View 2N7002CK_86619.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 -- 11 September 2009 Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features
I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV
1.3 Applications
I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS ID IDM RDSon Quick reference data Parameter drain-source voltage drain current peak drain current drain-source on-state resistance single pulse; tp 10 s VGS = 10 V; ID = 500 mA Conditions Min Typ 1.1 Max 60 300 1.2 1.6 Unit V mA A
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain
1 2
G
Simplified outline
3
Graphic symbol
D
S
017aaa000
3. Ordering information
Table 3. Ordering information Package Name 2N7002CK Description Version SOT23 TO-236AB plastic surface-mounted package; 3 leads Type number
4. Marking
Table 4. 2N7002CK
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code[1] LP*
Type number
2N7002CK_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
2 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current VGS = 10 V Tamb = 25 C Tamb = 100 C IDM Ptot Tj Tamb Tstg IS ISM VESD peak drain current total power dissipation junction temperature ambient temperature storage temperature source current peak source current electrostatic discharge voltage Tamb = 25 C Tamb = 25 C; tp 10 s all pins; human body model; C = 100 pF; R = 1.5 k -55 -65 Tamb = 25 C; tp 10 s Tamb = 25 C
[1]
Conditions 25 C Tj 150 C
Min -
Max 60 20 300 190 1.2 350 150 +150 +150 200 1.2 3
Unit V V mA mA A mW C C C mA A kV
Source-drain diode
ElectroStatic Discharge (ESD)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
120 Pder (%) 80
017aaa001
120 Ider (%) 80
017aaa002
40
40
0 -75
-25
25
75
125 175 Tamb (C)
0 -75
-25
25
75
125 175 Tamb (C)
P tot P der = ----------------------- x 100 % P tot ( 25C ) Fig 1. Normalized total power dissipation as a function of ambient temperature Fig 2.
ID I der = ------------------- x 100 % I D ( 25C ) Normalized continuous drain current as a function of ambient temperature
(c) NXP B.V. 2009. All rights reserved.
2N7002CK_1
Product data sheet
Rev. 01 -- 11 September 2009
3 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
10 ID (A) 1 Limit RDSon = VDS/ID
017aaa003
tp = 10 s
100 s
10-1 DC
1 ms 10 ms 100 ms
10-2 10-1
1
10 VDS (V)
102
Tsp = 25 C; IDM = single pulse; VGS = 10 V
Fig 3.
Safe operating area; junction to solder point; continuous and peak drain currents as a function of drain-source voltage
10
017aaa004
ID (A) 1
Limit RDSon = VDS/ID
tp = 10 s
100 s 10-1 DC 10-2
1 ms 10 ms 100 ms
10-3 10-1
1
10 VDS (V)
102
Tamb = 25 C; IDM = single pulse; VGS = 10 V
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1]
Min -
Typ 350
Max 500
Unit K/W
2N7002CK_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
4 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Thermal characteristics ...continued Parameter thermal resistance from junction to solder point Conditions Min Typ Max 150 Unit K/W
Table 6. Symbol Rth(j-sp)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter Conditions Min Typ Max Unit Static characteristics drain-source breakdown ID = 10 A; VGS = 0 V voltage Tj = 25 C Tj = -55 C VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 250 A; VDS = VGS; Tj = 25 C VDS = 60 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS gate leakage current VGS = 20 V; VDS = 0 V VGS = 10 V; VDS = 0 V VGS = 5 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 4.5 V; ID = 200 mA Tj = 25 C Tj = 150 C VGS = 10 V; ID = 500 mA Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage IS = 200 mA; VGS = 0 V VDS = 15 V; RL = 15 ; VGS = 10 V; RG = 6 ID = 200 mA; VDS = 10 V; VGS = 4.5 V VGS = 0 V; VDS = 25 V; f = 1 MHz 0.47 1.09 0.22 0.23 47.2 11 5 8 8 38 22 0.79 1.3 55 20 7.5 15 15 50 35 1.1 nC nC nC pF pF pF ns ns ns ns V 1.3 2.8 1.1 3 4.4 1.6 50 100 1 5 450 100 nA A A nA nA 60 55 1 1.75 2.5 V V V
Source-drain diode
2N7002CK_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
5 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
1.0 ID (A) 0.8
(1) (2) (3)
017aaa005
10-3 ID (A) 10-4
017aaa006
(4)
0.6
(5)
(1)
(2)
(3)
0.4 10-5 0.2
0.0 0 1 2 3 VDS (V) 4
10-6 0 1 2 VGS (V) 3
Tj = 25 C (1) VGS = 10 V (2) VGS = 5 V (3) VGS = 4.5 V (4) VGS = 4 V (5) VGS = 3.5 V
Tj = 25 C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
2.5
017aaa007
Fig 6.
Sub-threshold drain current as a function of gate-source voltage
4 RDSon () 3
(1)
017aaa008
RDSon () 2.0
(1)
(2)
1.5
(3)
2
(2)
(4)
1.0
1
(3)
0.5 0.0
0 0.2 0.4 0.6 0.8 ID (A) 1.0 0 2 4 6 8 10 VGS (V)
Tj = 25 C (1) VGS = 4 V (2) VGS = 4.5 V (3) VGS = 5 V (4) VGS = 10 V
ID = 500 mA (1) Tj = 150 C (2) Tj = 25 C (3) Tj = -55 C
Fig 7.
Drain-source on-state resistance as a function of drain current; typical values
Fig 8.
Drain-source on-resistance as a function of gate-source voltage; typical values
(c) NXP B.V. 2009. All rights reserved.
2N7002CK_1
Product data sheet
Rev. 01 -- 11 September 2009
6 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
2.4 a
017aaa009
3 VGS(th) (V)
(1)
017aaa010
1.8 2
(2)
1.2
(3)
1 0.6
0.0 -60
0
60
120 Tj (C)
180
0 -60
0
60
120 Tj (C)
180
R DSon a = ----------------------------R DSon ( 25C )
ID = 0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values
Fig 9.
Normalized drain-source on-state resistance factor as a function of junction temperature
102
(1)
Fig 10. Gate-source threshold voltage as a function of junction temperature
017aaa011
C (pF)
(2)
10
(3)
1 10-1
1
10 VDS (V)
102
VGS = 0 V; f = 1 MHz (1) Ciss (2) Coss (3) Crss
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
2N7002CK_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
7 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
10 VGS (V) 8
017aaa012
1.0 IS (A) 0.8
017aaa013
6
0.6
(1)
(2)
(3)
4
0.4
2
0.2
0 0.0
0.4
0.8 QG (nC)
1.2
0.0 0.2
0.4
0.6
0.8
1.0 1.2 VSD (V)
ID = 200 mA; VDD = 30 V; Tj = 25 C
VGS = 0 V (1) Tj = 150 C (2) Tj = 25 C (3) Tj = -55 C
Fig 12. Gate-source voltage as a function of gate charge; typical values
Fig 13. Source current as a function of source-drain voltage; typical values
2N7002CK_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
8 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
8. Package outline
Plastic surface-mounted package; 3 leads SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB JEITA
EUROPEAN PROJECTION
ISSUE DATE 04-11-04 06-03-16
Fig 14. Package outline SOT23 (TO-236AB)
2N7002CK_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
9 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
9. Soldering
3.3 2.9 1.9
solder lands solder resist 3 1.7 2 solder paste 0.6 (3x) occupied area Dimensions in mm 0.5 (3x) 0.6 (3x) 1
sot023_fr
0.7 (3x)
Fig 15. Reflow soldering footprint SOT23 (TO-236AB)
2.2 1.2 (2x)
1.4 (2x) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4
preferred transport direction during soldering 2.8 4.5
sot023_fw
Fig 16. Wave soldering footprint SOT23 (TO-236AB)
2N7002CK_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
10 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
10. Revision history
Table 8. Revision history Release date 20090911 Data sheet status Product data sheet Change notice Supersedes Document ID 2N7002CK_1
2N7002CK_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
11 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
2N7002CK_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 September 2009
12 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 September 2009 Document identifier: 2N7002CK_1

▲Up To Search▲

Price & Availability of 2N7002CK

	To Download 2N7002CK Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .