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Freescale Semiconductor Technical Data
Document Number: MRF8P26080H Rev. 0, 12/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 2570 MHz 2595 MHz 2620 MHz Gps (dB) 15.4 15.2 15.0 D (%) 39.1 38.2 36.9 Output PAR (dB) 6.8 6.8 6.8 ACPR (dBc) --33.6 --36.0 --40.0
MRF8P26080HR3 MRF8P26080HSR3
2500-2700 MHz, 14 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 3 dB Compression Point 83 Watts CW Features * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 13.
CASE 465M-01, STYLE 1 NI-780-4 MRF8P26080HR3
CASE 465H-02, STYLE 1 NI-780S-4 MRF8P26080HSR3
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CW Operation @ TC = 25C Derate above 25C Symbol VDSS VGS VDD Tstg TC TJ CW Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 140 1.26 Unit Vdc Vdc Vdc C C C W W/C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P26080HR3 MRF8P26080HSR3 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 77C, 14 W CW, 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, 2620 MHz Case Temperature 90C, 80 W CW(3), 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, 2620 MHz Symbol RJC Value (1,2) 0.88 0.56 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(4)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (4) Gate Threshold Voltage (VDS = 10 Vdc, ID = 75 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 300 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.75 Adc)
Adc Adc Adc
VGS(th) VGS(Q) VDS(on)
1.0 1.9 0.1
1.8 2.6 0.23
2.5 3.4 0.3
Vdc Vdc Vdc
Functional Tests (5,6) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 W Avg., f = 2620 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured on 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio
(6) (In
Gps D PAR ACPR
13.8 34.0 6.4 --
15.0 36.9 6.8 --40.0
16.8 -- -- --33.0
dB % dB dBc
Typical Broadband Performance Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 2570 MHz 2595 MHz 2620 MHz Gps (dB) 15.4 15.2 15.0 D (%) 39.1 38.2 36.9 Output PAR (dB) 6.8 6.8 6.8 ACPR (dBc) --33.6 --36.0 --40.0
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Each side of device measured separately. 5. Part internally matched both on input and output. 6. Measurement made with device in a Symmetrical Doherty configuration. (continued)
MRF8P26080HR3 MRF8P26080HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, 2570--2620 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point, CW IMD Symmetry @ 12 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 50 MHz Bandwidth @ Pout = 14 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) 1. Measurement made with device in a Symmetrical Doherty configuration. P1dB P3dB IMDsym -- -- -- 54 83 40 -- -- -- W W MHz
VBWres GF G P1dB
-- -- -- --
70 0.5 0.01 0.002
-- -- -- --
MHz dB dB/C dB/C
MRF8P26080HR3 MRF8P26080HSR3 RF Device Data Freescale Semiconductor 3
C17 C9 VGA C1 C3 CUT OUT AREA Z1 C C15 C5 C7 R2 C11 VDA C13
MRF8S26080H Rev. 3A
P
C16 C6
R1 C4
VGB C10 R3
C2
C8 C14 VDB C12 C18
Figure 2. MRF8P26080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P26080HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C2, C3, C4, C5, C6, C7, C8 C9, C10 C11, C12 C13, C14 C15, C16 C17, C18 R1 R2, R3 Z1 PCB Description 22 pF Chip Capacitors 3.3 F, 50 V Chip Capacitors 10 F, 50 V Chip Capacitors 4.7 F, 50 V Chip Capacitors 0.6 pF Chip Capacitors 330 F, 35 V Electrolytic Capacitors 50 , 8 W Chip Resistor 4.75 , 1/4 W Chip Resistors 2500 MHz Band 90, 3 dB Chip Hybrid Coupler 0.020, r = 3.5 Part Number ATC600F220JT250XT GRM32DR71H335KA88B GRM55DR61H106KA88L GRM31CR71H475KA12L ATC600F0R6BT250XT MCGPR35V337M10x16--RH 060120A15Z50--2 CRCW12064R75FNEA GSC356--HYB2500 RF35A2 Manufacturer ATC Murata Murata Murata ATC Multicomp Anaren Vishay Soshin Taconic
Single--ended

4 4
Quadrature combined
4
Doherty
2
2
Push--pull
Figure 3. Possible Circuit Topologies MRF8P26080HR3 MRF8P26080HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 14 W (Avg.) IDQA = 300 mA, VGSB = 1.3 Vdc Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D Gps D, DRAIN EFFICIENCY (%) --0.5 ACPR (dBc) --0.9 --1.1 --1.3 --1.5 PARC (dB) ACPR (dBc) --0.7 --10 --15 --20 --25 --30 --35 --40 D, DRAIN EFFICIENCY (%) 16 15.5 15 Gps, POWER GAIN (dB) 14.5 14 13.5 13 12.5 12 11.5 11 2570 2590 2610 2630 2650 2670 PARC 2690 2710 ACPR 45 40 35 30 25 --25 --30 --35 --40 --45 --50 2730
f, FREQUENCY (MHz)
Figure 4. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 14 Watts Avg.
