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PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 - 2000 MHz
Description
The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1800 to 2000 MHz. These devices are offered in thermally-enhanced ceramic packages for cool and reliable operation. PTMA180402EL Package H-33265-8
PTMA180402FL Package H-34265-8
Features
Broadband Performance
VDD = 28 V, IDQ1 = 110 mA, IDQ1 = 330 mA
35 0
* * *
-5 -10 -15
Designed for wide RF and modulation bandwidths and low memory effects On-chip matching, integrated input DC block, 50-ohm input and > 5-ohm output Typical single-carrier CDMA performance at 1960 MHz, 28 V - Average output power = 4 W - Linear gain = 30 dB - Efficiency = 14% - Adjacent channel power = -53 dBc Typical 2-tone performance, 1960 MHz, 28 V - Output power (PEP) = 50 W at IM3 = -30 dBc - Efficiency = 33% Capable of handling 10:1 VSWR @ 28 V, 40 W (CW) output power Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F High-performance, thermally-enhanced packages, Pb-free and RoHS compliant, with solder-friendly plating
Gain
30 25 20 15 10 5 1700
Return Loss
Return Loss (dB)
Gain (dB)
-20 -25 -30 2200
*
* * *
1800
1900
2000
2100
Frequency (MHz)
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 11
*See Infineon distributor for future availability.
Rev. 08, 2009-08-31
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
RF Characteristics
CDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA, POUT = 4 W average, = 1960 MHz Characteristic
Gain Drain Efficiency Adjacent Channel Power Ratio
Symbol
Gps
Min
28.5 13 --
Typ
30 14 -53
Max
-- -- -50
Unit
dB % dBc
D
ACPR
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on)
Min
65 -- -- --
Typ
-- -- -- 0.21
Max
-- 1.0 10.0 --
Unit
V A A
Final Stage On-state Resistance Operating Gate Voltage
VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA
VGS IGSS
2.0 --
2.5 --
3.0 1.0
V A
Gate Leakage Current
VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Overall Thermal Resistance (TCASE = 70C) POUT = 40 W, IDQ1 = 160 mA, IDQ2 = 330 mA 1st Stage 2nd Stage TSTG RJC RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 175 1.0 -40 to +150 5.0 1.1
Unit
V V C W W/C C C/W C/W
Ordering Information
Type and Version PTMA180402EL V1 PTMA180402FL V1 Data Sheet Package Type H-33265-8 H-34265-8 Package Description Themally-enhanced, slotted flange Themally-enhanced, earless flange 2 of 11 Shipping Tray Tray Marking PTMA180402EL PTMA180402FL Rev. 08, 2009-08-31
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
CW Performance
VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 330 mA
32 50 40 30 20 = 1930 MHz = 1960 MHz = 1990 MHz 30 35 40 45 50 10 0
Two-tone at Selected Frequencies
VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 330 mA
40 -20 -25 -30 -35
31
Power Added Efficiency (%)
Efficiency Gain
35 30
Gain (dB)
PAE (%)
30 29 28 27
25 20 15 10 5 0 30 35 = 1930 MHz = 1960 MHz = 1990 MHz 40 45
Efficiency IMD3
-40 -45 -50 -55 -60
Output Power (dBm)
Output Power, avg. (dBm)
IS-95 at Selected Frequencies
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA
-35 -40 = 1930 MHz = 1960 MHz = 1990 MHz 25
IS-95 at Selected Temperatures
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, = 1960 MHz Gain Gain (dB), Power Added Efficiency (%)
Power Added Efficiency (%)
35 -45 25 +25C -25C +90C -50 -55 -40
20 15 10
ACPR (dBc)
-45 -50 -55
PAE
15
ACPR
-60 -65 0 2 4 6 8 10
5 0
5
ACPR
-60 -65
-5 0 2 4 6 8 10
Output Power (W)
Output Power, avg. (W)
*See Infineon distributor for future availability. Data Sheet 3 of 11 Rev. 08, 2009-08-31
Adj. Ch. Power Ratio (dBc)
Efficiency
IMD3 (dBc)
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Gate - Source Voltage vs. Temperature
VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA
1.15
WCDMA Performance
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, Test Mode 1 w/64 DPCH, PAR = 7.5 dB
-30 -35 = 1930 MHz = 1960 MHz = 1990 MHz 25 20
Normalized Gate - Source Voltage (threshold), V
ACPR (dBc)
1.05 1.00 0.95 0.90 0.85 -30 -10 10 30 50 70 90
-40 -45 -50
Efficiency
15 10 5
Slope = -1.3 mV/C
ACPR
-55 1 3 5 7 9 11 0
Temperature (C)
Output Power (W)
EDGE EVM Performance
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, = 1960 MHz
30 25 3
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ! = 160 mA, IDQ2 = 330 mA, = 1960 MHz
-35 40
EVM RMS (average %).
