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| MA P 3 0 7 9 The item can replace 2SK3079 Approved by: Checked by: Issued by: SPECIFICATION PRODUCT: N-channel MOSFET MODEL: MA P 3 0 7 9 SOT 2 2 3 HOPE MICROELECTRONIC CO.,LIMITED Tel:+86-755-82973805 Fax:+86-755-82973550 Page 1 of 3 E-mail: sales@hoperf.com http://www.hoperf.com MAP3079 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) l Output Power l Gain l Drain Efficiency : PO = 33.0dBmW (Min) : GP = 7.0dB (Min) : D = 40% (Min) Unit: mm MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDSS VGSS ID PD* Tch Tstg RATING 10 5 5 20.0 150 -45~150 UNIT V V A W C C *: Tc = 25C When mounted on a 1.6 mm glass epoxy PCB Tel:+86-755-82973806 Fax:+86-755-82973550 E-mail: sales@hoperf.com 2 http://www.hoperf.com MAP3079 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC Output Power Drain Efficiency Power Gain Threshold Voltage Drain Cut-off Current Gate-Source Leakage Current SYMBOL PO D GP Vth IDSS IGSS -- TEST CONDITION VDS = 4.8V Iidle = 800 mA (VGS = adjust) f = 915MHz, Pi = 26dBmW ZG = ZL = 50 VDS = 4.8 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V VDS = 6.5 V, f = 915 MHz Pi = 26dBmW PO = 33.0dBmW (VGS = adjust) VSWR LOAD 10: 1 all phase MIN 33.0 40.0 7.0 0.30 -- -- TYP. -- -- -- -- -- -- MAX -- -- -- 1.30 10 5 UNIT dBmW % dB V A A Load Mismatch No Degradation -- CAUTION This transistor is the electrostatic sensitive device. Please handle with caution. RF OUTPUT POWER TEST FIXTURE Tel:+86-755-82973806 Fax:+86-755-82973550 E-mail: sales@hoperf.com 3 http://www.hoperf.com |
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