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PJSRV05-4
LOW CAPACITANCE TVS DIODE ARRAY
The PJSRV05-4 has a low capacitance of 2.1pF and operates with virtually no insertion loe to 1GHz. This ma s kes the device ideal for protection of high-speed data line such as USB2.0,firewire,DVI,and gigabit Ethernet interfaces. s The low capacitance array configuration allows the user to protect Four high-speed data or tra smission lines.The n low inductance construction minimizes voltage overshoot during high current surges. They may be used to meet the ESD immunity requirements of IEC61000-4-2,Level 4(15kV air,8kV contact discharge). VOLTAGE FEATURES
* IEC61000-4-2 ESD 15kV Air, 8kV Contact compliance * Low leakage current,maximum of 1A at rated voltage * Low clamping voltage * Peak power dissipation of 350W under 8/20 s waveform * Protect four I/O lines * In compliance with EU RoHS 2002/95/EC directives
5 Volts
POWER
350Watts
MECHANICAL DATA
* Case: SOT23-6L, Plastic * Terminals: Solderable per MIL-STD-750, Method 2026 * Weight: approximately 0.013gram * Marking : 054
APPLICATIONS
* USB 2.0 Power and Date Line Protection * Video Graphics Cards * Mounitors and Flat Panel Displays * Digital Vedio Interface (DVI) * 10/100/1000 Ethernet * ATM Interfaces
MAXIMUM RATINGS
Rating Peak Pulse Power (8/20 s Waveform) Peak Pulse Current (8/20 s Waveform) ESD Voltage (HBM Contact) O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Symbol PPP I PPM VESD TJ , T S TG
Value 350 12 >8 -55 to +150
Units W A kV
O
C
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PJSRV05-4
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20s) Clamping Voltage (8/20s) Off State Junction Capacitance Symbol VWRM VBR IR VC VC CJ I BR=1mA, PIN 5 to 2 VR=5V, PIN 5 to 2 I PP =1A,ANY I/O pin to pin 2 I PP =5A,ANY I/O pin to pin 2 0Vdc, f=1.0MHZ between I/O lines and GND 0Vdc, f=1.0MHZ between I/O lines Condition Min. 6 Typ. 1.2 1.1 Max. 5 5 12 17 1.2 Unit V V A V V pF
Off State Junction Capacitance
CJ
-
0.55
0.60
pF
REV.0.2-JUL.8.2009
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PJSRV05-4
PEAK POWER DISSIPATION (%)
100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175
o
% OF PEAK PULSE CURRENT
100 90 80 70 60 50 40 30 20 10 0 0
tr
PEAK VALUE I RSM @8 m s PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY=8 m s HALF VALUE I RSM /2@20 m s
tp
200
20
40
60
80
T A ,AMBIENT TEMPERATURE( C)
t,TIME( m s)
Fig 1.Power Derating Curve
JUNCTION CAPACITA NCE(pF)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 1 2 3 4
Fig 2. 8x20 m s Pulse Waveform
CLAMPING VOLTAGE(V )
20 18 16 14 12 10 8 6 4 2 0
0
10
20
30
40
50
V BR ,REVERSE VOLTAGE (V)
PEAK PULSE CURRENT(A)
Fig 3. Junction Capacitance vs Reverse Voltage
10
Fig 4. Clamping Voltage vs Peak Pulse Current (8x20 Waveform)
3.5
Forward Voltage (V)
Peak Pulse Power-P PP (kW)
3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7
Waveform Parameters : tr=8 m s td=20 m s
1
0.1
0.01 0.1
1
10
100
1000
PULSE DURATION-tp( m s)
PEAK PULSE CURRENT(A)
Fig 5. Non-Repetitive Peak Pulse vs. Pulse Time
Fig 6. Forward Voltage vs. Forward Current
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PJSRV05-4
MOUNTING PAD LAYOUT
ORDER INFORMATION
* Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7" plastic Reel
LEGAL STATEMENT Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
REV.0.2-JUL.8.2009
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