Drain Efficiency (%)
Efficiency
2
-45
Efficiency 400 kHz
32 24 16 8 0
ACPR (dB) .
20 15 10 5 0 30 32 34 36 38 40 42 44
-55 -65 -75 -85 30 32
EVM
1
600 kHz
0
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 08, 2009-08-31
Efficiency (%)
Power Added Efficiency (%)
1.10
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Six-carrier TD-SCDMA Drive-up
VDD = 28 V, IDQ1 = 230 mA, IDQ2 = 335 mA, = 2017.5 MHz
-30 Adj Low er -35 Adj Upper Alt Low er Alt Upper Effciency -45 -50 -55 31 32 33 34 35 36 37 38 39 10 5 0 20 15 25
-40
Output Power (dBm)
Broadband Circuit Impedance
Frequency Z Load
R 8.89 7.27 6.26 5.59 5.14 4.89 jX -3.62 -2.99 -2.13 -1.19 -0.27 0.67
D IN
Z Load
Efficiency (%)
ACPR (dBc)
MHz 1700 1800 1900 2000 2100 2200
S
Z0 = 50
- WAVELE NGTH ST
0.0
0.1
0.2
0.3
0.4
AD TOW ARD LO GTHS
Z Load
0.1
1700 MHz
Data Sheet
W
LEN A VE
5 of 11
Rev. 08, 2009-08-31
0.5
2200 MHz
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Reference Circuit
VD1 C1 100F 50V C2 10F C3 1F C4 0.1F C5 12pF C19 12pF C20 0.1F C21 1F C22 10F C23 100F 50V VD2
l8
DUT 1 2 3 J1
l1
4 5 6 7
PTMA18040
C31 12pF 8
l2
l3
C29 2.2pF
l4
l5
C30 2.7pF
l6
l7
J2
VG1 C6 10F C7 1F C8 0.1F C9 12pF
C15 0.1F C16 1F
C14 12pF
l9
VG2 C10 10F C11 1F C12 0.1F C13 12pF
C17 10F
C18 100F 50V
C24 12pF
C25 0.1F
C26 1F
C27 10F
C28 100F 50V
Reference circuit schematic for = 1930 - 1990 MHz
Circuit Assembly Information
DUT PCB PTMA180402EL or PTMA180402FL 0.76 mm [.030"] thick, r = 3.48 LDMOS IC Rogers RO4350
1 oz. copper
Microstrip
Electrical Characteristics at 1960 MHz
0.224 0.022 0.027 0.035 0.048 0.153 0.046 0.136 , 49.8 , 10.4 , 10.4 , 34.1 , 34.1 , 44.5 , 49.8 , 61.1
Dimensions: L x W (mm)
20.75 x 1.70 1.85 x 13.00 2.26 x 13.00 3.18 x 3.00 4.29 x 3.00 14.07 x 2.03 4.27 x 1.70 12.83 x 1.19
Dimensions: L x W (in.)
