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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C945 FEATURES Power dissipation PCM: Collector current ICM: V (BR) CBO: 0.15 60 A V Collector-base voltage Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter voltage breakdown Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure VCE(sat) VBE(sat) VCE=6V, IC=0.1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=10mA, f =30 MHz VCB=10V, IE=0, f=1MHZ VCE=6V, IC=0.1mA Rg=10k, f=1kMHZ 4 200 3.0 10 40 0.3 1 V V MHz pF dB TRANSISTOR (NPN) TO-92 0.4 W (Tamb=25) 1. EMITTER 2. COLLECTOR 3. BASE 123 unless otherwise specified) Test conditions MIN 60 50 5 0.1 0.1 0.1 70 700 TYP MAX UNIT V V V A A A Ic=1mA, IE=0 IC=100uA , IB=0 IE=100A, IC=0 VCB=60V, IE=0 VCE=45V VEB=5V, IC=0 VCE=6V, IC=1mA Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current fT Cob NF CLASSIFICATION OF hFE(1) Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700 |
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