S N-Channel MOSFET Top View SUB85N03-04P www..com ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85a 85a 240 75 280 166c 3.75 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71241 S-20120--Rev. B, 12-Mar-02 www.vishay.com (TO-263)d RthJA RthJC Symbol Limit 40 62.5 0.9 Unit Free Air (TO-220AB) _C/W C/W 1 www. .com www..com SUP/SUB85N03-04P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 0.0055 120 0.0035 0.0043 0.0065 0.008 0.007 S W 30 V 1 2 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Turn-Off Delay Fall Timeb Timeb Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V, f = 1 MHz 4500 1380 615 71 15 16 15 VDD = 15 V, RL = 0.18 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W 12 50 22 23 18 75 35 ns 90 nC pF www..com Qgs VDS = 15 V, VGS = 10 V, ID = 85 A Qgd td(on) tr td(off) tf Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM Qrr IF = 85 A, di/dt = 100 A/ms m IF = 85 A, VGS = 0 V 1.1 42 1.4 0.03 85 240 1.5 70 2.1 0.06 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71241 S-20120--Rev. B, 12-Mar-02 www. .com www..com SUP/SUB85N03-04P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 5V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 150 100 4V 100 TC = 125_C 50 25_C 50 2, 3 V 0 0 2 4 6 8 10 -55_C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 180 TC = -55_C r DS(on) - On-Resistance ( W ) 150 g fs - Transconductance (S) 25_C 120 0.006 0.008 On-Resistance vs. Drain Current VGS = 4.5 V www..com 125_C 0.004 0.002 90 VGS = 10 V 60 30 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 7000 6000 C - Capacitance (pF) 5000 4000 3000 2000 1000 Crss 0 0 6 12 18 24 30 0 0 20 40 Coss Ciss 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 15 V ID = 85 A 12 8 4 60 80 100 120 140 VDS - Drain-to-Source Voltage (V) Document Number: 71241 S-20120--Rev. B, 12-Mar-02 Qg - Total Gate Charge (nC) www.vishay.com 3 www. .com www..com SUP/SUB85N03-04P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 1.6 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.2 10 TJ = 150_C TJ = 25_C 0.8 0.4 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 45 Drain Source Breakdown vs. Junction Temperature 100 I Dav (a) www..com V (BR)DSS (V) IAV (A) @ TA = 25_C 40 ID = 250 mA IAV (A) @ TA = 150_C 35 30 10 1 0.1 0.00001 0.0001 0.001 0.01 0.1 1 25 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71241 S-20120--Rev. B, 12-Mar-02 www. .com www..com SUP/SUB85N03-04P New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 1000 Vishay Siliconix Safe Operating Area 80 100 I D - Drain Current (A) 60 I D - Drain Current (A) 10 ms 100 ms Limited by rDS(on) 1 ms 10 ms 100 ms dc 10 40 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 www..com Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (sec) Document Number: 71241 S-20120--Rev. B, 12-Mar-02 www.vishay.com 5 www. .com |
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