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| 2SC4512 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 80 6 6 3 50(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio and General Purpose (Ta=25C) Ratings 10max 10max 80min 50min 0.5max 20typ 110typ V MHz pF 12.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=5A, IB=0.2A VCE=12V, IE=-0.5A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.00.2 10.20.2 4.80.2 2.00.1 Unit A A 16.00.7 V 8.80.2 a b o3.750.2 O(50 to100), P(70 to140), Y(90 to180) 2.5 BCE 4.0max 1.35 0.65 +0.2 -0.1 2.5 1.4 www..com sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL () 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.3 ton (s) 0.16typ tstg (s) 2.60typ tf (s) 0.34typ Weight : Approx 2.6g a. Part No. b. Lot No. IC - VCE Characteristics (Typical) 0m A 15 0m A 1 m 00 A A 80m VCE( sat ) - IB Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 3 I C - VBE Temperature Characteristics (Typical) 6 (V CE= 4V) 6 20 Collector Current I C (A) 50 mA Collector Current I C( A) 4 2 4 30mA Cas e Te mp (Cas e Tem ) p) I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0 0 0 1 2 3 4 -30C 25C 125 IB=10mA C ( (Case 2 20mA 1 2 1 Base-Emittor Voltage V B E( V) Temp ) 2 Collector-Emitter Voltage V C E( V) Base Current I B( A) (V C E= 4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125C (VCE=4V) j - a( C/W) hFE - IC Characteristics (Typical) hFE - I C Temperature Characteristics (Typical) j-a - t Characteristics 5 100 25C 100 Typ -30C 50 Transient Thermal Resistance 1 50 0.5 0.4 1 10 100 Time t(ms) 1000 2000 30 0.02 0.1 0.5 1 56 20 0.02 0.1 0.5 1 56 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) (V C E= 12V) 40 20 10 Cu t-off Fre quen cy f T( M H Z) 5 30 Collector Curre nt I C( A) Safe Operating Area (Single Pulse) 50 10 P c - T a Derating s Ma xim um Powe r Dissipation P C (W) 100ms m 40 W ith DC In Typ fin 30 ite he 20 1 0.5 at si nk 20 10 Without Heatsink Natural Cooling 0.1 10 Without Heatsink 0 25 50 75 100 125 150 0 -0.02 -0.1 -1 -6 0.05 3 5 10 50 100 2 0 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 112 |
Price & Availability of C4512
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