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SRAM
Austin Semiconductor, Inc. 128K x 8 SRAM
WITH CHIP & OUTPUT ENABLE
AVAILABLE AS MILITARY SPECIFICATIONS
*SMD 5962-89598 *MIL-STD-883
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
MT5C1009
PIN ASSIGNMENT (Top View)
32-Pin DIP (C, CW) 32-Pin SOJ (SOJ)
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 NC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS
32-Pin LCC (EC) 32-Pin SOJ (DCJ)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 NC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4
FEATURES
* * * * * * * Access Times: 15, 20, 25, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE\ and OE\ options. All inputs and outputs are TTL compatible
32-Pin LCC (ECA)
4 3 2 1 32 31 30
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 NC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4
OPTIONS
* Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access * Package(s)* Ceramic DIP (400 mil) Ceramic DIP (600 mil) Ceramic LCC Ceramic LCC Ceramic Flatpack Ceramic SOJ Ceramic SOJ * 2V data retention/low power
MARKING
-15 -20 -25 -35 -45 -55* -70*
A7 A6 A5 A4 A3 A2 A1 A0 DQ1
5 6 7 8 9 10 11 12 13
A12 A14 A10 6 NC VCC A15 CE2
NC
32-Pin Flat Pack (F)
29 28 27 26 25 24 23 22 21
WE \ A13 A8 A9 A11 OE \ A10 CE1\ DQ8
14 15 16 17 18 19 20
DQ2 DQ3 VSS DQ4 DQ5 DQ6 DQ7
GENERAL DESCRIPTION
C CW EC ECA F DCJ SOJ L No. 111 No. 112 No. 207 No. 208 No. 303 No. 501 No. 507 The MT5C1009 is a 1,048,576-bit high-speed CMOS static RAM organized as 131,072 words by 8 bits. This device uses 8 common input and output lines and has an output enable pin which operate faster than address access times during READ cycle. For design flexibility in high-speed memory applications, this device offers chip enable (CE\) and output enable (OE\) features. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The devices offer a reduced power standby mode when disabled, allowing system designs to achieve low standby power requirements. The "L" version offers a 2V data retention mode, reducing current consumption to 2mW maximum. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. It is particularly well suited for use in high-density, high-speed system applications.
*Electrical characteristics identical to those provided for the 45ns access devices.
For more products and information please visit our web site at www.austinsemiconductor.com
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM
VCC GND
MT5C1009
A0 A1 A2 A3 A4 A5 A6 A7 A12
ROW DECODER
DQ8
262,144-BIT MEMORY ARRAY
I/O CONTROL
DQ1
CE\ COLUMN DECODER OE\ WE\
A8 A9 A10 A11 A13 A14 A15 A16
POWER DOWN
NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.
TRUTH TABLE
CE\ H X L L L WE\ X X H H L OE\ X X H L X MODE Not Selected Not Selected Output Disable Read Write I/O PIN High-Z High-Z High-Z DOUT DIN SUPPLY CURRENT ISBT2, ISBC2 ISBT2, ISBC2 ICC ICC ICC
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS* Supply Voltage Range (Vcc).............................-0.5V to +6.0V Storage Temperature......................................-65C to +150C Short Circuit Output Current (per I/O)..........................20mA Voltage on any Pin Relative to Vss..................-0.5V to +7.0V Max Junction Temperature**.......................................+150C Power Dissipation ...............................................................1 W
MT5C1009
*Stresses at or greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods will affect reliability. Refer to page 17 of this datasheet for a technical note on this subject. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage 0VPARAMETER Power Supply Current: Operating
CONDITIONS CE\ < VIL; OE\ = WE\ = VIH, VCC = MAX, f = MAX = 1/tRC (MIN) Output Open
(1)
SYM ICCSP ICCLP
-15 250 250
-20 140 140
