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2N6661CSM4
MECHANICAL DATA
Dimensions in mm (inches)
5.59 0.13 (0.22 0.005) 0.25 0.03 (0.01 0.001) 1.40 0.15 (0.055 0.006)
0.64 0.08 (0.025 0.003)
0.23 rad. (0.009) 3 2
4
1
0.23 min. (0.009)
N-CHANNEL ENHANCEMENT MODE MOSFET VDSS 90V ID 0.9A RDS(on) 4.0
* * * * Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain
3.81 0.13 (0.15 0.005)
1.27 0.05 (0.05 0.002)
1.02 0.20 (0.04 0.008)
2.03 0.20 (0.08 0.008)
FEATURES
CERAMIC LCC3 PACKAGE (MO-041BA)
PAD 1 - DRAIN PAD 2 - N/C (Underside View) PAD 3 - SOURCE PAD 4 - GATE
DESCRIPTION
This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening options are available.
CASE
ABSOLUTE MAXIMUM RATINGS T
VDS ID IDM VGS Ptot(1) Ptot(2) Tj,Tstg Drain - Source Voltage Drain Current Drain Current
= 25C unless otherwise stated 90V 0.9A 0.7A 3A 20V 6.25W 0.050W/C 0.5W -55 to +150C
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1)
Gate - Source Voltage Total Power Dissipation at Tmb 25C De-rate Linearly above 25C Total Power Dissipation at Tamb 25C Operating and Storage Junction Temperature Range
THERMAL DATA
Rthj-mb Rthj-amb NOTES: Thermal Resistance Junction - Mounting base Thermal Resistance Junction - Ambient Max Max 20 250 C/W C/W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width 380S, Duty Cycle , 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 3779, ISSUE 3
2N6661CSM4
STATIC ELECTRICAL RATINGS (T
Parameter
V(BR)DSS VGS(th) Drain - Source Breakdown Voltage
case
=25C unless otherwise stated)
Test Conditions
VGS = 0V VDS = VGS ID = 1.0A ID = 1.0mA TC = 125C TC = -55C VGS = 20V VDS = 72V VDS = 15V VGS = 5V VGS = 10V VGS = 5V VDS = 0V TC = 125C VGS = 0V TC = 125C VGS = 10V ID = 0.3A ID = 1.0A TC = 125C ID = 0.3A ID = 1.0A TC = 125C ID = 0.475A Is = 0.86A
Min. Typ.
90 0.8 0.3 1.5 170 0.7 -
Max.
2 2.5 100 500 1.0 100 5.3 4 7.5 1.6 4 7.5 1.4
Unit
V
Gate - Source threshold Voltage
IGSS IDSS ID(on) RDS(on)
Gate - Source Leakage Current
nA A A
Zero Gate Voltage Drain Current On - State Drain Current (note 2) Drain - Source On Resistance (note 3)
VDS(on) gFS VSD
Drain - Source On Voltage (note 2)
VGS = 10V VDS = 7.5V VGS = 0V
V ms V
Forward Transconductance (Note 2) Diode Forward Voltage (Note 2)
DYNAMIC CHARACTERISTICS
Ciss Coss Crss Td(on) Td(off) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Turn-Off Delay Time VDD = 25V RGS = 50 ID = 1A
(Note 2)
VDS = 25V f = 1.0MHz VGS = 0V -
-
50 40 10 10 10 ns pF
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 3779, ISSUE 3

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