--20 --30 IM3--L IM3--U VDD = 28 Vdc, Pout = 12 W (PEP), IDQA = 300 mA --40 V GSB = 1.3 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2595 MHz --50 --60 --70 IM5--U
IMD, INTERMODULATION DISTORTION (dBc)
IM5--L
IM7--L 10
IM7--U
1
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products versus Two-Tone Spacing
17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 16 Gps, POWER GAIN (dB) 15 14 13 12 11 0 --1 --2 --3 --2 dB = 20.5 W --4 --5 ACPR --6 5 15 25 35 PARC 45 --3 dB = 26.5 W Gps 70 60 50 40 30 20 10 55
VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc f = 2595 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF --1 dB = 15.5 W D
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
MRF8P26080HR3 MRF8P26080HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
18 16 Gps, POWER GAIN (dB) 14 12 10 8 6 VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 10 Pout, OUTPUT POWER (WATTS) AVG. 2570 MHz Gps 2595 MHz 2620 MHz D 50 D, DRAIN EFFICIENCY (%) 40 30 20 10 0 100 --10 --20 --30 --40 --50 --60 ACPR (dBc) 60 0
2570 MHz 2595 MHz 2620 MHz
ACPR
Figure 7. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
24 20 16 GAIN (dB) 12 8 4 0 2450 VDD = 28 Vdc Pin = 0 dBm IDQA = 300 mA VGSB = 1.3 Vdc Gain
2500
2550
2600
2650
2700
2750
2800
2850
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
MRF8P26080HR3 MRF8P26080HSR3 6 RF Device Data Freescale Semiconductor
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW
Figure 9. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal
Figure 10. Single-Carrier W-CDMA Spectrum
VDD = 28 Vdc, IDQA = 300 mA f MHz 2570 2595 2620 Max Pout (1) Watts 50 51 49 dBm 47.0 47.1 46.9 Zsource 15.3 -- j13.5 17.4 -- j12.6 18.0 -- j10.3 Zload 3.65 -- j6.25 4.26 -- j5.53 4.09 -- j5.62 f MHz 2570 2595 2620
VDD = 28 Vdc, IDQA = 300 mA Max Eff. (1) % 46.2 45.8 46.4 Zsource 15.3 -- j13.5 17.4 -- j12.6 18.0 -- j10.3 Zload 6.67 -- j2.44 6.34 -- j2.10 6.16 -- j2.49
(1) Maximum output power measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner
Z
source
Z
load
Z
source
Z
load
Figure 11. Carrier Side Load Pull Performance -- Maximum P1dB Tuning
Figure 12. Carrier Side Load Pull Performance -- Maximum Efficiency Tuning
MRF8P26080HR3 MRF8P26080HSR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 300 mA, Pulsed CW 10 sec(on), 10% Duty Cycle 52 51 50 49 48 47 46 45 44 43 42 41 24 25 26 27 28 29 30 31 32 33 34 35 f = 2620 MHz f = 2595 MHz Actual f = 2620 MHz f = 2570 MHz f = 2570 MHz f = 2595 MHz Ideal
Pout, OUTPUT POWER (dBm)
Pin, INPUT POWER (dBm) Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 2570 2595 2620 P1dB Watts 50 51 49 dBm 47.0 47.1 46.9 61.7 60.3 60.3 P3dB Watts dBm 47.9 47.8 47.8
Test Impedances per Compression Level f (MHz) 2570 2595 2620 P1dB P1dB P1dB Zsource 15.3 -- j13.5 17.4 -- j12.6 18.0 -- j10.3 Zload 3.65 -- j6.25 4.26 -- j5.53 4.09 -- j5.62
Figure 13. Pulsed CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P26080HR3 MRF8P26080HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8P26080HR3 MRF8P26080HSR3 RF Device Data Freescale Semiconductor 9
MRF8P26080HR3 MRF8P26080HSR3 10 RF Device Data Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3 RF Device Data Freescale Semiconductor 11
MRF8P26080HR3 MRF8P26080HSR3 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P26080H and MRF8P26080HS parts will be available for 2 years after release of MRF8P26080H and MRF8P26080HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P26080H and MRF8P26080HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Dec. 2010 * Initial Release of Data Sheet Description
MRF8P26080HR3 MRF8P26080HSR3 RF Device Data Freescale Semiconductor 13
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MRF8P26080HR3 MRF8P26080HSR3
Rev. 14 0, 12/2010 Document Number: MRF8P26080H
RF Device Data Freescale Semiconductor

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