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| Datasheet File OCR Text: |
| IGBT MODULE ( N series ) n Features * * * * n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Terminal Screw Torque *1 Symbols VCES VGES IC IC PULSE -IC PULSE PC VCES VCES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO Test Conditions Ratings 1200 20 50 100 50 400 1200 20 25 50 200 1200 1 50 +150 -40 +125 2500 3.5 3.5 Units V A W V A W V A C V Nm Continuous 1ms Continuous 1 device Continuous 1ms 1 device 10ms A.C. 1min. Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) n Electrical Characteristics( Tj=25C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time Symbols ICES IGES VGE(th) VCE(sat) Cies ton toff tf VF trr ICES IGES VCE(sat) ton toff tf IRRM trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=50mA VGE=15V IC=50A f=1MHz, VGE=0V, VCE=10V VCC=600V IC = 50A VGE=15V RG = 24 IF=50A VGE=0V -di A IF=50A; VGE=-10V; /dt=150 /s VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=15V IC=25A VCC=600V IC = 25A VGE=15V RG = 51 VR=1200V Min. Max. 3.0 15 4.5 7.5 3.3 8000 (typ.) 1.2 1.5 0.5 3.0 350 1.0 100 3.3 1.2 1.5 0.5 1.0 600 Units mA A V pF s V ns mA nA V s mA ns n Thermal Characteristics Items Thermal Resistance (1 device) Contact Thermal Resistance Symbols Rth(j-c) Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT With Thermal Compound Min. Max. 0.31 0.85 0.63 0.05 (typ.) Units C/W Collector current vs. Collector-Emitter voltage T j=25C 125 V GE =20V,15V,12V,10V 100 100 C Collector current vs. Collector-Emitter voltage T j=125C 125 V GE=20V,15V,12V,10V, C [A] Collector current : I Collector current : I 75 [A] 75 50 50 8V 25 8V 25 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 10 CE Collector-Emitter vs. Gate-Emitter voltage T j=125C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 100A 50A 25A 4 IC= 100A 50A 25A 2 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, R G =24 , V GE =15V, Tj=25C 1000 t off t on 1000 Switching time vs. Collector current V CC =600V, R G =24 , V GE =15V, Tj=125C t off t on tf tr , t r , t off , t f [nsec] tf tr on on 100 , t r , t off , t f [nsec] Switching time : t 100 10 100 Switching time : t 10 0 25 50 Collector current : I C [A] 75 0 25 50 Collector current : I C [A] 75 100 Switching time vs. R G V CC =600V, I C=50A, V GE =15V, Tj=25C 1000 Dynamic input characteristics T j=25C 25 V CC =400V 600V 20 800V , t r , t off , t f [nsec] 1000 tr tf Collector-Emitter voltage : V CE t off t on [V] 800 600 15 Switching time : t on 400 10 100 200 5 10 Gate resistance : R G [ W ] 100 0 0 100 200 300 400 500 600 0 700 Gate charge : Q G [nC] Forward current vs. Forward voltage V GE =OV 125 Reverse recovery characteristics t rr , I rr vs. I F [A] 100 T j=125C 25C rr [nsec] t rr 125C t rr 25C 100 [A] Reverse recovery current : I F Forward current : I 75 Reverse recovery time :t rr I rr 125C I rr 25C 50 25 10 0 0 1 2 3 4 5 0 25 50 Forward current : I F [A] 75 100 Forward voltage : V F [V] Reversed biased safe operating area Transient thermal resistance 1 Diode 500 Brake IGBT 400 C +V GE =15V, -V GE <15V, T j<125C, R G >24 [C/W] th(j-c) IGBT [A] Collector current : I SCSOA 300 (non-repetitive pulse) Thermal resistance : R 0,1 200 100 RBSOA (Repetitive pulse) 0,01 0,001 0,01 0,1 1 0 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V] Switching loss vs. Collector current V CC =600V, R G =24 , V GE =15V 20 Capacitance vs. Collector-Emitter voltage T j=25C , E off , E rr [mJ/cycle] 15 , C oes , C res [nF] E on 125C E off 125C E on 25C 10 C ies on Switching loss : E Capacitance : C ies 10 1 C oes C res E off 25C 5 E rr 125C E rr 25C 0 0 25 50 Collector Current : I C [A] 75 100 0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Brake Chopper IGBT Collector current vs. Collector-Emitter voltage T j =25C 60 V GE =20V,15V,12V,10V 50 [A] 50 60 V GE =20V,15V,12V,10V, Collector current vs. Collector-Emitter voltage T j =125C Collector current : I 30 Collector current : I C [A] C 40 40 30 8V 20 8V 10 20 10 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j =25C 10 [V] CE CE Collector-Emitter vs. Gate-Emitter voltage T j =125C 10 [V] 8 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 50A 25A 12.5A 4 IC= 50A 25A 12.5A 2 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, R G =51 , V GE =15V, Tj =25C 1000 t off t on tf tr , t r , t off , t f [nsec] 1000 Switching time vs. Collector current V CC =600V, R G =51 , V GE =15V, Tj =125C toff ton tf tr , t r , t off , t f [nsec] on on 100 Switching time : t 10 0 20 Collector current : I C [A] 40 Switching time : t 100 10 0 20 Collector current : I C [A] 40 Brake Chopper IGBT Switching time vs. R G V CC =600V, I C =25A, V GE =15V, Tj =25C 1000 , t r , t off , t f [nsec] t off t on 1000 tr tf V CC =400V [V] CE Dynamic input characteristics T j =25C 25 800 600V 800V 20 Collector-Emitter voltage : V 600 15 Switching time : t on 400 10 200 100 5 0 10 100 Gate resistance : R G [ ] 0 100 200 300 400 Gate charge : Q G [nC] 0 500 Reversed biased safe operating area +V GE =15V, -V GE <15V, T j <125C, R G >51 250 , E off , E rr [mJ/cycle] 6 Switching loss vs. Collector current V CC =600V, R G =51 , V GE =15V 200 [A] C 5 E on 125C E off 125C Collector current : I 150 SCSOA (non-repetitive pulse) 4 Switching loss : E 100 on 3 E on 25C 2 50 E off 25C E rr 125C E rr 25C RBSOA (Repetitive pulse) 1 0 0 200 400 600 800 1000 1200 Collector-Emitter voltage : V CE [V] 0 0 10 20 30 40 50 Collector Current : I C [A] Capacitance vs. Collector-Emitter voltage T j =25C , C oes , C res [nF] 10 C ies 1 Capacitance : C ies C oes C res 0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 Box 702708 - Dallas, TX - (972) 233-1589 Fax (972) 233-0481(fax) P.O. - Dallas, TX 75370 Phone (972) 733-1700 - (972) 381-9991 - www.collmer.com |
Price & Availability of 7MBI50N-120
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