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| www..com NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50m ID 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS 20 12 8 45 60 3 48 20 -55 to 150 275 UNITS V TC = 25 C TC = 100 C L = 0.1mH L = 0.05mH TC = 25 C TC = 100 C .com ID IDM EAS EAR PD Tj, Tstg TL A mJ W DataShee Operating Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 C SYMBOL RJC RJA RCS TYPICAL MAXIMUM 3 75 UNITS C / W 1 Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 C 25 0.8 1.2 2.5 V LIMITS UNIT MIN TYP MAX 250 nA 25 250 A .com 1 DataSheet 4 U .com DEC-01-2001 www..com NIKO-SEM On-State Drain Current1 Drain-Source On-State Resistance1 N-Channel Logic Level Enhancement Mode Field Effect Transistor ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 5V, ID = 12A VGS = 10V, ID = 12A VDS = 15V, ID = 12A DYNAMIC 12 P3055LD TO-252 (DPAK) A 70 50 16 120 90 m S Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time 2 2 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 15V, RL = 1 ID 12A, VGS = 10V, RGS = 2.5 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 6A VGS = 0V, VDS = 15V, f = 1MHz 450 200 60 15 2.0 7.0 6.0 6.0 20 5.0 nS nC pF Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) t4U.com Continuous Current IS ISM VSD trr IRM(REC) Qrr .com 12 20 Pulsed Current 3 A V nS A C DataShee Forward Voltage1 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 1 2 IF = IS, VGS = 0V 30 IF = IS, dlF/dt = 100A / S 15 0.043 1.5 Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P3055LD", DATE CODE or LOT # .com 2 DataSheet 4 U .com DEC-01-2001 www..com NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LD TO-252 (DPAK) t4U.com .com DataShee .com 3 DataSheet 4 U .com DEC-01-2001 www..com NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LD TO-252 (DPAK) TO-252 (DPAK) MECHANICAL DATA mm Min. 9.35 2.20 0.48 0.89 0.45 0.03 5.20 Typ. Max. 10.10 2.40 0.85 1.50 0.60 0.23 6.20 mm Min. Typ. 0.80 6.40 5.00 0.55 0.60 4.40 6.60 5.50 1.10 1.00 4.60 Max. Dimension A B C D E F G t4U.com Dimension H I J K L M N .com .com 4 DataSheet 4 U .com DEC-01-2001 |
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