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 2SB766A
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1
2
3
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value -60 -50 -5 -1 500 150 -55-150 Units V V V A mW
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector-emitter saturation voltage Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Test IC=-10A, IE=0 IC=-2mA, IB=0 IE=-10A, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-500mA VCE=-5V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA, f=200MHz VCB=-10V, IE=0, f=1MHz conditions MIN -60 -50 -5 TYP MAX UNIT V V V A A
-0.2 -0.85 200 20
-0.1 -0.1 340
85 50
-0.4 -1.2 V V MHz pF
-
30
CLASSIFICATION OF Rank Range Marking
hFE Q 85-170 BQ R 120-240 BR S 170-340 BS
WEITRON
http://www.weitron.com.tw
1/3
26-Dec-08
2SB766A
WEITRON
http://www.weitron.com.tw
2/3
26-Dec-08
2SB766A
SOT-89 Outline Dimensions
unit:mm
E G
Dim
A
SOT-89
J
C
H
K L
B
D
A B C D E G H J K L
Min Max 1.600 1.400 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 3.100 2.900
WEITRON
http://www.weitron.com.tw
3/3
26-Dec-08


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