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NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W,
Features
* * * *
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb-Free and RoHS Compliant
VDSS 620 V Rating Drain-to-Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate-to-Source Voltage Single Pulse Avalanche Energy, ID = 6.0 A ESD (HBM) (JESD 22-A114) RMS Isolation Voltage (t = 0.3 sec., R.H. 30%, TA = 25C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 31 30 113 3000 - NDF06N62Z NDP06N62Z Unit V A A A 113 W V mJ V V
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RDS(ON) (TYP) @ 3 A 0.98
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
620 6.0 (Note 1) 3.8 (Note 1) 20 (Note 1)
N-Channel D (2)
G (1)
S (3) TO-220FP CASE 221D STYLE 1
MARKING DIAGRAM
dv/dt IS TL TJ, Tstg
4.5 (Note 2) 6.0 260 -55 to 150
V/ns A C C TO-220AB CASE 221A STYLE 5 A Y WW G NDF06N62ZG or NDP06N62ZG AYWW Gate Source
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. ISD = 6.0 A, di/dt 100 A/ms, VDD BVDSS, TJ = +150C
Drain = Location Code = Year = Work Week = Pb-Free Package
ORDERING INFORMATION
Device NDF06N62ZG NDP06N62ZG Package TO-220FP (Pb-Free) TO-220AB (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail In Development
(c) Semiconductor Components Industries, LLC, 2010
April, 2010 - Rev. 0
1
Publication Order Number: NDF06N62Z/D
NDF06N62Z, NDP06N62Z
THERMAL RESISTANCE
Parameter Junction-to-Case (Drain) Junction-to-Ambient Steady State (Note 3) Symbol RqJC RqJA NDF06N62Z 4.0 50 NDP06N62Z 1.1 50 Unit C/W
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-to-Source Leakage Current VGS = 0 V, ID = 1 mA Reference to 25C, ID = 1 mA VDS = 620 V, VGS = 0 V VGS = 20 V VGS = 10 V, ID = 3.0 A VDS = VGS, ID = 100 mA VDS = 15 V, ID = 3.0 A 25C 125C IGSS RDS(on) VGS(th) gFS Ciss Coss Crss Qg VDD = 310 V, ID = 6.0 A, VGS = 10 V Qgs Qgd Vgp Rg td(on) VDD = 310 V, ID = 6.0 A, VGS = 10 V, RG = 5 tr td(off) tf 3.0 5.0 923 106 23 32 6.3 17 6.3 3.2 13 19 32 28 V W ns nC 0.98 BVDSS DBVDSS/ DTJ IDSS 620 0.6 1 50 10 1.2 4.5 mA W V S pF V V/C mA Test Conditions Symbol Min Typ Max Unit
Gate-to-Source Forward Leakage ON CHARACTERISTICS (Note 4) Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Plateau Voltage Gate Resistance RESISTIVE SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
SOURCE-DRAIN DIODE CHARACTERISTICS (TC = 25C unless otherwise noted) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 3. Insertion mounted 4. Pulse Width 380 ms, Duty Cycle 2%. IS = 6.0 A, VGS = 0 V VGS = 0 V, VDD = 30 V IS = 6.0 A, di/dt = 100 A/ms VSD trr Qrr 338 2.0 1.6 V ns mC
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2
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
12 TJ = 25C ID, DRAIN CURRENT (A) 10 8 6 4 2 0 15 V 10 V 12 VDS 30 V ID, DRAIN CURRENT (A) 10 8 6 4 2 0 TJ = -55C 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 150C TJ = 25C
7V
6.8 V 6.6 V 6.4 V 6.2 V 6.0 V 5.8 V 5.6 V
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2 ID = 3 A TJ = 25C 1.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.75
Figure 2. Transfer Characteristics
TJ = 25C 1.5 1.25 VGS = 10 V 1 0.75 0.5
1
0.5
0
5
6
7 VGS (V)
8
9
10
0
2
4
6
8
10
12
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. VGS
2.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.2 1.8 1.4 1.0 0.6 0.2 -50 ID = 3 A VGS = 10 V BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V) 1.15 1.1
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
ID = 1 mA 1.05 1.0 0.95 0.9 -50
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. On-Resistance Variation with Temperature
Figure 6. BVDSS Variation with Temperature
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3
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
100 VGS = 0 V IDSS, LEAKAGE (mA) TJ = 150C C, CAPACITANCE (pF) 10 1500 2000 VGS = 0 V TJ = 25C
1
1000
Ciss
0.1
TJ = 100C
500
Coss Crss
0.01
0
100
200
300
400
500
600
0
0
50
100
150
200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Drain-to-Source Leakage Current vs. Voltage
VGS, GATE-TO-SOURCE VOLTAGE (V) 20 QT VDS 200 Qgs 5 Qgd VGS VDS = 310V TJ = 25C ID = 6 A 0 5 10 15 20 25 30 100 400 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
15
300
VDD = 310 V ID = 6 A VGS = 10 V t, TIME (ns) 100
td(off) tr tf td(on)
10
10
0
0 35
1
1
10 RG, GATE RESISTANCE (W)
100
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
6 IS, SOURCE CURRENT (A) 5 4 3 2 1 0 0.4 VGS = 0 V TJ = 25C 100
Figure 10. Resistive Switching Time Variation vs. Gate Resistance
ID, DRAIN CURRENT (A)
10 dc 1
10 ms 1 ms
100 ms
10 ms
0.1
VGS = 10 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 1 10 100 1000
0.5
0.6
0.7
0.8
0.9
1.0
0.01
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
Figure 12. Maximum Rated Forward Biased Safe Operating Area for NDF06N62Z
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4
NDF06N62Z, NDP06N62Z
TYPICAL CHARACTERISTICS
10
1.0 R(t) (C/W)
50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0%
0.1
0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000 RqJC = 4.0C/W Steady State
Figure 13. Thermal Impedance for NDF06N62Z
LEADS
HEATSINK 0.110 MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NDF06N62Z, NDP06N62Z
PACKAGE DIMENSIONS
TO-220 FULLPAK CASE 221D-03 ISSUE J
-T- F Q A
123 SEATING PLANE
-B-
C S U
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88
H K
-Y-
G N L D
3 PL M
J R
DIM A B C D F G H J K L N Q R S U
0.25 (0.010)
B
M
Y
STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE
TO-220AB CASE 221A-09 ISSUE AE
-T- B
4 SEATING PLANE
F
T
C S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
Q
123
A U K
H Z L V G D N
R J
STYLE 5: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NDF06N62Z/D

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