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| Shantou Huashan Electronic Devices Co.,Ltd. HC106D Sensitive Gate Silicon Controlled Rectifier General Description Glassivated PNPN devices designed for high volume consumer applications such as temperature,light,and speed control;process and remote control, and warning systems where reliability of operation is important. Features Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat,Rugged,Thermopad Construction for Low Thermal Resistance Sensitive Gate Triggering Maximum Ratings Tj=25ae unless otherwise specified(c) Tstg Tj VDRM VRRM (c) IT RMS IT(AV) ITSM I2t PGM PG(AV) IGM St o r a g e Te mp e r a t u r e - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 4 0 ~ 15 0 ae Operating Junction Temperature ---------------------------------------------- -40~110ae Peak Repetitive Off-State Voltage(Forward) ------------------------------------------------------ 400V Peak Repetitive Off-State Voltage(Reverse) ------------------------------------------------------- 400V On-State R.M.S Current 180 Conduction Angles, TC = 80 C(c) ----------------------------------4A 20A On-State Average Current (180 Conduction Angles, TC = 80 C) -------------------------------2.55A Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, Tj = 110 C) --------Circuit Fusing Considerations(t = 8.3ms) ---------------------------------------------------------Forward Peak Gate Power Dissipation (Pulse Width U 1.0 sec,Tc=80ae ) ---------------------Forward Average Gate Power Dissipation (Pulse Width U Forward Peak Gate Current (Pulse Width U 1.0 sec, Tc=80ae 1.0 sec, Tc=80ae 1.65A2s 0.5W )------------------0.1W )-------------------------------------- 0.2A Shantou Huashan Electronic Devices Co.,Ltd. HC106D Electrical Characteristics TC=25ae Symbol IDRM Items Peak Repetitive Forward or Reverse Blocking Current. unless otherwise specified(c) Typ. Max. Unit Conditions VAK=Rated VDRM or VRRM RKG=1000 ohms Tj=25ae Tj=110ae IFM=1A VAK =6V(DC), RL=100 ohms Tj=25ae Tj=-40ae VAK =6V(DC), RL=100 ohms Tj=25ae Tj=-40ae IGR=10 uA VAK =12V, RL=100 ohms Tj=110ae Min. or IRRM VTM IGT Peak Forward On-State Voltage (1) Gate Trigger Current 2(c) 15 35 10 100 2.2 uA V 200 500 0.8 1.0 6.0 uA VGT Gate Trigger Voltage (2) 0.4 0.5 0.6 0.75 V V VGRM VGD IH Peak Reverse Gate Voltage Gate Non-Trigger Voltage Holding Current 0.19 0.33 0.07 0.2 V Initiating current=20mA, 3.0 6.0 2.0 5.0 3.0 75 260 ae ae VAK= RatedVDRM ,Exponential waveform , RGK=1000 ohms Gate open Tj=110ae mA Gate open, VD =12V(DC) Tj=25ae Tj=-40ae Tj=110ae VAK =12V, IG=20mA Tj=25ae Tj=-40ae Junction to Case Junction to Ambient IL Latching Current 0.2 0.35 mA ae /W /W Rth(j-c) Rth(j-a) TL Thermal Resistance Thermal Resistance Maximum Lead Temperature for Soldering Purpose 1/8'',from case for 10 Seconds Critical Rate-of-Rise Off-state Voltage dv/dt 8.0 V/s (1) Pulse Test : Pulse Width U 2.0ms,Duty CycleU (2) RGK is not included in measurement 2% Shantou Huashan Electronic Devices Co.,Ltd. HC106D Performance Curves |
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