 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IPD90N06S3L-07 OptiMOS(R)-T Power-Transistor Product Summary V DS R DS(on),max ID 55 7.4 90 V m A Features * N-channel - Logic Level - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (RoHS compliant) * Ultra low Rds(on) * 100% Avalanche tested PG-TO252-3-11 Type IPD90N06S3L-07 Package PG-TO252-3-11 Marking QN06L07 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage2) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 C T C=25 C I D=45 A Value 90 64 360 210 90 16 107 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.1 page 1 2009-05-20 IPD90N06S3L-07 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=55 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=5 V, I D=29 A V GS=10 V, I D=43 A 55 1.2 1.7 0.01 2.2 1 A V 1.4 62 40 K/W - 1 1 11.0 6.0 100 100 13.7 7.4 nA m Rev. 1.1 page 2 2009-05-20 IPD90N06S3L-07 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current1) Diode pulse current1) Diode forward voltage Reverse recovery time1) Reverse recovery charge1) IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=27.5 V, I F=50A, di F/dt =100 A/s 0.6 0.9 40 50 90 360 1.3 V ns nC A Q gs Q gd Qg V plateau V DD=11 V, I D=50 A, V GS=0 to 10 V 32 19 90 4.8 42 28 110 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=80 A, R G=5.1 V GS=0 V, V DS=25 V, f =1 MHz 6500 810 780 17 42 43 44 7480 1220 1170 ns pF 1) 2) 3) Defined by design. Not subject to production test. Qualified at -5V and +16V. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2009-05-20 IPD90N06S3L-07 1 Power dissipation P tot = f(T C); V GS 4 V 2 Drain current I D = f(T C); V GS 4 V 120 100 100 80 80 60 P tot [W] 60 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 40 20 0 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 s 10 s 100 0.5 100 1 ms 100 s Z thJC [K/W] 0.1 I D [A] 10-1 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.1 page 4 2009-05-20 IPD90N06S3L-07 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 200 10 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C parameter: V GS 20 4V 5V 175 150 18 6V 16 6V 14 R DS(on) [m] 125 5.5 V 12 10 8 6 4 2 0 8V 10 V I D [A] 100 75 5V 4.5 V 50 4V 25 0 0 2 4 3.5 V 6 8 10 0 20 40 60 80 100 120 140 160 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 4 V parameter: T j 160 140 -55 C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 43 A; V GS = 10 V 12 120 25 C 10 175 C 80 60 40 20 0 0 1 2 3 4 5 6 R DS(on) [m] 100 I D [A] 8 6 4 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.1 page 5 2009-05-20 IPD90N06S3L-07 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 3 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz Ciss 10 4 2.5 Coss 2 V GS(th) [V] C [pF] 600A Crss 1.5 60A 103 1 0.5 0 -60 -20 20 60 100 140 180 0 5 10 15 20 25 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I AV = f(t AV) parameter: T j(start) 100 25C 100C 150C 102 I AV [A] 175 C 25 C I F [A] 10 10 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.1 page 6 2009-05-20 IPD90N06S3L-07 13 Typical avalanche Energy E AS = f(T j) parameter: I D 500 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 65 22.5 A 400 60 V BR(DSS) [V] 300 E AS [mJ] 55 45 A 200 100 90 A 50 0 0 50 100 150 200 45 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 50 A pulsed parameter: V DD 12 16 Gate charge waveforms V GS 11 V 44 V 10 Qg 8 V plateau V GS [V] 6 V g s(th) 4 2 Q g (th) Q gs 0 50 100 150 Q sw Q gd Q gate 0 Q gate [nC] Rev. 1.1 page 7 2009-05-20 IPD90N06S3L-07 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2009-05-20 IPD90N06S3L-07 Revision History Version Date Changes Correction of marking and update 15.06.2009 of disclaimer Data Sheet version 1.1 Data Sheet version 1.1 15.06.2009 Correction of package name Rev. 1.1 page 9 2009-05-20 |
Price & Availability of IPD90N06S3L-07
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |