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| HSC226 SILICON SCHOTTKY BARRIER DIODE Features * Low reverse current, low capacitance * Ultra small flat package is suitable for surface mount design PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 W Top View Marking Code: "W" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Forward Current Non-Repetitive Peak Forward Surge Current Junction Temperature Range Storage Temperature Range Symbol VRRM IF IFSM Tj Ts Value 25 50 200 125 - 55 to + 125 Unit V mA mA O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 5 mA Reverse Current at VR = 20 V Capacitance at VR = 1 V, f = 1 MHz Symbol VF Max. 0.33 0.38 0.45 2.8 Unit V IR C A pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 23/11/2006 HSC226 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 23/11/2006 HSC226 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND A C HE D A E bp UNIT mm A 0.70 0.60 bp 0.4 0.3 C 0.135 0.127 D 1.25 1.15 E 0.85 0.75 HE 1.7 1.5 V 0.1 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 23/11/2006 |
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