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M02013
CMOS Transimpedance Amplifier with AGC Intended for Fiber-optic Networks up to 3.2 Gbps Data Sheet
Preliminary Information
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Inc, Proprietary and Confidential
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC TABLE OF CONTENTS
Features ...........................................................................................................................................................3 Applications ......................................................................................................................................................3 Connections ......................................................................................................................................................3 Description ........................................................................................................................................................3 Table 1 Ordering Information ............................................................................................................................3 Top Level Diagram ...........................................................................................................................................3 Table 2 Pad Description ...................................................................................................................................4 Table 3 Absolute Maximum Ratings..................................................................................................................4 Table 4 Recommended Operating Conditions .................................................................................................4 Table 5 DC Characteristics ...............................................................................................................................5 Table 6 AC Characteristics ...............................................................................................................................5 Table 7 Dynamic Characteristics ......................................................................................................................5 Typical Performance Diagrams .........................................................................................................................6 Functional Diagram ..........................................................................................................................................9 Functional Description ......................................................................................................................................9 TIA ....................................................................................................................................................................9 AGC ..................................................................................................................................................................9 Output Stage ....................................................................................................................................................10 Monitor O/P .......................................................................................................................................................10 Suggested PIN Diode Connection Methods Diagram .......................................................................................10 Typical Application Diagram ..............................................................................................................................11 TO-Can Assembly Diagram...............................................................................................................................12 Bare Die Information .........................................................................................................................................13 Bare Die Layout ................................................................................................................................................13 Disclaimer .........................................................................................................................................................14 Contact Information ..........................................................................................................................................15
Preliminary Information
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 2 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC FEATURES
Typical -23 dBm sensitivity, +3 dBm saturation at 3.2 Gbps (-24 dBm at 2.5 Gbps) when used with 0.9 A/W InGaAs PINs. (Cpd 0.5 pF BER 10-10) Typical differential transimpedance: 10 k Fabricated in CMOS Differential output Operates with standard +3.3 Volt supply Available as die only Monitor Output AGC provides dynamic range of more than 25 dBm
DESCRIPTION
The M02013 is a transimpedance amplifier (TIA) with AGC manufactured in a sub-micron, CMOS process. The AGC allows more than 25 dBm of dynamic range, providing a low-cost solution for longer-reach 3.2 Gbps ATM/SONET systems. For optimum system performance, the M02013 die should be mounted with a silicon or InGaAs PIN photodetector inside a lensed TO-Can or other optical sub-assembly. The M02013 reverse biases the PIN by approximately 1.8 volts to optimise performance. A replica of the average photodiode current is available at the MON pad for alignment and 'LOSS of SIGNAL' monitoring.
APPLICATIONS
ATM/SDH/SONET 2x Fiber Channel
TABLE 1
Part M02013-XX * M02013-XX *
ORDERING INFORMATION
Pin Package Waffle Pack Expanded whole wafer on a ring
Preliminary Information
* For full ordering number please contact sales
TOP LEVEL DIAGRAM CONNECTIONS
Fig. 1
2 VCC 3 PINK 1 AGC 12 DOUT 11 DOUTGND GND 10
Fig. 2
PINK MON VCC
DOUT PINA DOUTB
4
PINA VCC 5 MON 6 DOUT 7 DOUTGND 8
GND 9
AGC
GND
Die size 1090 x 880 m
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 3 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC TABLE 2
Die Pad No 1 2 3 4 5 6 7 8 9 10 11 12 NA Name AGC VCC PINK PINA VCC MON DOUT DOUTGND GND GND DOUTGND DOUT Backside Function Monitor or force AGC voltage. Enable self test oscillator when VAGC >VCC+1.2 Power pin. Connect to most positive supply AC common PIN input. Connect photo diode cathode here and a 470 pF capacitor to Gnd (1) Active PIN input. Connect photo diode anode here Power pin. Connect to most positive supply (only one VCC pad needs to be connected) Analog current sink output. Current matched to average photodiode current Differential data output (goes low as light increases) Ground return for DOUT pad (all GND pads must be connected) Ground pin. Connect to the most negative supply (all GND pads must be connected) Ground pin. Connect to the most negative supply (all GND pads must be connected) Ground return for DOUT pad (all GND pads must be connected) Differential data output (goes high as light increases) Backside. Connect to the lowest potential, usually ground
PAD DESCRIPTION
Preliminary Information
Note: (1) Alternatively the photodiode cathode may be connected to a decoupled positive supply e.g. VCC.
