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2SJ680
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V)
2SJ680

Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications
* * * * Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -200 V) Enhancement model: Vth = -1.5 ~ -3.5 V (VDS = -10 V, ID = -1 mA)
Unit: mm
MAX

MAX

Maximum Ratings (Ta = 25C)
MAX 1 MAX
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating -200 -200 20 -2.5 -10 20 97.5 -2.5 2.0 150 -55~150
Unit V V
A W mJ A mJ C C
JEITA TOSHIBA
2-7J2B
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W
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Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = -25.2 mH, IAR = -2.5 A RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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JEDEC
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2SJ680
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd 0V VGS -10 V 50 ID = -1.5 A VOUT VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -200 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -10 V, ID = -1.5 A VDS = -10 V, ID = -1.5 A Min -200 -1.5 1.0 Typ. 1.6 2.0 410 40 145 20 Max 10 -100 -3.5 2.0 pF Unit A A V V S

RL = 66.7 VDD -100 V -

ns
Turn-on time Switching time Fall time
45
15

nC
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge
Duty < 1%, tw = 10 s =
85 10 6 4
VDD -160 V, VGS = -10 V, - ID = -2.5 A
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = -2.5 A, VGS = 0 V IDR = -2.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 135 0.81 Max -2.5 -10 2.0 Unit A A V ns C
Marking
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J680
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SJ680
ID - VDS
-2.0 Common source Tc = 25C pulse test -15 -10 -8 -6 -5 -4.8 -5 -10 -4 -15 -6 -8
ID - VDS
Common source Tc = 25C, pulse test -5.75
-1.6
(A)
(A)
-4.6
-5.5 -5.25 -5
ID
-1.2
ID Drain current
-4.4 -4.2 VGS = -4 V
-3
Drain current
-0.8
-2
-4.8 -4.6 -4.4
-0.4
-1
-4.2 VGS = -4 V
0 0
-1
-2
-3
-4
-5
0 0
-10
-20
-30
-40
-50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS (V)
ID - VGS
-10 Common source -8 VDS = -10 V pulse test Tc = -55C -10
VDS - VGS
Common source
(V)
-8
pulse test
Drain-source voltage
-6
25
-6
-4
100
-4
ID = -2.5 A
-1.5 -2 -0.8
-2
0 0
-2
-4
-6
-8
-10
0 0
-4
-8
-12
-16
-20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
10 Common source 10 Common source Tc = 25C pulse test 25 100 VDS = -10 V pulse test
RDS (ON) - ID
(S)
Forward transfer admittance Yfs
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Drain-source ON-resistance RDS (ON) ()
Tc = -55C
VGS = -10 V -15 1
1
0.1 -0.1
-1
-10
0.1 -0.1
-1
-10
Drain current
ID (A)
Drain current
ID (A)
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Tc = 25C
(A)
Drain current
ID
VDS
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2SJ680
RDS (ON) - Tc
6 Common source VGS = -10 V pulse test ID = -1.5 A -10 Common source Tc = 25C pulse test
IDR - VDS
4
-1.2
Drain reverse current IDR (A)
5
Drain-source ON-resistance RDS (ON) ()
3
-1.0
-1
2
1
-5 0 -80 -40 0 40 80 120 160 -0.1 0 0.2
-3 0.4
-1 0.6
VGS = 0 V 0.8 1
Case temperature
Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
1000 Ciss 5
Vth - Tc
Common source
Vth (V)
4
ID = 1 mA pulse test
Gate threshold voltage
100 Coss
3
2
10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 -0.1 -1 -10
Crss
1
0 -80 -100
-40
0
40
80
120
160
Case temperature
Tc
(C)
Drain-source voltage
VDS (V)
PD - Tc
40 -160
Dynamic input/output characteristics
VDS VDS = -40 V -120 -180 -80 -80 -40 VGS -4 Common source ID = -2.5 A Tc = 25C pulse test -8 -12 -16
(W)
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PD
VDS
Drain power dissipation
Drain-source voltage
20
10
0 0
40
80
120
160
0 0
4
8
12
16
20
Case temperature
Tc
(C)
Total gate charge Qg (nC)
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Gate-source voltage
VGS
30
(V)
(V)
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VDS = 10 V
Capacitance
C
(pF)
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2SJ680
rth - tw
3
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10
Duty = 0.5 0.2 0.1 0.05 0.02 Single pulse PDM t 0.01 T Duty = t/T Rth (ch-c) = 6.25C/W 100 1m 10 m 100 m 1 10 100
Pulse width
tw
(S)
Safe operating area
-30 -10 -5 -3 ID max (pulse) * 100 s* 100
EAS - Tch
(mJ)
80
(A)
EAS
1 ms*
60
Drain current
-0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.005 -0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. -0.3 -1 -3 -10 -30 -100 -300 VDSS max DC operation
Avalanche energy
ID
-1
40
20
0 25
50
75
100
125
150
Channel temperature
Tch
(C)
Drain-source voltage
VDS (V)
15 V -15 V
BVDSS IAR VDD VDS Waveform
AS = 1 B VDSS L I2 B 2 - VDD VDSS
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Test circuit RG = 25 VDD = -50 V, L = 25.2 mH
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2SJ680
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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