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Pacific Silicon Sensor Series 9 Data Sheet Part Description AD003B-9-TO5I Order # 06-087
www..com
ACTIVE AREA: 0.33 mm 2 (1.10 mm X 0.30 mm )
1.90 O0.45 3 PL
ANODE PIN 1 CATHODE PIN 2
O9.1
O6.35 O8.13
120 VIEWING ANGLE O5.08 PIN CIRCLE 3.2 13.2 MIN 3 PL CASE PIN 3
FRONTSIDE VIEW
BACKSIDE VIEW
H
FEATURES
* * * * 1.10 mm X 0.30 mm active area Low slope multiplication curve High speed, low noise NIR enhanced
DESCRIPTION
0.33 mm High Speed, Low Noise Avalanche Photodiode with N on P construction. Hermetically packaged in a TO-5 with a clear borosilicate glass window cap.
2
APPLICATIONS
S
C
PLIANT OM
* High speed optical communications * Laser range finder * Medical equipment * High speed photometry
ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER MIN
TSTG TOP TSOLDERING Storage Temp Operating Temp Soldering Temp 10 seconds Electrical Power Dissipation @ 22C Optical Peak Value, once for 1 second Continuous Optical Operation Pulsed Signal Input
50 s "on" / 1 ms "off"
SPECTRAL RESPONSE at M = 100 MAX
+100 +70 +260
UNITS
C C
RESPONSIVITY (A/W)
70 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 1100
-60 -20
C mW mW A mA
-
100 200 250 1
IPH (DC) IPH (AC)
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS @ 22 C SYMBOL CHARACTERISTIC TEST CONDITIONS
ID C VBR
MIN
TYP
MAX
Ro
UNITS
Dark Current M = 100* --2.0 6.0 nA Capacitance M = 100* --2.0 --pF Breakdown Voltage ID = 2 A 120 200 --V Temperature Coefficient of VBR --1.55 --V/K --55 60 A/W Responsivity M = 100; = 0 V; = 905 nm Bandwidth -3dB --0.35 --GHz 3dB Rise Time M = 100 --1.0 --ns tr Optimum Gain 50 60 ------"Excess Noise" factor M = 100 2.5 ----"Excess Noise" index M = 100 0.2 1/2 ----Noise Current M = 100 0.75 pA/Hz --Max Gain 200 ---14 1/2 ----NEP Noise Equivalent Power 3.0 X 10 M = 100; = 905 nm W/Hz * Measurement conditions: Setup of photo current 10 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo current up to 1 A, (M = 100) by internal multiplication due to an increasing bias voltage.
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
12/22/2009
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TYPICAL GAIN vs BIAS VOLTAGE
10000
QUANTUM EFFICIENCY for M = 100
1.00 0.90 0.80 0.70 0.60
1000
GAIN
100
QE
10 30 50 70 90 110 130 150 170 190 210 230 250
0.50 0.40 0.30 0.20 0.10 0.00 400 500 600 700 800 900 1000 1100
10
1
BIAS VOLTAGE (V)
WAVELENGTH (nm)
DEVICE SCHEMATIC
SUGGESTED CIRCUIT SCHEMATIC
BIAS SUPPLY VOLTAGE
PIN 2 PIN 3 PIN 1
APD
CURRENT LIMITING RESISTOR
MIN. 0.1 F CAPACITOR CLOSEST TO APD
DIODE, PROTECTIVE CIRCUIT
READ-OUT CIRCUIT OR 50 Ohm LOAD RESISTANCE
APPLICATION NOTES
* Current should be limited by a protecting resistor or current limiting IC inside the power supply. * Use of low noise read-out IC. * For high gain applications (M>50) bias voltage should be temperature compensated. * For low light level applications, blocking of ambient light should be used.
HANDLING PRECAUTIONS:
* Soldering temperature - 260C for 10 seconds max. The device must be protected against solder flux vapor. * Minimum pin length - 2 mm * ESD protection - Standard precautionary measures are sufficient. * Storage - Store devices in conductive foam. * Avoid skin contact with window. * Clean window with Ethyl alcohol if necessary. * Do not scratch or abrade window.
USA:
Pacific Silicon Sensor, Inc. 5700 Corsa Avenue, #105 Westlake Village, CA 91362 USA Phone (818) 706-3400 Fax (818) 889-7053 Email: sales@pacific-sensor.com www.pacific-sensor.com
Proud Members of the Silicon Sensor International AG Group of companies
International sales:
Silicon Sensor International AG Wilhelminenhofstrasse 76-77 D-12459 Berlin, Germany Phone +49 (0)30-63 99 23 10 Fax +49 (0)30-63 99 23 33 Email: sales@silicon-sensor.de www.silicon-sensor.de
12/22/2009
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