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SUP/SUB85N03-04P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.0043 @ VGS = 10 V 0.007 @ VGS = 4.5 V
ID (A)a
85a 85a
TO-220AB
D
TO-263
G DRAIN connected to TAB G GDS Top View SUP85N03-04P DS S N-Channel MOSFET
Top View SUB85N03-04P
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ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
30 "20 85a 85a 240 75 280 166c 3.75 -55 to 175
Unit
V
A
mJ W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71241 S-20120--Rev. B, 12-Mar-02 www.vishay.com (TO-263)d RthJA RthJC
Symbol
Limit
40 62.5 0.9
Unit
Free Air (TO-220AB)
_C/W C/W
1
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SUP/SUB85N03-04P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 0.0055 120 0.0035 0.0043 0.0065 0.008 0.007 S W 30 V 1 2 "100 1 50 250 A m mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Turn-Off Delay Fall Timeb Timeb Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V, f = 1 MHz 4500 1380 615 71 15 16 15 VDD = 15 V, RL = 0.18 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W 12 50 22 23 18 75 35 ns 90 nC pF
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Qgs VDS = 15 V, VGS = 10 V, ID = 85 A Qgd td(on) tr td(off) tf
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM Qrr IF = 85 A, di/dt = 100 A/ms m IF = 85 A, VGS = 0 V 1.1 42 1.4 0.03 85 240 1.5 70 2.1 0.06 A V ns A mC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing.
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Document Number: 71241 S-20120--Rev. B, 12-Mar-02
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SUP/SUB85N03-04P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10 thru 6 V 5V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250
Vishay Siliconix
Transfer Characteristics
150
150
100
4V
100 TC = 125_C 50 25_C
50 2, 3 V 0 0 2 4 6 8 10
-55_C 0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
180 TC = -55_C r DS(on) - On-Resistance ( W ) 150 g fs - Transconductance (S) 25_C 120 0.006 0.008
On-Resistance vs. Drain Current
VGS = 4.5 V
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125_C 0.004 0.002
90
VGS = 10 V
60
30
0 0 20 40 60 80 100
0.000 0 20 40 60 80 100 120
ID - Drain Current (A)
ID - Drain Current (A)
Capacitance
7000 6000 C - Capacitance (pF) 5000 4000 3000 2000 1000 Crss 0 0 6 12 18 24 30 0 0 20 40 Coss Ciss 20
Gate Charge
V GS - Gate-to-Source Voltage (V)
16
VDS = 15 V ID = 85 A
12
8
4
60
80
100
120
140
VDS - Drain-to-Source Voltage (V) Document Number: 71241 S-20120--Rev. B, 12-Mar-02
Qg - Total Gate Charge (nC) www.vishay.com
3
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SUP/SUB85N03-04P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 1.6 I S - Source Current (A) 100
Source-Drain Diode Forward Voltage
1.2
10
TJ = 150_C TJ = 25_C
0.8
0.4
0.0 -50
-25
0
25
50
75
100
125
150
175
1 0
0.3
0.6
0.9
1.2
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000 45
Drain Source Breakdown vs. Junction Temperature
100 I Dav (a)
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V (BR)DSS (V) IAV (A) @ TA = 25_C 40 ID = 250 mA IAV (A) @ TA = 150_C 35 30
10
1
0.1 0.00001 0.0001 0.001 0.01 0.1 1
25 -50
-25
0
25
50
75
100
125
150
175
tin (Sec)
TJ - Junction Temperature (_C)
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4
Document Number: 71241 S-20120--Rev. B, 12-Mar-02
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SUP/SUB85N03-04P
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
100 1000
Vishay Siliconix
Safe Operating Area
80 100 I D - Drain Current (A) 60 I D - Drain Current (A)
10 ms 100 ms Limited by rDS(on) 1 ms 10 ms 100 ms dc
10
40
20
1
TC = 25_C Single Pulse
0 0 25 50 75 100 125 150 175
0.1 0.1 1 10 100
TC - Ambient Temperature (_C)
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
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Single Pulse 0.01 10-5
10-4
10-3
10-2
10-1
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 71241 S-20120--Rev. B, 12-Mar-02
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5
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