0.817 0.073 0.089 0.125 0.169 0.554 0.168 0.505 x x x x x x x x 0.067 0.512 0.512 0.118 0.118 0.080 0.067 0.047
l1 l2 l3 l4 l5 l6 l7 l8, l9
Data Sheet
6 of 11
Rev. 08, 2009-08-31
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Reference circuit asembly diagram* (not to scale)*
Component
C1, C18, C23, C28 C2, C6, C10, C17, C22, C27 C3, C7, C11, C16, C21, C26 C4, C8, C12, C15, C20, C25 C5, C9, C13, C14, C19, C24, C31 C29 C30
Description
Electrolytic capacitor, 100 F, 50 V Ceramic capacitor, 10 F Ceramic capacitor, 1 F Capacitor, 0.1 F Ceramic capacitor, 12 pF Ceramic capacitor, 2.2 pF Ceramic capacitor, 2.7 pF
Suggested Manufacturer
Digi-Key Murata Digi-Key Digi-Key ATC ATC ATC
P/N or Comment
PCE3718CT-ND GRM422Y5V106Z050AL 445-1411-2-ND 399-1267-2-ND 600S120JT 600S2R2CT 600S2R7BT
*Gerber files for this circuit available on request Data Sheet 7 of 11 Rev. 08, 2009-08-31
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Package Specifications Package H-33265-8 Outline
15.24 [.600] 7.11 [.280]
(45 X 2.03 [.08])
C L
8
4X R 0.13 [.05] MAX LID
2.540.51 [.100.020]
10.16 [.400] WINDOW FRAME & LID 123
C L
9.78 [.385] FLANGE
15.240.51 [.600.020]
4
567
4X R 0.63 [.025] MAX WINDOW FRAME
6X 0.406 [.016] 0.76 [.030] 2X 3.48 [.137]
2X R1.59 [R.063] 4X R1.52 [R.060]
2X 4.57 [.180]
2X 2.21 [.087] 9.55 [.376] REF 10.16 [.400]
C L
SPH 1.57 [.062] 1.02 [.040]
0.038 [.0015] -Ah-33+34265_POs_33265-8_0801
3.68.38 [.145.015]
20.32 [.800]
S
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. Interpret dimensions and tolerances per ASME Y14.5M-1994. Pins: S = source; see page 11 for complete list and diagram. Lead thickness: 0.1270.025 [.0050.001] Gold plating less than 0.25 micron [10 microinch]. All tolerances 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Data Sheet
8 of 11
Rev. 08, 2009-08-31
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Package Specifications (cont.) Package H-34265-8 Outline
7.11 [.280] (45 X 2.03 [.08])
C L
4X R 0.13 [.05] MAX LID
2.540.51 [.100.020]
8
10.16 [.400] SQ FLANGE & LID 123
C L
15.240.51 [.600.020]
4
567
4X R 0.63 [.025] MAX FLANGE
6X 0.406 [.016] 0.76 [.030]
2X 4.57 [.180] 2X 3.48 [.137] 2X 2.21 [.087] 9.55 [.376] REF 10.16 [.400]
C L
SPH 1.57 [.062] 1.02 [.040]
0.038 [.0015] -Ah-33+34265_POs_34265-8_0801
3.68.38 [.145.015]
10.16 [.400]
S
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. Interpret dimensions and tolerances per ASME Y14.5M-1994. Pins: S = source; see page 11 for complete list and diagram. Lead thickness: 0.1270.025 [.0050.001] Gold plating less than 0.25 micron [10 microinch]. All tolerances 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Data Sheet
9 of 11
Rev. 08, 2009-08-31
PTMA180402EL PTMA180402FL
Confidential, Limited Internal Distribution
Package Specifications (cont.) Package H-3X265-8 Pin Diagram
1 2 3 4 5 6 7 NC 1st 2nd
a180402efl PD pi nout 2007 12 12
Thermal FET
Pin #
S (flange, see Package Outlines) 1 2 3 4 5 6 7 8
Function
Source Drain 1 FET_D FET_G RF In Gate 1 Gate 2 NC RFOut/D2
8
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 08, 2009-08-31
PTMA180402EL/FL Confidential, Limited Internal Distribution Revision History: 2009-08-31 2009-04-01, Data Sheet Previous Version: Page Subjects (major changes since last revision) 1 Revised VSWR rating
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-08-31 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 08, 2009-08-31

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