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| IPI90R500C3 CoolMOSTM Power Transistor Features * Lowest figure-of-merit R ON x Qg * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge Product Summary V DS @ T J=25C R DS(on),max @ T J= 25C Q g,typ 900 0.5 68 V nC PG-TO262 CoolMOSTM 900V is designed for: * Quasi Resonant Flyback / Forward topologies * PC Silverbox and consumer applications * Industrial SMPS Type IPI90R500C3 Package PG-TO262 Marking 9R500C Maximum ratings, at T J=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T J, T stg T C=25 C T C=25 C I D=2.2 A, V DD=50 V I D=2.2 A, V DD=50 V Value 11 6.8 24 388 0.74 2.2 50 20 30 156 -55 ... 150 W C A V/ns V mJ Unit A Rev. 1.0 page 1 2008-07-29 IPI90R500C3 Maximum ratings, at T J=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 6.6 23 4 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.8 62 K/W T sold - - 260 C Electrical characteristics, at T J=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 A V GS(th) I DSS V DS=V GS, I D=0.74 mA V DS=900 V, V GS=0 V, T j=25 C V DS=900 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=6.6 A, T j=25 C V GS=10 V, I D=6.6 A, T j=150 C Gate resistance RG f =1 MHz, open drain 900 2.5 3 3.5 1 A V - 10 0.39 100 0.5 nA - 1.1 1.3 Rev. 1.0 page 2 2008-07-29 IPI90R500C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related 5) Effective output capacitance, time related 6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2) 3) 4) 5) 6) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 1700 83 52 - pF V GS=0 V, V DS=0 V to 500 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=6.6 A, R G=30.9 200 70 20 400 25 ns Q gs Q gd Qg V plateau V DD=400 V, I D=6.6 A, V GS=0 to 10 V - 8 29 68 4.6 tbd - nC V V SD t rr Q rr I rrm V GS=0 V, I F=6.6 A, T j=25 C - 0.8 480 8.5 31 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T J,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISDID, di/dt 200 A/s, VDClink=400V, Vpeak page 3 2008-07-29 IPI90R500C3 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 160 102 limited by on-state resistance 140 1 s 10 s 120 101 100 1 ms 100 s P tot [W] I D [A] 80 10 ms DC 60 100 40 20 10-1 0 25 50 75 100 125 150 1 10 100 1000 0 T C [C] V DS [V] 3 Max. transient thermal impedance ZthJC=f(tP) parameter: D=t p/T 100 4 Typ. output characteristics I D=f(V DS); T J=25 C parameter: V GS 35 20 V 10 V 30 0.5 8V 25 0.2 6V 5.5 V Z thJC [K/W] 20 10-1 0.1 I D [A] 15 5V 0.05 0.02 0.01 single pulse 10 4.5 V 5 4V 10-2 10-5 10-4 10-3 10-2 10-1 0 0 5 10 15 20 25 t p [s] V DS [V] Rev. 1.0 page 4 2008-07-29 IPI90R500C3 5 Typ. output characteristics I D=f(V DS); T J=150 C parameter: V GS 15 10 V 8V 5V 20 V 6V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T J=150 C parameter: V GS 10 8 10 4.5 V R DS(on) [] 6 I D [A] 4 10 V 5 4V 2 4V 4.5 V 5V 4.8 V 0 0 5 10 15 20 25 0 0 5 10 15 20 25 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T J); I D=6.6 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); V DS=20V parameter: T J 1.5 35 25 C 30 1.2 25 0.9 R DS(on) [] 20 I D [A] 0.6 15 98 % 150 C typ 10 0.3 5 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T J [C] V GS [V] Rev. 1.0 page 5 2008-07-29 IPI90R500C3 9 Typ. gate charge V GS=f(Q gate); I D=6.6 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T J 102 8 25 C, 98% 101 6 150 C, 98% V GS [V] I F [A] 400 V 720 V 25 C 150 C 4 100 2 0 0 20 40 60 80 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T J); I D=2.2 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T J); I D=0.25 mA 400 1050 1000 300 200 V BR(DSS) [V] 25 50 75 100 125 150 E AS [mJ] 950 900 100 850 0 800 -60 -20 20 60 100 140 180 T J [C] T J [C] Rev. 1.0 page 6 2008-07-29 IPI90R500C3 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 10000 8 Ciss 1000 6 100 Coss E oss [J] 300 400 500 600 C [pF] 4 10 Crss 2 1 0 100 200 0 0 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 1.0 page 7 2008-07-29 IPI90R500C3 Definition of diode switching characteristics Rev. 1.0 page 8 2008-07-29 IPI90R500C3 PG-TO262 Outlines Dimensions in mm/inches Rev. 1.0 page 9 2008-07-29 IPI90R500C3 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2008-07-29 |
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