TABLE 3
Symbol VCC TA TSTG Power supply (VCC-GND) Operating ambient Storage temperature Parameter
ABSOLUTE MAXIMUM RATINGS
Rating 4 -40 to +85 -65 to +150 Units V C C
TABLE 4
Symbol VCC CPD TA Power supply (VCC-GND) Parameter
RECOMMENDED OPERATING CONDITIONS
Rating 3.3 10% 0.5 -40 to +85 Units V pF C
Max. Photodiode capacitance (Vr = 1.8 V), for 3.2 Gbps data rate Operating ambient temperature
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 4 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC TABLE 5
Symbol VB VCM VOL and VOH ICC RLOAD Parameter Photodiode bias voltage (PINK - PINA) Common mode output voltage Output voltage swing Supply current (no loads) Recommended differential output loading Min. 1.6 0.7 .45 31 85 Typ. 1.8 1 1 42 100 (1)
DC CHARACTERISTICS
Max. 2 1.3 1.55 58 Units V V V mA
NOTE (1) 100 is the load presented by the input of the Mindspeed M02049 limiting amplifier.
TABLE 6
Symbol ROUT
LFC
AC CHARACTERISTICS
Parameter Output impedance (single ended) Low frequency cutoff Differential output voltage Duty cycle distortion Deterministic jitter (includes DCD) Total input RMS noise, DC to 2.3 GHz, Cin = 0.5 pF Example dynamic range of optical input 3 Optical Sensitivity 3 at 3.2 Gbps Optical Sensitivity 3 at 2.5 Gbps Min. 25 -22 Typ. (2) 40 50 275 475 -23 -24 Max. 60 80 500 20 35 600 +3 Units
Preliminary Information
KHz mV ps ps, p-p nA dBm dBm dBm
VD DCD DJ In, rms Pin PIN (mean), min PIN (mean), min
NOTE (2) Die designed to operate over an ambient temperature range of -40 C to +85 C, TA and VCC range from 3.0 - 3.6V. Typical values are tested at TA = 25 C and Vcc = 3.3V. NOTE (3) BER 10-10, PD capacitance = 0.5 pF, Responsivity 0.9 A/W, Extinction Ratio = 10.
TABLE 7
Symbol G BW RC IAGC PSRR Transimpedance - Single ended - Differential Bandwidth to -3 dB point @ -22 dBm, 0.9A/W, 0.5 pF PD AGC loop time constant AGC threshold Power supply rejection, f < 4 MHz Parameter Min. 3.5 7 2.0 30 20
DYNAMIC CHARACTERISTICS
Typ. 5 10 2.4 2 Max. 7 14 Units GHz s A, p-p 28 dB
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 5 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC TYPICAL PERFORMANCE
Fig. 3.
Transimpedance vs Iin
100000 Transimpedance (ohms)
10000
1000
100 1 10 100 1000 Input Current (uA p-p)
Preliminary Information
Transimpedance vs. Vagc
Transimpedance (Ohms) 100000 10000 1000 100 10 1 0 0.5 1 Vagc (V) 1.5 2
Bandw idth vs . Te m pe rat ure
Bandw idth (G Hz)
3.1 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 - 40 10 60 110 J unction Te m pe rat ure (C)
CIN = 0.3pF CIN = 0.5pF CIN = 0.85pF CIN = 1.0pF
Note: Vcc = 3.3V, Temperature = 25 C, Lin = 1 nH, unless otherwise stated, TIA gain is differential.
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 6 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC TYPICAL PERFORMANCE (CONT.)
Fig. 3 (cont.)
Bandwidth vs. Input Capacitance
3 Bandwidth (GHz) 2.5 2 1.5 1 0.3 0.7 CIN (pF) 1.1 1.5
T = -40C T = 0C T = 27C T = 85C T = 110 C
Preliminary Information
Frequency Response CIN = 0.7pF
Transimpedance (Ohms)
9200 7200 5200 3200 100
1000 Frequency (MHz)
10000
Monitor Current vs. Average Input Current 10000 Monitor Current (A) 1000 100 10 1 1 10 100 1000 10000 Average Input current (A)
Note: Vcc = 3.3V, Temperature = 25 C, Lin = 1 nH, unless otherwise stated, TIA gain is differential.
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 7 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC TYPICAL PERFORMANCE (CONT.)
Fig. 3 (cont.)
