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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTD122JKPT CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT346) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=220, Typ. ) SC-59/SOT-346 (2) (3) 0.95 2.7~3.1 0.95 (1) 1.7~2.1 CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. 0.3~0.51 1.2~1.9 MARKING JKB 0.085~0.2 Gnd In 1 0.89~1.3 0.3~0.6 2.1~2.95 0~0.1 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-59/SOT-346 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO PTOT TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-01 PARAMETER Supply voltage Input voltage DC Output current Total power dissipation Storage temperature Junction temperature Thermal resistance CONDITIONS - -5 - Tamb 25 OC, Note 1 - MIN. MAX. 50 +5 500 200 +150 150 180 V V UNIT mA mW O -55 - junction - soldering point - C C O O C/W RATING CHARACTERISTIC ( CHDTD122JKPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-50mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=5.0V IO=30mA; VO=0.3V IO=50mA; II=2.5mA VI=5V VI=0V; VCC=50V IO=50mA; VO=5.0V - - - - 47 154 17.1 - MIN. 0.5 - - 0.1 - - - 220 21.3 250 TYP. - 2.0 0.3 45.0 0.5 - 286 25.6 - MHz MAX. V V V mA uA UNIT Note 1.Pulse test: tp300uS; 0.02. |
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