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| Preliminary Preliminary Product Description Sirenza Microdevices NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Small Signal Gain vs. Frequency NGA-186 DC-6000 MHz, Cascadable GaAs HBT MMIC Amplifier 25 20 15 dB Product Features 12.0dB Gain, 14.7 dBm P1dB at 1950Mhz Cascadable 50 ohm: 1.2:1 VSWR Patented GaAs HBT Technology Operates from Single Supply Low Thermal Resistance Package Unconditionally Stable Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite U nits dB m Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz D C - 5000 MHz D C - 5000 MHz 2000 MHz 3.6 45 11.2 Min. Ty p. 14.6 14.7 14.9 32.9 31.7 31.1 12.4 12.0 11.8 5600 1.2:1 1.2:1 4.0 4.1 50 120 4.6 55 13.6 Max. 10 5 0 0 1 2 3 4 5 6 7 8 Frequency GHz S y mbol P 1dB P arameter Output P ower at 1dB C ompressi on OIP 3 Output Thi rd Order Intercept P oi nt dB m G S mall S i gnal Gai n dB MHz dB V mA C /W B andwi dth D etermi ned by Return Loss (<-10dB ) Input V S WR Output V S WR NF VD ID RTH, j-l Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead) Test Conditions: VS = 8 V RBIAS = 75 Ohms ID = 50 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101101 Rev D Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Key parameters, at typical operating frequencies: Ty pical Test Condition (ID = 50mA, unless otherwise noted) Parameter 25C Unit 500 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 12.5 32.6 14.7 30.1 16.5 12.4 32.9 14.6 29.9 16.5 12.0 31.7 14.7 27.6 16.4 11.8 31.1 14.9 25.3 16.4 dB dBm Tone spacing = 1 MHz, Pout per tone = 0dBm dBm dB dB dB dBm Tone spacing = 1 MHz, Pout per tone = 0dBm dBm dB dB dB dBm Tone spacing = 1 MHz, Pout per tone = 0dBm dBm dB dB dB dBm Tone spacing = 1 MHz, Pout per tone = 0dBm dBm dB dB Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 110 mA 6V +10 dBm +150C -40C to +85C +150C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101101 Rev D Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Electrical Specifications at Ta = 25C S21, ID =50mA, T=25C S12, ID =50mA, T=25C 25 20 15 dB dB 0 -5 -10 -15 -20 -25 -30 -35 10 5 0 0 1 2 3 4 5 6 7 8 Frequency GHz S11, ID =50mA, T=25C 0 1 2 3 4 5 6 7 8 Frequency GHz S22, ID =50mA, T=25C 0 -5 -10 dB 0 -5 -10 dB -15 -20 -25 -30 -35 0 1 2 3 4 5 6 7 8 Frequency GHz -15 -20 -25 -30 -35 0 1 2 3 4 5 6 7 8 Frequency GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101101 Rev D Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Basic Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 VS CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 4 NGA-186 3 CB RF out 2 R ecommended B ias R esistor Values for ID=50mA R BIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 6V 39 8V 75 10 V 120 12 V 160 VS RBIAS 1 uF 1000 pF Note: RBIAS provi des D C bi as stabi li ty over temperature. LC CD CB Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. N1 CB Part Identification Marking The part will be marked with an N1 designator on the top surface of the package. 3 Pin # 1 Function RF IN D escription RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. C onnecti on to ground. Use vi a holes for best performance to reduce lead i nductance as close to ground leads as possi ble. 2, 4 GND 4 N1 1 2 3 RF OUT/ RF output and bi as pi n. D C voltage i s BIAS present on thi s pi n, therefore a D C blocki ng capaci tor i s necessary for proper operati on. Caution: ESD sensitive Part Number Ordering Information Part N umber NGA-186 R eel Siz e 7" D ev ices/R eel 1000 Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101101 Rev D Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Dimensions in inches [millimeters] PCB Pad Layout Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. Nominal Package Dimensions 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101101 Rev D |
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