Input-Referred Noise vs. Temperature
rms )
500 480 460 440 420 -40 10 60 110 CIN = 1.0pF CIN = 0.85pF CIN = 0.5pF CIN = 0.3pF
Input Noise (nA
Junction Temperature (C)
Preliminary Information
Deterministic Jitter vs Iin
20 Jitter (ps p-p) 15 10 5 0 0.001
0.01
0.1
1
10
Input Current (mA)
Icc vs. Temperature
44 43 Icc (mA) 42 41 40 -40 V cc = 3.6V V cc = 3.3V V cc = 3.0V
10
60
110
Junction Te m perature (C)
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 8 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC FUNCTIONAL DIAGRAM
Fig. 4
MON
PINK 2.6 V
DC Restore
DOUT PINA 2.5 k Phase Splitter DC Shift DOUT
1V B.I.S.T. EN
Preliminary Information
AGC
FUNCTIONAL DESCRIPTION TIA (Transimpedance Amplifier)
The transimpedance amplifier consists of a high gain single-ended CMOS amplifier (TIA), with a feedback resistor. The feedback creates a virtual earth low impedance at the input and virtually all of the input current passes through the feedback resistor, defining the voltage at the output. Advanced CMOS design techniques are employed to maintain the stability of this stage across all input conditions. Single-ended amplifiers have inherently poor power supply noise rejection. For this reason, an on-chip low dropout linear regulator has been incorporated into the design to give excellent noise rejection up to several MHz. Higher frequency power supply noise is removed by the external 470 pF decoupling capacitor connected to PINK. The circuit is designed for PIN photodiodes in the "grounded cathode" configuration, with the anode connected to the input of the TIA and the cathode connected to AC ground, such as the provided PINK terminal. Reverse DC bias is applied to reduce the photodiode capacitance. Avalanche photodiodes can be connected externally to a higher voltage.
AGC
The M02013 has been designed to operate over the input range of +3 dBm to -23 dBm @ 3.2 Gbps and -24 dBm @ 2.5 Gbps. This represents a ratio of 1:300, whereas the acceptable dynamic range of the output is only 1:30 which implies a compression of 10:1 in the transimpedance. The design uses a MOS transistor operating in the triode region as a "voltage controlled resistor" to achieve the transimpedance variation. Another feature of the AGC is that it only operates on signals greater than -17.5 dBm (@ 0.9 A/W). This knee in the gain response is important when setting "signal detect" functions in the following post amplifier. It also aids in active photodiode alignment. The AGC pad allows the AGC to be disabled during photodiode alignment by grounding the pad through a low impedance. The AGC control voltage can be monitored during normal operation at this pad by a high impedance (>10 M) circuit. In addition, taking this pad to VCC +1.2 V enables an internal test oscillator which supplies a 1 MHz 10 App (approximate) square wave current internally into the PINA pad to emulate a photodiode for test purposes.
Page 9 of 15
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC FUNCTIONAL DESCRIPTION Output Stage
The signal from the TIA enters a phase splitter followed by a DC-shift stage and a pair of voltage follower outputs. These are designed to drive a differential (100 ) load. They are stable for driving capacitive loads, such as interstage filters. Each output has its own GND pad, all four GND pads on the chip should be connected for proper operation. Since the M02013 exhibits rapid roll-off (3 pole), simple external filtering is sufficient.
Monitor O/P
High impedance O/P sinks replicate average photodiode current for monitoring purposes.
SUGGESTED PIN DIODE CONNECTION METHODS
Fig. 5
Vcc 1 nf
Preliminary Information
470 pf
Rm Monitor output PINK DOUTB
PINA DOUT
Recommended Circuit
Vcc
1 nf 470 pf
500 ohm
Rm Monitor output DOUTB
PINK
Alternative Circuit (Cathode Connected to Vcc)
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
C
470 pf PINA
DOUT
Page 10 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC TYPICAL APPLICATION DIAGRAM
Fig. 6
DOUT
DOUTB
1nF
VCC
470pF
MON
Preliminary Information
Notes: Typical application inside of a five lead TO-Can. Only one of the VCC pads and all of the GND pads need to be connected. The backside must be connected to the lowest potential, usually ground, with conductive epoxy or a similar die attach material.
Assembly
The M02013 is designed to work with a wirebond inductance of 1 nh +/- 0.25 nh. Many existing TO-Can configurations will not allow wirebond lengths that short, since the PIN diode submount and the TIA die are more than 1 mm away in the vertical direction, due to the need to have the PIN diode in the correct focal plane. This can be remediated by raising up the TIA die with a conductive metal shim. This will effectively reduce the bond wire length. Refer to Figure 5 on the following page for details. Mindspeed recommends ball bonding with a 1 mil (24.4 m) gold wire.
