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AUTOMOTIVE GRADE
PD-96302
Features
P-Channel Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
HEXFET(R) Power MOSFET
AUIRFR6215
-150V 0.295: -13A
V(BR)DSS RDS(on) max. ID
D
G S
Description
Specifically designed for Automotive applications of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
S D G D-Pak AUIRFR6215
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-13 -9.0 -44 110 0.71 20 310 -6.6 11 5.0 -55 to + 175 300
Units
A W W/C V mJ A mJ V/ns C
ch
ch
dh
e
ch
Thermal Resistance
Parameter
RJC Junction-to-Case Junction-to-Ambient(PCB mount)i RJA RJA Junction-to-Ambient HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
hj
Typ.
--- --- ---
Max.
1.4 50 110
Units
C/W
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1
04/13/10
AUIRFR6215
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) gfs IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-150 --- --- --- -2.0 3.6 --- --- --- --- --- -0.20 --- --- --- --- --- --- --- --- --- --- 0.295 0.58 -4.0 --- -25 -250 100 -100 V
Conditions
VGS = 0V, ID = -250A VGS = -10V, ID = -6.6A VGS = -10V, ID
V/C Reference to 25C, ID = -1mA V S A nA
J
VDS = VGS, ID = -250A VDS = -50V, ID = -6.6A VDS = -150V, VGS = 0V VGS = 20V VGS = -20V
f = -6.6A f T = 150C h
VDS = -120V, VGS = 0V, TJ = 150C
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 14 36 53 37 4.5 7.5 860 220 130 66 8.1 35 --- --- --- --- --- --- --- --- --- pF nH ns nC ID = -6.6A VDS =-120V
Conditions
VGS = -10V, See Fig 6 and 13 VDD = -75V ID = -6.6A RG = 6.8 RD = 12, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig.5
G
fh
fh
D S
h
D
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ah Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 160 1.2 -13 A -44 -1.6 240 1.7 V ns
Conditions
MOSFET symbol showing the integral reverse
G S
nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode. TJ = 25C, IS =-6.6A, VGS = 0V TJ = 25C, IF =-6.6A di/dt = 100A/s
f
fh
Notes
through are on page 10
2
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AUIRFR6215
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D PAK Machine Model Human Body Model Charged Device Model MSL1 Class M4 AEC-Q101-002 Class H3A AEC-Q101-001 Class C5 AEC-Q101-005 Yes
Moisture Sensitivity Level
ESD
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR6215
100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
-ID , Drain-to-Source Current (A)
10
-ID , Drain-to-Source Current (A)
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
10
-4.5V 20s PULSE WIDTH TC = 175C
1 10
-4.5V
1 1 10
20s PULSE WIDTH Tc = 25C A
100
1
100
A
-V , Drain-to-Source Voltage (V) DS
-V , Drain-to-Source Voltage (V) DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance (Normalized)
100
2.5
I D = -11A
-ID , Drain-to-Source Current (A)
2.0
TJ = 25C TJ = 175C
10
1.5
1.0
0.5
1 4 5 6 7
VDS = -50V 20s PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = -10V
80 100 120 140 160 180
A
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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AUIRFR6215
2000
1600
-VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = -6.6A
16
VDS = -120V VDS = -75V VDS = -30V
C, Capacitance (pF)
Ciss
1200
12
Coss
800
8
Crss
400
4
0 1 10 100
A
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80
A
-VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10s
10
TJ = 175C TJ = 25C
-I D , Drain Current (A)
10
100s
1
1ms
0.1 0.2 0.6 1.0 1.4
VGS = 0V
A
1 1
TC = 25C TJ = 175C Single Pulse
10 100
10ms
1.8
1000
A
-VSD , Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
AUIRFR6215
14 12
VDS VGS RG -10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
-ID , Drain Current (A)
10 8 6 4 2
VGS
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
0
10%
25
50
75
100
125
150
175
TC , Case Temperature
( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (ZthJC )
1
D = 0.50 0.20 0.10
P DM
0.1
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t /t
t
1 t2
1
2
0.01 0.00001
2. Peak TJ = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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-
V DD
A
1
AUIRFR6215
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
800
TOP BOTTOM
600
RG
D.U.T
IAS
-20V
DRIVER
0.01
VDD A
ID -2.7A -4.7A -6.6A
tp
400
15V
200
Fig 12a. Unclamped Inductive Test Circuit
I AS
0 25 50 75 100 125 150
175
A
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
QGS
QGD
D.U.T.
-
-10V
VDS
7
AUIRFR6215
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
8
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AUIRFR6215
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AURFR6215
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFR6215
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 14mH R G = 25, IAS = -6.6A. (See Fig.12) ISD -6.6A, di/dt -620A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Uses IRF6215 data and test conditions When mounted on 1" square PCB (FR-4 or G-10 Material ) For recommended footprint and soldering techniques refer to application note #AN-994
R is measured at TJ approximately 90C.
10
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AUIRFR6215
Ordering Information
Base part AUIRFR6215 AUIRFR6215 AUIRFR6215 AUIRFR6215 Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRFR6215 AUIRFR6215TR AUIRFR6215TRL AUIRFR6215TRR
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11
AUIRFR6215
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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