MAX -25 -35 140 130 135 125
-45 125 115
UNITS NOTES mA mA 3
L version only
Power Supply Current: Standby
CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz CE\ > VCC -0.2V; VCC = MAX Inputs = VIH or VIL f = 0 Hz
ISBT
25
25
25
25
25
mA
ISBCSP ISBCLP
10 10
10 10
10 10
10 10
10 10
mA mA
CAPACITANCE
DESCRIPTION Input Capacitance (A0-A16) Output Capacitance Input Capacitance (CE\, WE\, OE\)
MT5C1009 Rev. 5.5 8/01
CONDITIONS TA = 25 C, f = 1MHz VCC = 5V
o
SYM CI CO CI
MAX 12 20 14
UNITS pF pF pF
NOTES 4 4 4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
MT5C1009
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC & -40oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width (OE High) Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z
-15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE tHZOE tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE 15 15 15 3 3 7 7 0 7 15 12 12 0 0 12 8 0 5 7 20 12 12 0 0 12 10 0 5 9 0 6 25 20 20 0 0 20 15 0 5 10 3 3 8 6 0 10 35 25 25 0 0 25 20 0 5 15 20 20 20 3 3 10 10 0 15 45 35 35 0 0 35 20 0 5 20 25 25 25 3 3 15 15 0 20 35 35 35 3 3 20 20 45 45 45 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7
4, 6, 7 4, 6, 7
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
+5V AC TEST CONDITIONS
Input pulse levels ................................... Vss to 3.0V Input rise and fall times ....................................... 5ns Input timing reference levels ............................. 1.5V Output reference levels ..................................... 1.5V Output load .............................. See Figures 1 and 2
MT5C1009
+5V 480 480 Q 255 5 pF
Q 255 30
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
NOTES
1. 2. 3. All voltages referenced to VSS (GND). -2V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 200mV typical from steady state voltage, allowing for actual tester RC time constant.
7.
4. 5. 6.
At any given temperature and voltage condition, t HZCE is less than tLZCE, and tHZWE is less than t LZWE and tHZOE is less than tLZOE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION VCC for Retention Data Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time
* Low Power, -20 device only
CONDITIONS CE\ > (VCC - 0.2V) VIN > (VCC - 0.2V) or < 0.2V VCC = 2V
SYMBOL VDR ICCDR1* ICCDR2 tCDR tR
MIN 2
MAX --0.75 1.0
UNITS NOTES V mA mA ns ns 4 4, 11
0 tRC
---
LOW Vcc DATA RETENTION WAVEFORM
VCC
t CDR DATA RETENTION MODE 4.5V VDR > 2V 4.5V tR VDR
CE1\
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
4321 4321 4321 4321
VIH VIL
321 321 321 321
3216 87 4326 321654321 87 432154321 321154321 87 421154321 321154321 87 3326 4326 87
987654321 321 987654321 4321 987654321 987654321 4321 321 987654321
DON'T CARE UNDEFINED
SRAM
Austin Semiconductor, Inc.
MT5C1009
READ CYCLE NO. 1 8, 9
tRC tRC
ADDRESS
tAA tAA tOH tOH
VALID
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10, 12
t RC tRC
CE\
tAOE tAOE t HZOE tHZOE
tLZOE OE\
tLZCE tLZCE tACE tACE
DATA VALID
t LZOE
tHZCE tHZCE
DQ
t PU tPU
t PD
tPD
Icc
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12, 13 (Chip Enabled Controlled)
t WC tWC
MT5C1009
ADDRESS
t AW tAW tAH tAH
tAS CE\
t AS
t CW tCW t WP1 tWP1
WE\
t DS tDS tDH tDH
D Q
DATA VAILD
HIGH Z
WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled)
t WC
tWC
ADDRESS
t AW tAW tAH tAH
tCW CE\
t AS tAS t WP1 tWP1
t CW
WE\
tDH tDH
D Q
HIGH-Z
DATA VALID
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #111 (Package Designator C) SMD 5962-89598, Case Outline Z
MT5C1009
S1
D
S2 A Q Pin 1 b b1 E L1 L
S
e
NOTE
0o to 15o
c E1
SYMBOL A b b1 c D E E1 e L L1 Q S S1 S2 NOTE:
SMD SPECIFICATIONS MIN MAX --0.232 0.014 0.023 0.038 0.065 0.008 0.015 --1.700 0.350 0.405 0.390 0.420 0.100 BSC 0.125 0.200 0.150 --0.015 0.060 --0.100 0.005 --0.005 --Either configuration in detail A is allowed on SMD.
