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 HMC941
v00.0910
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz
Features
0.5 dB LSB Steps to 15.5 dB Single Positive Control Line Per Bit 0.5 dB Typical Bit Error High Input IP3: +45 dBm Die Size: 2.29 x 0.95 x 0.1 mm
1
ATTENUATORS - DIGITAL - CHIP
Typical Applications
The HMC941 is ideal for: * Fiber Optics & Broadband Telecom * Microwave Radio & VSAT * Military Radios, Radar & ECM * Space Applications
Functional Diagram
General Description
The HMC941 die is a broadband 5-bit GaAs IC digital attenuator MMIC chip. Covering 0.1 to 30 GHz, the insertion loss is less than 4 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at less than 0.5 dB typical step error with an IIP3 of +45 dBm. Five control voltage inputs, toggled between +5V and 0V, are used to select each attenuation state.
Electrical Specifications, TA = +25 C, With Vdd = +5V, Vss = -5V & VCTL = 0/ +5V
Parameter Insertion Loss Attenuation Range Return Loss (RF1 & RF2, All Atten. States) Attenuation Accuracy: (Referenced to Insertion Loss) 0.5 - 7.5 dB States 8 - 15.5 dB States Input Power for 0.1 dB Compression Input Third Order Intercept Point (Two-Tone Input Power= 0 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON/tOFF (50% CTL to 10/90% RF) Idd Iss 0.1 - 30.0 GHz 0.1 - 30.0 GHz 3 -4 0.1 - 30.0 GHz 0.1 - 30.0 GHz 0.1 - 0.5 GHz 0.5 - 30.0 GHz 0.1 - 0.5 GHz 0.5 - 30.0 GHz 0.1 - 30.0 GHz 60 90 5 -6 7 -8 ns ns mA mA 0.3 + 4% of Atten. Setting Max 0.3 + 5% of Atten. Setting Max 22 27 42 45 dB dB dBm dBm dBm dBm Frequency (GHz) 0.1 - 18.0 GHz 18.0 - 30.0 GHz 0.1 - 30.0 GHz 0.1 - 30.0 GHz Min. Typ. 2.5 4.0 15.5 15 Max. 3.5 4.8 Units dB dB dB dB
1-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC941
v00.0910
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz
Normalized Attenuation
0 NORMALIZED ATTENUATION (dB)
Insertion Loss vs. Temperature
0 -1 INSERTION LOSS (dB) -2 -3 -4 -5 -6 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz)
(Only Major States are Shown)
1
ATTENUATORS - DIGITAL - CHIP
1-2
-5
-10
+25 C +85 C -55 C
-15
-20 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz)
Input Return Loss
0
(Only Major States are Shown)
Output Return Loss
0
(Only Major States are Shown)
-10 RETURN LOSS (dB) RETURN LOSS (dB) 0 5 10 15 20 25 30 35 40
-10
-20
-20
-30
-30
-40
-40
-50 FREQUENCY (GHz)
-50 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz)
Bit Error vs. Attenuation State
1 0.8 0.6 BIT ERROR (dB)
Bit Error vs. Frequency
1.5 1 BIT ERROR (dB) 0.5 0 -0.5 -1 -1.5
(Only Major States are Shown)
15.5 dB
0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 0 4 8 12 16 ATTENUATION STATE (dB)
10 GHz 20 GHz 30 GHz
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC941
v00.0910
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz
Step Attenuation vs. Attenuation State
1 0.8 0.6 0.4 0.2 0 -0.2 -0.4 0 4 8 12 16 ATTENUATION STATE (dB)
10 GHz 20 GHz 30 GHz
1
ATTENUATORS - DIGITAL - CHIP
Relative Phase vs. Frequency
(Only Major States are Shown)
60 50 RELATIVE PHASE (deg) 40 30 20 10 0 -10
15.5 dB
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
Input IP3 Over Major Attenuation States
60
Input IP3 vs. Temperature
(Minimum Attenuation State)
60
STEP ATTENUATION (dB)
IP3 (dBm)
8 dB 15.5 dB
50 IP3 (dBm)
50
40
40
+25 C +85 C -40 C
30
30
20 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz)
20 0.1
1
10
100
FREQUENCY (GHz)
Input Power for 0.1 dB Compression
30 26 P0.1dB (dBm) 22 18 14 10 6 0.01
Truth Table
Control Voltage Input P4 8 dB High High High High High Low Low P3 4 dB High High High High Low High Low P2 2 dB High High High Low High High Low P1 1 dB High High Low High High High Low P0 0.5 dB High Low High High High High Low Attenuation State RF1 - RF2 Reference I.L. 0.5 dB 1 dB 2 dB 4 dB 8 dB 15.5 dB
0.1
1 FREQUENCY (GHz)
10
100
Any Combination of the above states will provide an attenuation approximately equal to the sum of the bits selected.
1-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC941
v00.0910
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz
Bias Voltages & Currents
Vdd Vss +5V @ 5 mA -5V @ 6 mA
Absolute Maximum Ratings
RF Input Power (0.5 to 30 GHz) Control Voltage (P0 to P4) Vdd Vss Channel Temperature Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +27 dBm Vdd + 0.5V +7 Vdc -7 Vdc 150 C 146 C/W -65 to + 150 C -55 to +85 C
1
ATTENUATORS - DIGITAL - CHIP
1-4
Control Voltage
State Low High Bias Condition 0 to 0.8V @ 1 A 2 to 5V @ 1 A
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. TYPICAL BOND PAD IS .004" SQUARE. 3. TYPICAL BOND PAD SPACING IS .006" CENTER TO CENTER EXCEPT AS NOTED. 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD
Die Packaging Information
Standard WP-9 (Waffle Pack)
[1]
Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC941
v00.0910
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz
1
ATTENUATORS - DIGITAL - CHIP
Pad Descriptions
Pad Number Function GND Description Die bottom must be connected to RF ground. This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. Interface Schematic
1, 9
RF1, RF2
2
Vss
Negative Bias -5V
3-7
P0 - P4
See truth table and control voltage table.
8
Vdd
Positive Bias +5V
Assembly Diagram
1-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC941
v00.0910
0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
1
ATTENUATORS - DIGITAL - CHIP
1-6
RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com


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