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APTGF660U60D4G Single switch NPT IGBT Power Module 1 VCES = 600V IC = 660A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * M6 connectors for power * M4 connectors for signal * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant 3 5 2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 860 660 1320 20 2800 1600A@520V Unit V A V W July, 2008 1-5 APTGF660U60D4G - Rev 2 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF660U60D4G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 800A Tj = 125C VGE = VCE , IC = 16mA VGE = 20V, VCE = 0V Min Typ Max 500 1 2.45 6.5 2400 Unit A mA V V nA 4.5 1.95 2.2 5.5 Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=800A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 800A RG = 16 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 800A RG = 16 VGE = 15V Tj = 125C VBus = 300V IC = 800A Tj = 125C RG = 16 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 36 3.2 2 150 72 530 40 160 75 550 50 36 33 3600 mJ mJ A ns Max Unit nF C ns Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 800A VR = 300V IF = 800A VGE = 0V Test Conditions VR = 600V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 750 1000 800 1.25 1.2 150 250 57 80 11.6 22.8 1.6 Unit V A A V July, 2008 2-5 APTGF660U60D4G - Rev 2 ns C mJ di/dt =7000A/s www.microsemi.com APTGF660U60D4G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.044 0.085 150 125 125 5 2 350 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g D4 Package outline (dimensions in mm) www.microsemi.com 3-5 APTGF660U60D4G - Rev 2 July, 2008 APTGF660U60D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 1600 TJ = 125C VGE=15V VGE=12V 1600 TJ=25C 1200 IC (A) IC (A) TJ=125C 1200 VGE=20V 800 800 VGE=9V 400 400 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 0 1 2 3 VCE (V) 4 5 1600 Transfert Characteristics 70 60 Energy losses vs Collector Current VCE = 300V VGE = 15V RG = 16 TJ = 125C 1200 E (mJ) IC (A) 50 40 30 20 TJ=25C Eon 800 TJ=125C Eoff Err 400 10 0 0 300 600 IC (A) 900 1200 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 100 80 E (mJ) 60 40 20 0 10 20 30 40 50 Gate Resistance (ohms) 60 Err VCE = 300V VGE =15V IC = 800A TJ = 125C Eon 2000 1600 Eoff Reverse Safe Operating Area IC (A) 1200 800 400 0 0 100 200 300 VCE (V) 400 500 600 VGE=15V TJ=125C RG=16 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.05 Thermal Impedance (C/W) 0.04 0.03 0.5 0.02 0.01 0.3 0.1 0.05 0.0001 0.9 0.7 IGBT Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 0 0.00001 www.microsemi.com 4-5 APTGF660U60D4G - Rev 2 July, 2008 APTGF660U60D4G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 200 400 600 IC (A) 800 1000 0 0 0.3 0.6 0.9 VF (V) 1.2 1.5 hard switching ZVS VCE=300V D=50% RG=16 TJ=125C TC=75C ZCS Forward Characteristic of diode 1600 1200 IF (A) 800 TJ=125C 400 TJ=25C 0.1 Thermal Impedance (C/W) 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Diode Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF660U60D4G - Rev 2 July, 2008 |
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