*All measurements are in inches.
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #112 (Package Designator CW) SMD 5962-89598, Case Outline X
MT5C1009
D A
Q L
b Pin 1 e b2
E
C eA
SMD Specifications SYMBOL A b b2 C D E eA e Q L MIN 0.089 0.016 0.045 0.009 1.585 0.585 0.600 BSC 0.100 BSC 0.040 0.125 0.060 0.175 MAX 0.111 0.020 0.050 0.011 1.615 0.605
*All measurements are in inches.
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #207 (Package Designator EC) SMD 5962-89598, Case Outline U
See Detail A
MT5C1009
A
L1
D
L e
b
h x 45o
E
Detail A
L2 b1 b2
SYMBOL A b b1 b2 D E e h L L1 L2
SMD SPECIFICATIONS MIN MAX 0.080 0.100 0.022 0.028 0.006 0.022 0.040 --0.800 0.840 0.392 0.408 0.050 BSC 0.012 REF 0.070 0.080 0.090 0.110 0.003 0.015
*All measurements are in inches.
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECA) SMD 5962-89598, Case Outline M
MT5C1009
D1
A L1
e E E1 See Detail A
D
L
Detail A
b1
B1
b2
SYMBOL A B1 b1 b2 D D1 E E1 e L L1
SMD SPECIFICATIONS MIN MAX 0.060 0.080 0.022 0.028 0.004 0.014 0.040 0.050 0.442 0.458 0.300 BSC 0.540 0.560 0.400 BSC 0.050 BSC 0.045 0.055 0.075 0.095
*All measurements are in inches.
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #303 (Package Designator F) SMD 5962-89598, Case Outline T
L E
MT5C1009
Pin 1 Index e 32 1
b
D
17
16
S1 E1
S
Bottom View
Top View
c Q E2 E3 A
SYMBOL A b c D E E1 E2 E3 e L Q S S1
SMD SPECIFICATIONS MIN MAX 0.097 0.125 0.015 0.019 0.003 0.009 --0.830 0.400 0.420 --0.450 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 --0.045 0.000 ---
*All measurements are in inches.
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #501 (Package Designator DCJ) SMD 5962-89598, Case Outline 7
A
MT5C1009
e
D D1
B1 b
E2 E1
E A2
SYMBOL A A2 B1 b D D1 E E1 E2 e
SMD SPECIFICATIONS MIN MAX 0.135 0.144 0.026 0.036 0.030 0.040 0.015 0.019 0.812 0.828 0.740 0.755 0.405 0.415 0.435 0.445 0.360 0.380 0.050 BSC
*All measurements are in inches.
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #507 (Package Designator SOJ) SMD 5962-89598, Case Outline Y
j
32 1
MT5C1009
See Detail A
A1
D1 B2 D
e
17 S A E E1
16
SYMBOL A A1 A2 B B1 B2 B3 D D1 E E1 E2 e e1 e2 j S S1
*All measurements are in inches.
