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DMG4466SSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
* * * * * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Low Gate Resistance Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate)
SO-8
S S S G
TOP VIEW TOP VIEW Internal Schematic
D D D D
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 85C ID IDM IAR EAR Value 30 25 10 6 60 16 12.8 Unit V V A A A mJ
Characteristic
Continuous Drain Current (Note 3)
Steady State
Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25C (Note 3) Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 1.42 88.4 -55 to +150
Unit W C/W C
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. Device mounted on FR-4 substrate PC board with minimum recommended pad layout in a still air environment @ TA = 25C. The value in any given application depends on the user's specific board design. 4. Repetitive rating, pulse width limited by junction temperature. 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25C
DMG4466SSS
Document number: DS32137 Rev. 3 - 2
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(c) Diodes Incorporated
DMG4466SSS
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf
Min 30 1.0 0.4 -
Typ 1.45 15 25 2.5 0.69 478.9 96.7 61.4 1.1 5.0 10.5 1.8 1.6 2.9 7.9 14.6 3.1
Max 1 100 2.4 23 33 1 1.6 8 17 -
Unit V A nA V m S V pF pF pF nC nC nC ns ns ns ns
Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A VDS = 5V, ID = 10A VGS = 0V, IS = 1A VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 10A
VGS = 10V, VDS = 15V, RG = 3, RL = 1.5
6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.
30
VGS = 10V
20
VDS = 5V
25 ID, DRAIN CURRENT (A)
20
VGS = 4.0V
15
VGS = 3.5V
ID, DRAIN CURRENT (A)
VGS = 4.5V
15
10
VGS = 150C VGS = 125C
10
5
VGS = 85C VGS = 25C VGS = -55C
5
VGS = 2.5V
VGS = 3.0V
0 0 0.5 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 1 5
0 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4
DMG4466SSS
Document number: DS32137 Rev. 3 - 2
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September 2010
(c) Diodes Incorporated
DMG4466SSS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
0.04
VGS = 10V
0.04
0.03
TA = 150C TA = 125C TA = 85C
VGS = 3.5V
0.03
VGS = 4.5V
0.02
0.02
VGS = 10V
TA = 25C
0.01
TA = -55C
0.01
0 0
5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
30
0
0
5
10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
30
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.5
VGS = 4.5V ID = 5A VGS = 10V ID = 10A
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
1.7
0.06
0.05
1.3
0.04
VGS = 4.5V ID = 5A
1.1
0.03
0.9
0.02
VGS = 10V ID = 10A
0.7 0.5 -50
0.01
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature 2.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.8
16 20 18 IS, SOURCE CURRENT (A)
Fig. 6 On-Resistance Variation with Temperature
1.6 1.4 1.2 1.0 0.8
ID = 250A ID = 1mA
14 12 10 8 6 4 2
TA = 25C
0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current
1.2
DMG4466SSS
Document number: DS32137 Rev. 3 - 2
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September 2010
(c) Diodes Incorporated
DMG4466SSS
1,000
f = 1MHz
10,000
IDSS, LEAKAGE CURRENT (nA)
Ciss
C, CAPACITANCE (pF)
1,000
T A = 150C
T A = 125C
100
Coss Crss
100
T A = 85C
10
TA = 25C
10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30
1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30
10 VGS, GATE-SOURCE VOLTAGE (V)
8
6
VDS = 15V ID = 10A
4
2
0
0
2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics
12
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05 D = 0.9 RJA(t) = r(t) * RJA RJA = 90C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response
10
100
1,000
DMG4466SSS
Document number: DS32137 Rev. 3 - 2
4 of 6 www.diodes.com
September 2010
(c) Diodes Incorporated
DMG4466SSS
Ordering Information
Part Number DMG4466SSS-13
Notes:
(Note 8) Case SO-8 Packaging 2500 / Tape & Reel
8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8 5
Logo
G4466SS YY WW
Part no.
Week: 01 ~ 53 Year: "09" = 2009
1 4
Package Outline Dimensions
E1 E A1 L
Gauge Plane Seating Plane
Detail `A'
h 45 A2 A A3 e D b 7~9
Detail `A'
SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm
Suggested Pad Layout
X
0.254
C1 C2 Y
Dimensions X Y C1 C2
Value (in mm) 0.60 1.55 5.4 1.27
DMG4466SSS
Document number: DS32137 Rev. 3 - 2
5 of 6 www.diodes.com
September 2010
(c) Diodes Incorporated
DMG4466SSS
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMG4466SSS
Document number: DS32137 Rev. 3 - 2
6 of 6 www.diodes.com
September 2010
(c) Diodes Incorporated

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