02013-DSH-001-D 4/04
In addition, please refer to the Mindspeed Product Bulletin (document number 0201X-PBD-001). Care must be taken when selecting chip capacitors, since they must have good low ESR characteristics up to 1.6 Ghz. It is also important that the termination materials of the capacitor be compatible with the attach method used. For example, Tin/Lead (Pb/Sn) solder finish capacitors are incompatible with silver-filled epoxies. Palladium/ Silver (Pd/Ag) terminations are compatible with silver filled epoxies. Solder can be used only if the substrate thick-film inks are compatible with Pb/Sn solders.
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 11 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC TO-CAN ASSEMBLY DIAGRAM
Fig. 7
NOT Recommended Example
PIN Diode Capacitor Wire Bond
470 pF
M02013 Ceramic Shim Submount TO Can Leads (x 4or 5)
TO-CAN Header
Preliminary Information
Recommended Example
M02013 PIN Diode
Capacitor Wire Bond
470 pF
Metal Shim
Ceramic Shim Submount
TO Can Leads (x 4or 5)
TO-CAN Header
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 12 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC BARE DIE INFORMATION BARE DIE LAYOUT
Fig. 8
10 GND 11 DOUTGND GND
9
Pad Number 1 2
8
Pad AGC VCC PINK PINA VCC MON DOUT DOUTGND GND GND GND GND GND GND DOUTGND DOUT
X -76 -228 -434 -434 -228 -76 76 228 360 434 434 434 434 360 228 76
Y 329 329 124 -124 -329 -329 -329 -329 -329 -255 -124 124 255 329 329 329
DOUTGND
3 4 5 6 7 8 9c* 9b* 9a* 10a* 10b* 10c* 11 12
Preliminary Information
12
DOUT
DOUT
7
1
AGC
MON
6
2
VCC PINK 3 PINA 4
VCC
5
Notes:
Process technology: CMOS, Silicon Nitride passivation Die thickness: 300 m Pad metallization: Aluminum Die size: 1090 m x 880 m Pad opening: 86 msq Octagonal pad: 70 m across flat PINA (70 m x 70 m) Pad Centers in m referenced to center of device Backside bias to ground
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 13 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC
Preliminary Information
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 14 of 15
M02013
3.2 Gbps CMOS Transimpedance Amplifier with AGC DISCLAIMER
(c) 2002, 2003 Mindspeed TechnologiesTM, All Rights Reserved. Information in this document is provided in connection with Mindspeed Technologies. "Mindspeed" products. These materials are provided by Mindspeed as a service to its customers and may be used for informational purposes only. Mindspeed assumes no responsibility for errors or omissions in these materials. Mindspeed may make changes to specifications and product descriptions at any time, without notice. Mindspeed makes no commitment to update the information contained herein. Mindspeed shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Mindspeed Terms and Conditions of Sale for such products, Mindspeed assumes no liability whatsoever. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF CONEXANT PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Mindspeed further does not warrant the accuracy or completeness of the information, text, graphics or other items contained within these materials. Mindspeed shall not be liable for any special, indirect, incidental, or consequential damages, including without limitation, lost revenues or lost profits, which may result from the use of these materials. Mindspeed products are not intended for use in medical, life saving or life sustaining applications. Mindspeed customers using or selling Mindspeed products for use in such applications do so at their own risk and agree to fully indemnify Mindspeed for any damages resulting from such improper use or sale. The following are trademarks of Mindspeed Technologies,. the symbol M1, MindspeedTM, and "Build It FirstTM" Product names or services listed in this publication are for identification purposes only, and may be trademarks of third parties. Third-party brands and names are the property of their respective owners. Reader Response: Mindspeed Technologies, strives to produce quality documentation and welcomes your feedback. Please send comments and suggestions to mailto:tech.pubs@mindspeed.com. For technical questions, or to talk to a field applications engineer contact your local MindspeedTM sales office listed below. For literature send email request to literature@mindspeed.com.
Preliminary Information
02013-DSH-001-D 4/04
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
Page 15 of 15
Contact Information
Headquarters
Newport Beach
Mindspeed Technologies 4000 MacArthur Boulevard, East Tower Newport Beach, CA 92660 Phone: (949) 579-3000 Fax: (949) 579-3020
www.mindspeed.com
02013-DSH-001-C 9/03
Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed TechnologiesTM, Proprietary and Confidential
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