MT5C1009 Rev. 5.5 8/01
SMD SPECIFICATIONS MIN MAX 0.120 0.165 0.088 0.120 0.070 REF 0.010 REF .030R TYP 0.020 REF 0.025 0.045 0.816 0.838 0.75 REF 0.419 0.431 0.430 0.445 0.360 0.380 0.050 BSC 0.038 TYP 0.005 0.005 TYP 0.030 0.040 0.020 TYP
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
5432109876543210987654321 5432109876543210987654321 5432109876543210987654321 5432109876543210987654321 5432109876543210987654321
B B1 E2
e2 e1
Base Plane B3 Seating Plane A2
Detail A
32121 1 3 32121 32321 3
S1
SRAM
Austin Semiconductor, Inc. ORDERING INFORMATION
EXAMPLE: MT5C1009C-25/XT Device Package Speed Options** Process Number Type ns MT5C1009 C -15 L /* MT5C1009 CW -15 L /* MT5C1009 C -20 L /* MT5C1009 CW -20 L /* MT5C1009 C -25 L /* MT5C1009 CW -25 L /* MT5C1009 C -35 L /* MT5C1009 CW -35 L /* MT5C1009 C -45 L /* MT5C1009 CW -45 L /* MT5C1009 C -55 L /* MT5C1009 CW -55 L /* MT5C1009 C -70 L /* MT5C1009 CW -70 L /* EXAMPLE: MT5C1009F-70L/883C Device Package Speed Options** Process ns Number Type MT5C1009 MT5C1009 MT5C1009 MT5C1009 MT5C1009 MT5C1009 MT5C1009 F F F F F F F -15 -20 -25 -35 -45 -55 -70 L L L L L L L /* /* /* /* /* /* /* EXAMPLE: MT5C1009EC-45L/IT Device Package Speed Options** Process Number Type ns MT5C1009 EC -15 L /* MT5C1009 ECA -15 L /* MT5C1009 EC -20 L /* MT5C1009 ECA -20 L /* MT5C1009 EC -25 L /* MT5C1009 ECA -25 L /* MT5C1009 EC -35 L /* MT5C1009 ECA -35 L /* MT5C1009 EC -45 L /* MT5C1009 ECA -45 L /* MT5C1009 EC -55 L /* MT5C1009 ECA -55 L /* MT5C1009 EC -70 L /* MT5C1009 ECA -70 L /* EXAMPLE: MT5C1009DCJ-35/883C Device Package Speed Options** Process Number Type ns MT5C1009 DCJ -15 L /* MT5C1009 SOJ -15 L /* MT5C1009 DCJ -20 L /* MT5C1009 SOJ -20 L /* MT5C1009 DCJ -25 L /* MT5C1009 SOJ -25 L /* MT5C1009 DCJ -35 L /* MT5C1009 SOJ -35 L /* MT5C1009 DCJ -45 L /* MT5C1009 SOJ -45 L /* MT5C1009 DCJ -55 L /* MT5C1009 SOJ -55 L /* MT5C1009 DCJ -70 L /* MT5C1009 SOJ -70 L /*
MT5C1009
*AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V data retention, low power standby
MT5C1009 Rev. 5.5 8/01
-40oC to +85oC -55oC to +125oC -55oC to +125oC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
SRAM
Austin Semiconductor, Inc.
ASI Package Designator C & CW
ASI Part #
MT5C1009C-20/883C MT5C1009C-20L/883C MT5C1009C-25L/883C MT5C1009C-25/883C MT5C1009C-35L/883C MT5C1009C-35/883C MT5C1009C-45L/883C MT5C1009C-45/883C MT5C1009C-55L/883C MT5C1009C-55/883C MT5C1009C-70L/883C MT5C1009C-70/883C MT5C1009CW-20/883C MT5C1009CW-20L/883C MT5C1009CW-25L/883C MT5C1009CW-25/883C MT5C1009CW-35L/883C MT5C1009CW-35/883C MT5C1009CW-45L/883C MT5C1009CW-45/883C MT5C1009CW-55L/883C MT5C1009CW-55/883C MT5C1009CW-70L/883C MT5C1009CW-70/883C
MT5C1009
ASI TO DSCC PART NUMBER CROSS REFERENCE
ASI Package Designator EC & ECA
ASI Part #
MT5C1009EC-20/883C MT5C1009EC-20L/883C MT5C1009EC-25L/883C MT5C1009EC-25/883C MT5C1009EC-35L/883C MT5C1009EC-35/883C MT5C1009EC-45L/883C MT5C1009EC-45/883C MT5C1009EC-55L/883C MT5C1009EC-55/883C MT5C1009EC-70L/883C MT5C1009EC-70/883C MT5C1009ECA-20/883C MT5C1009ECA-20L/883C MT5C1009ECA-25L/883C MT5C1009ECA-25/883C MT5C1009ECA-35L/883C MT5C1009ECA-35/883C MT5C1009ECA-45L/883C MT5C1009ECA-45/883C MT5C1009ECA-55L/883C MT5C1009ECA-55/883C MT5C1009ECA-70L/883C MT5C1009ECA-70/883C
SMD Part #
5962-8959839MZA 5962-8959840MZA 5962-8959812MZA 5962-8959829MZA 5962-8959811MZA 5962-8959828MZA 5962-8959810MZA 5962-8959827MZA 5962-8959809MZA 5962-8959826MZA 5962-8959808MZA 5962-8959825MZA 5962-8959839MXA 5962-8959840MXA 5962-8959812MXA 5962-8959829MXA 5962-8959811MXA 5962-8959828MXA 5962-8959810MXA 5962-8959827MXA 5962-8959809MXA 5962-8959826MXA 5962-8959808MXA 5962-8959825MXA
SMD Part #
5962-8959839MUA 5962-8959840MUA 5962-8959812MUA 5962-8959829MUA 5962-8959811MUA 5962-8959828MUA 5962-8959810MUA 5962-8959827MUA 5962-8959809MUA 5962-8959826MUA 5962-8959808MUA 5962-8959825MUA 5962-8959839MMA 5962-8959840MMA 5962-8959812MMA 5962-8959829MMA 5962-8959811MMA 5962-8959828MMA 5962-8959810MMA 5962-8959827MMA 5962-8959809MMA 5962-8959826MMA 5962-8959808MMA 5962-8959825MMA
ASI Package Designator F
ASI Part #
MT5C1009F-20/883C MT5C1009F-20L/883C MT5C1009F-25L/883C MT5C1009F-25/883C MT5C1009F-35L/883C MT5C1009F-35/883C MT5C1009F-45L/883C MT5C1009F-45/883C MT5C1009F-55L/883C MT5C1009F-55/883C MT5C1009F-70L/883C MT5C1009F-70/883C
ASI Package Designator DCJ
ASI Part #
MT5C1009DCJ-20/883C MT5C1009DCJ-20L/883C MT5C1009DCJ-25L/883C MT5C1009DCJ-25/883C MT5C1009DCJ-35L/883C MT5C1009DCJ-35/883C MT5C1009DCJ-45L/883C MT5C1009DCJ-45/883C MT5C1009DCJ-55L/883C MT5C1009DCJ-55/883C MT5C1009DCJ-70L/883C MT5C1009DCJ-70/883C
SMD Part #
5962-8959839MTA 5962-8959840MTA 5962-8959812MTA 5962-8959829MTA 5962-8959811MTA 5962-8959828MTA 5962-8959810MTA 5962-8959827MTA 5962-8959809MTA 5962-8959826MTA 5962-8959808MTA 5962-8959825MTA
SMD Part #
5962-8959839M7A 5962-8959840M7A 5962-8959812M7A 5962-8959829M7A 5962-8959811M7A 5962-8959828M7A 5962-8959810M7A 5962-8959827M7A 5962-8959809M7A 5962-8959826M7A 5962-8959808M7A 5962-8959825M7A
ASI Package Designator SOJ
ASI Part #
MT5C1009SOJ-20/883C MT5C1009SOJ-20L/883C MT5C1009SOJ-25L/883C MT5C1009SOJ-25/883C MT5C1009SOJ-35L/883C MT5C1009SOJ-35/883C MT5C1009SOJ-45L/883C MT5C1009SOJ-45/883C MT5C1009SOJ-55L/883C MT5C1009SOJ-55/883C MT5C1009SOJ-70L/883C MT5C1009SOJ-70/883C
SMD Part #
5962-8959839M7A 5962-8959840M7A 5962-8959812M7A 5962-8959829M7A 5962-8959811M7A 5962-8959828M7A 5962-8959810M7A 5962-8959827M7A 5962-8959809M7A 5962-8959826M7A 5962-8959808M7A 5962-8959825M7A
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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SRAM
Austin Semiconductor, Inc.
DATE: 2/6/01
MT5C1009
Technical Note:
128Kx8 SRAM - Maximum Recommended Supply Voltage and Ambient Temperature
Compliance:
This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance with JESD78.
Specific Product Affected:
Die Manufacturer: Alliance Semiconductor Corporation Die Name: AS2008SA Device Types: MT5C1008 , MT5C1009 Speed Grades: All Package Designators: All Identifying Date Code Marking: Change implemented on product starting with date code 0100.
Characteristic Identified:
Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp., that operation at high Vcc's of 6 volts and beyond may result in a latch-up condition. This can cause permanent damage to the device.
Recommendation:
During use in system applications and during manufacturing processes, including Burn-In and Test, the devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125C.
MT5C1009 Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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