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ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. ID=-2.6A FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23-6 package SOT23-6 APPLICATIONS * DC - DC converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXM62P03E6TA ZXM62P03E6TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8 embossed 8 embossed QUANTITY PER REEL 3,000 10,000 Pinout DEVICE MARKING 2P03 Top view ISSUE 1 - OCTOBER 2005 1 SEMICONDUCTORS ZXM62P03E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V DSS V GS LIMIT 20 12 1.5 1.2 7.4 0.54 7.4 625 5 806 6.4 -55 to +150 UNIT V V A A A A mW mW/C mW mW/C C Continuous Drain Current (V GS =4.5V; T A =25C)(a) I D (V GS =4.5V; T A =70C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range I DM IS I SM PD PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 73 UNIT C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - OCTOBER 2005 2 SEMICONDUCTORS ZXM62P03E6 CHARACTERISTICS ISSUE 1 - OCTOBER 2005 3 SEMICONDUCTORS ZXM62P03E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) -1.0 0.15 0.23 1.1 -30 -1 100 V A nA V S I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250A, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) V SD t rr Q rr 19.9 13 t d(on) tr t d(off) tf Qg Q gs Q gd 2.8 6.4 13.9 10.3 C iss C oss C rss 330 120 45 g fs V GS =-10V, I D =-1.6A V GS =-4.5V, I D =-0.8A V DS =-10V,I D =-0.8A pF pF pF V DS =-25 V, V GS =0V, f=1MHz ns ns ns ns 10.2 1.5 3 nC nC nC V DS =-24V,V GS =-10V, I D =-1.6A (Refer to test circuit) V DD =-15V, I D =-1.6A R G =6.2, R D =25 (Refer to test circuit) -0.95 V ns nC T j =25C, I S =-1.6A, V GS =0V T j =25C, I F =-1.6A, di/dt= 100A/s (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 4 SEMICONDUCTORS ZXM62P03E6 TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 5 SEMICONDUCTORS ZXM62P03E6 TYPICAL CHARACTERISTICS 600 Vgs=0V f=1Mhz -VGS - Gate-Source Voltage (V) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 VDS=-15V VDS=-24V ID=-1.6A C - Capacitance (pF) 500 400 300 200 100 0 Ciss Coss Crss 0.1 1 10 100 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge ISSUE 1 - OCTOBER 2005 6 SEMICONDUCTORS ZXM62P03E6 PACKAGE OUTLINE PAD LAYOUT DETAILS 0.95 0.037 1.06 0.042 2.2 0.087 0.65 0.026 DIM A A1 A2 b C D E E1 L e e1 L 0 Millimeters Min. 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF 10 0 Max. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60 Min. 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 Inches Max. 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002 mm inches 0.037 REF 0.074 REF 10 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 7 SEMICONDUCTORS |
Price & Availability of ZXM62P03E6
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